Field effect transistor and manufacturing method thereof
Provided are a field effect transistor and a manufacturing method thereof. With this method, an active layer in the field effect transistor is manufactured by a solution method with black phosphorus nanosheets or black phosphorus quantum dots as material. The manufacturing process is simple to reduce the production cost and enriches the preparation materials of field effect transistor for reducing environmental pollution and dependence on metal elements. Meanwhile, the use of a carbon material, such as graphene or carbon nanotube for the preparation of a source pattern layer, a drain pattern layer and a top gate pattern layer can form an effective ohmic contact with a black phosphorus active layer to reduce the contact resistance.
1. A manufacturing method of a field effect transistor, comprising steps of:
forming an active layer above a substrate by a solution comprising black phosphorus nanosheets or black phosphorus quantum dots;
forming a source pattern layer contacting with the active layer and a drain pattern layer contacting with the active layer;
wherein the step of forming the active layer above the substrate by the solution comprising the black phosphorus nanosheets or the black phosphorus quantum dots comprises:
forming a black phosphorus film layer above the substrate with the solution comprising the black phosphorus nanosheets or the black phosphorus quantum dots by spin coating;
evaporating the black phosphorus film layer in vacuum at a low temperature to form a black phosphorus active layer;
wherein the step of forming a source pattern layer contacting with the active layer and a drain pattern layer contacting with the active layer comprises:
forming a conductive material layer on a base body and transferring the conductive material layer onto the active layer by a transfer process;
patterning the conductive material layer by plasma photolithography to form the source pattern layer and the drain pattern layer.
2. The method according to claim 1 , wherein the conductive material layer is made of a conductive carbon material of graphene or carbon nanotube.
3. The method according to claim 1 , further comprising a step of:
sequentially forming a bottom gate pattern layer and a bottom gate insulating layer covering the bottom gate pattern layer on the substrate.
4. The method according to claim 3 , further comprising steps of:
forming a top gate insulating layer covering the source pattern layer, the drain pattern layer and the active layer;
forming a top gate pattern layer on the top gate insulating layer.
5. The method according to claim 1 , further comprising a step of:
forming an insulation layer above the substrate, wherein the active layer is formed on the insulation layer.