Organic light emitting display device
An organic light emitting display device secures an auxiliary electrode with a sufficient area without forming a passivation layer, an additional planarization film, an additional connection electrode and an auxiliary electrode. Accordingly, manufacturing of a top-emission organic light emitting display device may use three to four fewer masks, thus advantageously simplifying the process and reducing manufacturing costs, the thickness of the organic light emitting display device and the resistance of the second electrode.
1. An organic light emitting display device, comprising:
a light-shielding layer and a first auxiliary electrode each disposed in a display area of a substrate defined by the display area and a pad area;
a buffer layer covering the light-shielding layer and the first auxiliary electrode;
a thin film transistor disposed on the buffer layer such that the thin film transistor overlaps the light-shielding layer;
a lower pad part disposed on the buffer layer of the pad area;
an upper pad part spaced from the lower pad part via an interlayer insulation film and connected to the lower pad part through a pad contact hole;
a second auxiliary electrode connected to the first auxiliary electrode through a first contact hole;
a planarization film covering the thin film transistor and the second auxiliary electrode;
a pad protection layer covering a side surface of the upper pad part and exposing a part of an upper surface of the upper pad part;
a first electrode disposed on the planarization film and electrically connected to the thin film transistor;
a third auxiliary electrode connected to the second auxiliary electrode through a second contact hole;
an organic light emitting layer disposed on the first electrode; and
a second electrode disposed on the organic light emitting layer including an emission layer and electrically connected to the third auxiliary electrode.
2. The organic light emitting display device according to claim 1 , wherein the pad protection layer is formed using the same material as the planarization film.
3. The organic light emitting display device according to claim 1 , wherein the thin film transistor comprises:
an active layer disposed on the buffer layer and including a channel area, a source area and a drain area;
a gate insulation film disposed on the channel area of the active layer;
a gate electrode disposed on the gate insulation film;
a source electrode connected to the source area of the active layer; and
a drain electrode connected to the drain area of the active layer,
wherein the interlayer insulation film covers the gate electrode, and
the lower pad part is disposed in the same layer as the gate electrode and is formed using the same material as the gate electrode.
4. The organic light emitting display device according to claim 3 , wherein the source electrode and the drain electrode are disposed in the same layer as the upper pad part and the second auxiliary electrode, and are formed using the same material as the upper pad part and the second auxiliary electrode.
5. The organic light emitting display device according to claim 3 , wherein at least one of the source electrode, the drain electrode, the upper pad part, and the second auxiliary electrode has a stack structure including three metal layers.
6. The organic light emitting display device according to claim 5 , wherein the three metal layers are MoTi, Cu, and MoTi sequentially stacked.
7. The organic light emitting display device according to claim 1 , further comprising:
a bank insulation film disposed on the first electrode so as to expose a part of the first electrode, to define a pixel area and expose a part of the third auxiliary electrode; and
a barrier disposed on the exposed part of third auxiliary electrode and having a reversed taper shape,
wherein the third auxiliary electrode is electrically connected to the second electrode in a neighboring area of the barrier.
8. The organic light emitting display device according to claim 2 , wherein the pad protection layer and the planarization film comprise polyimide (PI).
9. The organic light emitting display device according to claim 1 , wherein at least one of the first electrode and the third auxiliary electrode has a stack structure of three metal layers including a lower layer, a middle layer, and an upper layer.
10. The organic light emitting display device according to claim 9 , wherein the three metal layers are ITO, Ag, and ITO sequentially stacked.
11. The organic light emitting display device according to claim 1 , wherein:
any one electrode of the thin film transistor is connected to the light-shielding layer through a contact hole.
12. The organic light emitting display device according to claim 1 , wherein:
the pad protection layer is formed on the same layer as the planarization film using the same material as the planarization film and separate from the planarization film,
the pad protection layer has a smaller thickness than that of the planarization film, and
the interlayer insulation film under the pad protection layer is exposed on the periphery of side surfaces of the pad protection layer in the pad area.