Controlling ion energy within a plasma chamber
Systems and methods controlling ion energy within a plasma chamber are described. One of the systems includes an upper electrode coupled to a sinusoidal RF generator for receiving a sinusoidal signal and a nonsinusoidal RF generator for generating a nonsinusoidal signal. The system further includes a power amplifier coupled to the nonsinusoidal RF generator. The power amplifier is used for amplifying the nonsinusoidal signal to generate an amplified signal. The system includes a filter coupled to the power amplifier. The filter is used for filtering the amplified signal using a filtering signal to generate a filtered signal. The system includes a chuck coupled to the filter. The chuck faces at least a portion of the upper electrode and includes a lower electrode. The lower electrode is used for receiving the filtered signal to facilitate achieving ion energy at the chuck to be between a lower threshold and an upper threshold.
1. A method comprising:
generating a sinusoidal radio frequency (RF) signal for providing to an upper electrode of a plasma chamber;
generating a nonsinusoidal RF signal;
amplifying the nonsinusoidal RF signal to generate an amplified nonsinusoidal RF signal;
filtering the amplified nonsinusoidal RF signal to generate a filtered nonsinusoidal RF signal having a first series of pulses and a second series of pulses, wherein the second series of pulses has a different amplification level than an amplification level of the first series of pulses; and
providing the filtered nonsinusoidal RF signal to a lower electrode of the plasma chamber.
2. The method of claim 1 , wherein said generating the nonsinusoidal RF signal comprises:
generating a second sinusoidal RF signal;
filtering the second sinusoidal RF signal to output the nonsinusoidal RF signal.
3. The method of claim 1 , wherein amplifying the nonsinusoidal RF signal comprises increasing a magnitude of the nonsinusoidal RF signal.
4. The method of claim 1 , wherein the second series of pulses is consecutive to the first series of pulses, wherein the filtered nonsinusoidal RF signal has a third series of pulses and a fourth series of pulses, wherein the third series of pulses is another occurrence of the first series of pulses and the fourth series of pulses is another occurrence of the second series of pulses, wherein the third series of pulses is consecutive to the second series of pulses, and the fourth series of pulses is consecutive to the third series of pulses.
5. The method of claim 1 , wherein providing the filtered nonsinusoidal RF signal to the lower electrode is performed to adjust ion energy within the plasma chamber to be between a lower threshold and an upper threshold, wherein the upper threshold is greater than the lower threshold.
6. The method of claim 1 , wherein the upper electrode is a surface inductor or a capacitive plate, and the lower electrode is an electrostatic chuck.
7. The method of claim 1 , wherein the amplification level of the second series of pulses is lower than the amplification level of the first series of pulses, wherein the amplification level of the first series of pulses is a peak-to-peak magnitude of the first series of pulses, wherein the amplification level of the second series of pulses is a peak-to-peak magnitude of the second series of pulses.
8. A method comprising:
generating a sinusoidal radio frequency (RF) signal for providing to a lower electrode of a plasma chamber;
generating a nonsinusoidal RF signal;
amplifying the nonsinusoidal RF signal to generate an amplified nonsinusoidal RF signal;
filtering the amplified nonsinusoidal RF signal to generate a filtered nonsinusoidal RF signal having a first series of pulses and a second series of pulses, wherein the second series of pulses has a different amplification level than an amplification level of the first series of pulses; and
providing the filtered nonsinusoidal RF signal to an upper electrode of the plasma chamber.
9. The method of claim 8 , wherein said generating the nonsinusoidal RF signal comprises:
generating a second sinusoidal RF signal;
filtering the second sinusoidal RF signal to output the nonsinusoidal RF signal.
10. The method of claim 8 , wherein amplifying the nonsinusoidal RF signal comprises increasing a magnitude of the nonsinusoidal RF signal.
11. The method of claim 8 , wherein the second series of pulses is consecutive to the first series of pulses, wherein the filtered nonsinusoidal RF signal has a third series of pulses and a fourth series of pulses, wherein the third series of pulses is another occurrence of the first series of pulses and the fourth series of pulses is another occurrence of the second series of pulses, wherein the third series of pulses is consecutive to the second series of pulses, and the fourth series of pulses is consecutive to the third series of pulses.
12. The method of claim 8 , wherein providing the filtered nonsinusoidal RF signal to the upper electrode is performed to adjust ion energy within the plasma chamber to be between a lower threshold and an upper threshold, wherein the upper threshold is greater than the lower threshold.
13. The method of claim 8 , wherein the upper electrode is a surface inductor or a capacitive plate, and the lower electrode is an electrostatic chuck.
14. The method of claim 8 , wherein the amplification level of the second series of pulses is lower than the amplification level of the first series of pulses, wherein the amplification level of the first series of pulses is a peak-to-peak magnitude of the first series of pulses, wherein the amplification level of the second series of pulses is a peak-to-peak magnitude of the second series of pulses.
15. A method comprising:
generating a first nonsinusoidal RF signal;
amplifying the first nonsinusoidal RF signal to generate a first amplified nonsinusoidal RF signal;
filtering the first amplified nonsinusoidal RF signal to generate a first filtered nonsinusoidal RF signal having a first series of pulses and a second series of pulses, wherein the second series of pulses has a different amplification level than an amplification level of the first series of pulses;
providing the first filtered nonsinusoidal RF signal to a lower electrode of the plasma chamber;
generating a second nonsinusoidal RF signal;
amplifying the second nonsinusoidal RF signal to generate a second amplified nonsinusoidal RF signal;
filtering the second amplified nonsinusoidal RF signal to generate a second filtered nonsinusoidal RF signal having a third series of pulses and a fourth series of pulses, wherein the fourth series of pulses has a different amplification level than an amplification level of the third series of pulses; and
providing the second filtered nonsinusoidal RF signal to an upper electrode of the plasma chamber.
16. The method of claim 15 ,
wherein said generating the first nonsinusoidal RF signal comprises:
generating a first sinusoidal RF signal;
filtering the first sinusoidal RF signal to output the first nonsinusoidal RF signal, and
wherein said generating the second nonsinusoidal RF signal comprises:
generating a second sinusoidal RF signal;
filtering the second sinusoidal RF signal to output the second nonsinusoidal RF signal.
17. The method of claim 15 , wherein amplifying the first nonsinusoidal RF signal comprises increasing a magnitude of the first nonsinusoidal RF signal, and amplifying the second nonsinusoidal RF signal comprises increasing a magnitude of the second nonsinusoidal RF signal.
18. The method of claim 15 ,
wherein the second series of pulses is consecutive to the first series of pulses, wherein the first filtered nonsinusoidal RF signal has a fifth series of pulses and a sixth series of pulses, wherein the fifth series of pulses is another occurrence of the first series of pulses and the sixth series of pulses is another occurrence of the second series of pulses, wherein the fifth series of pulses is consecutive to the second series of pulses, and the sixth series of pulses is consecutive to the fifth series of pulses,
wherein the fourth series of pulses is consecutive to the third series of pulses, wherein the second filtered nonsinusoidal RF signal has a seventh series of pulses and an eighth series of pulses, wherein the seventh series of pulses is another occurrence of the third series of pulses and the eighth series of pulses is another occurrence of the fourth series of pulses, wherein the seventh series of pulses is consecutive to the fourth series of pulses, and the eighth series of pulses is consecutive to the seventh series of pulses.
19. The method of claim 15 , wherein providing the first filtered nonsinusoidal RF signal to the lower electrode and providing the second filtered nonsinusoidal RF signal to the upper electrode are performed to adjust ion energy within the plasma chamber to be between a lower threshold and an upper threshold, wherein the upper threshold is greater than the lower threshold.
20. The method of claim 15 , wherein the upper electrode is a surface inductor or a capacitive plate, and the lower electrode is an electrostatic chuck.
21. The method of claim 15 ,
wherein the amplification level of the second series of pulses is lower than the amplification level of the first series of pulses, wherein the amplification level of the first series of pulses is a peak-to-peak magnitude of the first series of pulses, wherein the amplification level of the second series of pulses is a peak-to-peak magnitude of the second series of pulses,
wherein the amplification level of the fourth series of pulses is lower than the amplification level of the third series of pulses, wherein the amplification level of the third series of pulses is a peak-to-peak magnitude of the third series of pulses, wherein the amplification level of the fourth series of pulses is a peak-to-peak magnitude of the fourth series of pulses.