IP Library Granted Patent US 10,427,111
Granted Patent B2
US 10,427,111 · App. 15/458,407 · Granted Oct 1, 2019

Gas separation membrane, method of producing gas separation membrane, gas separation membrane module, and gas separator

Inventors: Yusuke Mochizuki (Ashigarakami-gun, JP); Makoto Sawada (Ashigarakami-gun, JP); Takeshi Narita (Ashigarakami-gun, JP); Shigehide Itou (Ashigarakami-gun, JP); Hiroyuki Noda (Ashigarakami-gun, JP); Atsushi Mukai (Ashigarakami-gun, JP)
Assignee: FUJIFILM Corporation
B01D71/70B01D53/228B01D69/02B01D69/125B01D71/64B01D2256/10B01D2256/16B01D2256/24B01D2256/245B01D2257/302B01D2257/304B01D2257/308B01D2257/404B01D2257/504B01D2323/12
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Quick Facts
Patent No.
US 10,427,111
App. No.
15/458,407
Granted
Oct 1, 2019
Kind
B2
Abstract

Provided are a gas separation membrane which has a resin layer containing a compound having a siloxane bond, in which the resin layer containing a compound having a siloxane bond satisfies Expressions 1 and 2, and at least one of gas permeability or gas separation selectivity is high under high pressure; a method of producing a gas separation membrane; a gas separation membrane module; and a gas separator. 0.9≥ A/B ≥0.55  Expression 1 B ≥1.7  Expression 2 In the expressions, A represents an O/Si ratio that is a ratio of the number of oxygen atoms relative to the number of silicon atoms contained in the resin layer containing a compound having a siloxane bond at a depth of 10 nm from the surface of the resin layer containing a compound having a siloxane bond, and B represents an O/Si ratio that is a ratio of the number of oxygen atoms relative to the number of silicon atoms in the surface of the resin layer containing a compound having a siloxane bond.

Claims (19)

1. A gas separation membrane which satisfies any one of the following Conditions 1, 3, and 4,

Condition 1: a gas separation membrane which has a resin layer containing a compound having a siloxane bond, in which the resin layer containing a compound having a siloxane bond satisfies the following Expressions 1 and 2,

0.9≥ A/B≥ 0.55, and  Expression 1

B≥ 1.7  Expression 2

in Expressions 1 and 2, A represents an O/Si ratio that is a ratio of the number of oxygen atoms relative to the number of silicon atoms contained in the resin layer containing a compound having a siloxane bond at a depth of 10 nm from the surface of the resin layer containing a compound having a siloxane bond, and B represents an O/Si ratio that is a ratio of the number of oxygen atoms relative to the number of silicon atoms in the surface of the resin layer containing a compound having a siloxane bond,

Condition 3: a gas separation membrane which has a resin layer containing a compound having a siloxane bond, in which a minimum value Si 0 of the proportion of peaks of Si 2+ and Si 3+ to peaks of all Si in ESCA depth analysis of the resin layer containing a compound having a siloxane bond is in a range of 1% to 40%, and

Condition 4: a gas separation membrane which has a resin layer containing a compound having a siloxane bond, in which positron lifetime τ3 of a third component in a case where the positron is implanted at a strength of 1 keV from the surface of the resin layer containing a compound having a siloxane bond is in a range of 3.40 to 4.20 ns,

and which further comprises a porous support A and satisfies the following Condition 2,

Condition 2: a gas separation membrane which includes a porous support A; and a resin layer containing a compound having a siloxane bond positioned on the porous support A,

wherein the compound having a siloxane bond includes at least a repeating unit represented by the following Formula (2) or a repeating unit represented by the following Formula (3),

the resin layer containing a compound having a siloxane bond includes a region GLi present in the porous support B and a region GLe present on the porous support B,

the thickness of GLe is in a range of 50 to 1,000 nm,

the thickness of GLi is 20 nm or greater and the thickness of GLe is in a range of 10% to 350%, and

a difference between the content of the repeating unit represented by Formula (3) described above in 20 nm of the GLe surface layer and the content of the repeating unit represented by Formula (3) described above in 20 nm of the GLi surface layer is in a range of 30% to 90%,

in Formulae (2) and (3) described above, R 11 represents a substituent, the symbol “*” represents a binding site with respect to # in Formula (2) or (3) described above, and the symbol “#” represents a binding site with respect to * in Formula (2) or (3) described above.

2. The gas separation membrane according to claim 1 ,

wherein the thickness of GLe is in a range of 200 to 900 nm.

3. The gas separation membrane according to claim 1 ,

wherein the thickness of GLi is 20% to 90% of the thickness of GLe.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2026
From: YESTAR ADVANCED MATERIALS (HK) CO., LIMITED
To: YESTAR ADVANCED MATERIALS (SUZHOU) CO., LTD.
Reel/Frame 076045/0973 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2026
From: FUJIFILM CORPORATION
To: YESTAR ADVANCED MATERIALS (HK) CO., LIMITED
Reel/Frame 075440/0386 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 14, 2017
From: MOCHIZUKI, YUSUKE; SAWADA, MAKOTO; NARITA, TAKESHI; ITOU, SHIGEHIDE; NODA, HIROYUKI; MUKAI, ATSUSHI
To: FUJIFILM CORPORATION
Reel/Frame 041571/0843 →
Priority Claims (6)
JP 2014-201930 · Sep 30, 2014 · national
JP 2015-038734 · Feb 27, 2015 · national
JP 2015-146305 · Jul 24, 2015 · national
JP 2015-146306 · Jul 24, 2015 · national
JP 2015-146307 · Jul 24, 2015 · national
JP 2015-146308 · Jul 24, 2015 · national
Continuity (2)
Continuation PCTJP2015075187 · Sep 4, 2015
Related Publication 20170182469A1 · Jun 29, 2017