Gas plenum arrangement for improving etch non-uniformity in transformer-coupled plasma systems
A gas plenum arrangement for a substrate processing system includes a gas plenum body arranged to define a gas plenum between a coil and a processing chamber. The coil is arranged outside of an outer edge of the gas plenum body. A plurality of flux attenuating portions is arranged outside of the outer edge of the gas plenum body. The flux attenuation portions overlap the coil.
1. A gas plenum arrangement for a substrate processing system, the gas plenum arrangement comprising:
a gas plenum body having an inner opening and an outer edge, wherein
the gas plenum body is arranged to define a gas plenum between a coil and a processing chamber, and
the coil is arranged around and outside of the outer edge of the gas plenum body; and
a plurality of discrete flux attenuating portions, wherein
the plurality of discrete flux attenuating portions is arranged outside of the outer edge of the gas plenum body and extends radially outward from the outer edge of the gas plenum body, and
the plurality of discrete flux attenuating portions (i) overlaps, in a vertical direction, some angular portions of the coil outside of the outer edge of the gas plenum body and (ii) does not overlap, in the vertical direction, other angular portions of the coil outside of the outer edge of the gas plenum body.
2. The gas plenum arrangement of claim 1 , wherein the flux attenuating portions are attached to the gas plenum body.
3. The gas plenum arrangement of claim 1 , further comprising a ring portion arranged around the coil, wherein the flux attenuating portions are attached to the ring portion and extend radially inward from the ring portion toward the gas plenum body.
4. The gas plenum arrangement of claim 1 , wherein the gas plenum body is annular.
5. The gas plenum arrangement of claim 1 , wherein the flux attenuating portions are evenly spaced around the gas plenum body.
6. The gas plenum arrangement of claim 1 , wherein the flux attenuating portions comprise at least one of polytetrafluoroethylene, glass-filled polytetrafluoroethylene, polyphenylsulfone, and polyetheretherketone.
7. The gas plenum arrangement of claim 1 , wherein the flux attenuating portions are spaced at 90 degree intervals around the gas plenum body.
8. A substrate processing system, comprising:
the gas plenum arrangement of claim 1 ; and
a dielectric window, wherein the gas plenum body is arranged between the coil and the dielectric window, and wherein the dielectric window is arranged between the gas plenum body and the processing chamber.
9. The substrate processing system of claim 8 , wherein the flux attenuating portions are arranged between the coil and the dielectric window.
10. The substrate processing system of claim 8 , further comprising:
a gas supply system configured to supply gas to the processing chamber;
a radio frequency (RF) source configured to supply RF signals to the coil to create RF plasma in the processing chamber; and
a transformer-coupled capacitive tuning circuit including at least one capacitor, wherein the transformer-coupled capacitive tuning circuit is connected between the RF source and the coil.