IP Library › Granted Patent US 10,431,632
Granted Patent B2
US 10,431,632 · App. 15/837,334 · Granted Oct 1, 2019

Light-emitting device, electronic appliance, and lighting device

Inventor: Kaoru Hatano (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/3211H01L51/504H01L51/5218H01L51/5234H01L51/5265H01L2251/558
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Quick Facts
Patent No.
US 10,431,632
App. No.
15/837,334
Granted
Oct 1, 2019
Kind
B2
Abstract

A light-emitting device and a lighting device each of which includes a plurality of light-emitting elements exhibiting light with different wavelengths are provided. The light-emitting device and the lighting device each have an element structure in which each of the light-emitting elements emits only light with a desired wavelength, and thus the light-emitting elements have favorable color purity. In the light-emitting element emitting light (λ R ) with the longest wavelength of the light with different wavelengths, the optical path length from a reflective electrode to a light-emitting layer (a light-emitting region) included in an EL layer is set to λ R /4 and the optical path length from the reflective electrode to a semi-transmissive and semi-reflective electrode is set to λ R /2.

Claims (77)

1. A light-emitting device comprising:

a first light-emitting element including a first electrode, a first transparent conductive layer in contact with the first electrode, an EL layer in contact with the first transparent conductive layer, and a second electrode in contact with the EL layer;

a second light-emitting element including a third electrode, a second transparent conductive layer in contact with the third electrode, the EL layer in contact with the second transparent conductive layer, and the second electrode in contact with the EL layer; and

a third light-emitting element including a fourth electrode, the EL layer in contact with the fourth electrode, and the second electrode in contact with the EL layer,

wherein the EL layer includes a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer,

wherein the light with the wavelength λ1 is emitted from the first light-emitting element,

wherein the light with the wavelength λ2 is emitted from the second light-emitting element,

wherein the light with the wavelength λ3 is emitted from the third light-emitting element,

wherein a wavelength relation of λ3>λ1>λ2 is satisfied,

wherein an optical path length from the first electrode to the second light-emitting layer is 3λ1/4, and an optical path length from the first electrode to the second electrode is λ1 in the first light-emitting element,

wherein an optical path length from the third electrode to the third light-emitting layer is 3λ2/4, and an optical path length from the third electrode to the second electrode is λ2 in the second light-emitting element, and

wherein an optical path length from the fourth electrode to the first light-emitting layer is λ3/4, and an optical path length from the fourth electrode to the second electrode is λ3/2 in the third light-emitting element.

2. The light-emitting device according to claim 1 ,

wherein each of the first electrode, the third electrode, and the fourth electrode is a reflective electrode, and

wherein the second electrode is a semi-transmissive and semi-reflective electrode.

3. The light-emitting device according to claim 1 ,

wherein the EL layer includes one or more of a hole-injection layer, a hole-transport layer, an electron-transport layer, and an electron-injection layer.

4. The light-emitting device according to claim 1 ,

wherein the first transparent conductive layer is thicker than the second transparent conductive layer.

5. The light-emitting device according to claim 1 ,

wherein the first electrode, the third electrode, and the fourth electrode are formed using a same material.

6. The light-emitting device according to claim 1 ,

wherein the wavelength λ1 is in a range from 500 nm to 550 nm,

wherein the wavelength λ2 is in a range from 420 nm to 480 nm, and

wherein the wavelength λ3 is in a range from 600 nm to 760 nm.

7. An electronic appliance comprising the light-emitting device according to claim 1 .

8. A lighting device comprising the light-emitting device according to claim 1 .

9. A light-emitting device comprising:

a first light-emitting element including a first electrode, a first transparent conductive layer in contact with the first electrode, an EL layer in contact with the first transparent conductive layer, and a second electrode in contact with the EL layer; and

a second light-emitting element including a third electrode, the EL layer in contact with the third electrode, and the second electrode in contact with the EL layer,

wherein the EL layer includes a first light-emitting layer emitting the light with the wavelength λ3,

wherein the light with the wavelength λ1 is emitted from the first light-emitting element,

wherein the light with the wavelength λ2 is emitted from the second light-emitting element,

wherein a wavelength relation of λ3>λ1>λ2 is satisfied,

wherein an optical path length from the first electrode to the first light-emitting layer is 3λ1/4, and an optical path length from the first electrode to the second electrode is λ1 in the first light-emitting element, and

wherein an optical path length from the third electrode to the first light-emitting layer is λ2/4, and an optical path length from the third electrode to the second electrode is λ2/2 in the second light-emitting element.

10. The light-emitting device according to claim 9 ,

wherein each of the first electrode and the third electrode is a reflective electrode, and

wherein the second electrode is a semi-transmissive and semi-reflective electrode.

11. The light-emitting device according to claim 9 ,

wherein the EL layer includes one or more of a hole-injection layer, a hole-transport layer, an electron-transport layer, and an electron-injection layer.

12. The light-emitting device according to claim 9 ,

wherein the first electrode and the third electrode are formed using a same material.

13. The light-emitting device according to claim 9 ,

wherein the wavelength λ1 is in a range from 500 nm to 550 nm,

wherein the wavelength λ2 is in a range from 420 nm to 480 nm, and

wherein the wavelength λ3 is in a range from 600 nm to 760 nm.

14. An electronic appliance comprising the light-emitting device according to claim 9 .

15. A lighting device comprising the light-emitting device according to claim 9 .

16. A light-emitting device comprising:

a first light-emitting element including a first electrode, a first transparent conductive layer in contact with the first electrode, an EL layer in contact with the first transparent conductive layer, and a second electrode in contact with the EL layer;

a second light-emitting element including a third electrode, a second transparent conductive layer in contact with the third electrode, the EL layer in contact with the second transparent conductive layer, and the second electrode in contact with the EL layer; and

a third light-emitting element including a fourth electrode, the EL layer in contact with the fourth electrode, and the second electrode in contact with the EL layer,

wherein the EL layer includes a first light-emitting layer emitting the light with the wavelength λ4 and a second light-emitting layer emitting the light with the wavelength λ2,

wherein the light with the wavelength λ1 is emitted from the first light-emitting element,

wherein the light with the wavelength λ2 is emitted from the second light-emitting element,

wherein the light with the wavelength λ3 is emitted from the third light-emitting element,

wherein a wavelength relation of λ3>λ4>λ1>λ2 is satisfied,

wherein an optical path length from the first electrode to the first light-emitting layer is 3λ1/4, and an optical path length from the first electrode to the second electrode is λ1 in the first light-emitting element,

wherein an optical path length from the third electrode to the second light-emitting layer is 3λ2/4, and an optical path length from the third electrode to the second electrode is λ2 in the second light-emitting element, and

wherein an optical path length from the fourth electrode to the first light-emitting layer is λ3/4, and an optical path length from the fourth electrode to the second electrode is λ3/2 in the third light-emitting element.

17. The light-emitting device according to claim 16 ,

wherein each of the first electrode, the third electrode, and the fourth electrode is a reflective electrode, and

wherein the second electrode is a semi-transmissive and semi-reflective electrode.

18. The light-emitting device according to claim 16 ,

wherein the EL layer includes one or more of a hole-injection layer, a hole-transport layer, an electron-transport layer, and an electron-injection layer.

19. The light-emitting device according to claim 16 ,

wherein the first transparent conductive layer is thicker than the second transparent conductive layer.

20. The light-emitting device according to claim 16 ,

wherein the first electrode, the third electrode, and the fourth electrode are formed using a same material.

21. The light-emitting device according to claim 16 ,

wherein the wavelength λ1 is in a range from 500 nm to 550 nm,

wherein the wavelength λ2 is in a range from 420 nm to 480 nm,

wherein the wavelength λ3 is in a range from 600 nm to 760 nm, and

wherein the wavelength λ4 is in a range from 550 nm to 570 nm.

22. An electronic appliance comprising the light-emitting device according to claim 16 .

23. A lighting device comprising the light-emitting device according to claim 16 .

Priority Claims (1)
JP 2011-085922 · Apr 8, 2011 · national
Continuity (3)
Continuation 15061062 · Mar 4, 2016
Division 13439329 · Apr 4, 2012
Related Publication 20180108713A1 · Apr 19, 2018
Cited By (1)
US 12,219,873