Semiconductor device including gate having dents and spacer protrusions extending therein
A semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate; a gate insulating film covering a top surface and both side walls of the fin-shaped active region; a gate electrode on the top surface and the both side walls of the fin-shaped active region and covering the gate insulating film; one pair of insulating spacers on both side walls of the gate electrode; and a source region and a drain region on the substrate and respectively located on sides of the gate electrode. The source region and the drain region form a source/drain pair. The one pair of insulating spacers include protrusions that protrude from upper portions of the one pair of insulating spacers toward the gate electrode.
1. A semiconductor device comprising:
a substrate including a fin-shaped active region that protrudes from the substrate, the fin-shaped active region including a first side wall opposite a second side wall;
a gate insulating film covering a top surface, the first side wall, and the second side wall of the fin-shaped active region;
a gate electrode on the top surface, the first side wall, and the second side wall of the fin-shaped active region, the gate electrode covering the gate insulating film, the gate electrode including a first sidewall opposite a second sidewall;
one pair of insulating spacers on the first sidewall and the second sidewall of the gate electrode, upper portions of the one pair of insulating spacers including protrusions that protrude from the upper portions of the one pair of insulating spacers toward the gate electrode; and
a source region and a drain region on the substrate and respectively located adjacent to the first sidewall and the second sidewall of the gate electrode such that the gate electrode extends between the source region and the drain region, the source region and the drain region forming a source/drain pair, wherein
the upper portions of the one pair of insulating spacers are defined from regions that extend from uppermost surfaces to heights greater than middle heights, respectively, for the one pair of insulating spacers.
2. The semiconductor device of claim 1 , wherein the protrusions of the one pair of insulating spacers face each other.
3. The semiconductor device of claim 1 , wherein the protrusions are lower than uppermost ends of the one pair of insulating spacers.
4. The semiconductor device of claim 3 , wherein
the one pair of insulating spacers are spaced apart from each other by a first width between lower ends of the one pair of insulating spacers, by a second width between the protrusions of the one pair of insulating spacers, and by a third width between the uppermost ends of the one pair of insulating spacers,
the second width is less than the first width, and
the third width is less than the first width and greater than the second width.
5. The semiconductor device of claim 1 , wherein the protrusions are on uppermost ends of the one pair of insulating spacers.
6. The semiconductor device of claim 5 , wherein
the one pair of insulating spacers are spaced apart from each other by a first width between lower ends of the one pair of insulating spacers and by a second width between the uppermost ends of the one pair of insulating spacers, and
the second width is less than the first width.
7. The semiconductor device of claim 1 , wherein a width of each of the one pair of insulating spacers at each of the protrusions is greater than a width of the each of the one pair of insulating spacers at a portion lower than the protrusions.
8. The semiconductor device of claim 7 , wherein a width of each of the one pair of insulating spacers at a portion higher than each of the protrusions is less than a width of each of the one pair of insulating spacers at the protrusions.
9. The semiconductor device of claim 1 , wherein
the gate electrode includes dents corresponding to the protrusions of the one pair of insulating spacers, and
the dents are located in the first sidewall and the second sidewall of the gate electrode.
10. The semiconductor device of claim 1 , wherein a minimum width of the gate electrode and the protrusions are at a same height in the semiconductor device.
11. A semiconductor device comprising:
a substrate including a trench that defines a fin-shaped active, region extending in a first direction, the fm-shaped active region including a first side wall opposite a second side wall;
a source region and a drain region spaced apart from each other on the fm-shaped active region; and
a gate structure on a portion of the fin-shaped active region between the source region and the drain region,
the gate structure extending in a second direction that crosses the first direction,
the gate structure including a gate electrode on a gate insulating film,
the gate electrode including a first sidewall opposite a second sidewall,
an upper region of the gate electrode including dents formed in the first sidewall and the second sidewall of the gate electrode, respectively,
the gate insulating film covering a top surface, the first side wall, and the second side wall of the fin-shaped active region,
the gate insulating film including a curved part that curves into the dents of the gate electrode, wherein
the upper region of the gate electrode is defined from a portion of the gate electrode that extends from an uppermost surface of the gate electrode to a height greater than a middle height of the gate electrode.
12. The semiconductor device of claim 11 , further comprising:
a pair of insulating spacers on the portion of the fin-shaped active region between the source region and the drain region, wherein
the portion of the fm-shaped active region extends between the source region and the drain region,
the pair of insulating spacers covering the first sidewall and the second sidewall of the gate electrode, and
the pair of insulating spacers include protrusions that protrude from upper portions of the pair of insulating spacers towards the dents in the gate electrode.
13. The semiconductor device of claim 12 , wherein
the dents are below a top surface of the gate electrode,
the pair of insulating spacers are spaced apart from each other by a first width between lower ends of the pair of insulating spacers, by a second width between the protrusions of the pair of insulating spacers, and by a third width between the uppermost ends of the pair of insulating spacers,
the second width is less than the first width, and
the third width is less than the first width and greater than the second width.
14. The semiconductor device of claim 12 , wherein a width of each of the pair of insulating spacers at the protrusions is greater than a width of the each of the pair of insulating spacers at a portion lower than the protrusions.
15. The semiconductor device of claim 11 , wherein the gate structure includes an interface film and a high-k dielectric film.
16. The semiconductor device of claim 11 , wherein a width of the gate electrode at the dents is less than an average width of the gate electrode in a lower region of the gate electrode.