Light emitting element, light emitting element array, and light transmission device
A light emitting element includes: a semiconductor stack structure that includes a light emitting part, and a light receiving part that receives light propagating in a lateral direction through a semiconductor layer from the light emitting part, wherein the light emitting part and the light receiving part share a quantum layer; and a light reflection layer that covers ⅓ or more of a lateral surface of the quantum layer in the light receiving part.
1. A light emitting element comprising:
a semiconductor stack structure including:
a light emitting part; and
a light receiving part configured to receive light propagating in a lateral direction through a semiconductor layer from the light emitting part,
wherein the light receiving part is configured to convert a received light into a detected monitor current, and
wherein the light emitting part and the light receiving part share a quantum layer; and
a light reflection layer that covers ⅓ or more of a lateral surface of the quantum layer in the light receiving part.
2. The light emitting element according to claim 1 , wherein the light reflection layer is a metal layer.
3. The light emitting element according to claim 2 , wherein the metal layer is an electrode wiring.
4. The light emitting element according to claim 1 , wherein the light reflection layer covers ¾ or more of the lateral surface of the quantum layer.
5. The light emitting element according to claim 1 , wherein the light reflection layer further covers a light receiving surface of the light receiving part.
6. A light transmission device comprising:
the light emitting element according to claim 1 ; and
an applying unit configured to apply a driving signal to the light emitting element.
7. A light emitting element array comprising:
a plurality of the light emitting elements according to claim 1 .
8. The light emitting element according to claim 1 , wherein the light receiving part comprises a monitor photodiode.
9. The light emitting element according to claim 1 , wherein the light emitting element is configured to compare the detected monitor current with a reference value to perform feedback control on the light emitting part.
10. The light emitting element according to claim 1 , wherein the light reflection layer directly covers ⅓ or more of the lateral surface of the quantum layer in the light receiving part.
11. The light emitting element according to claim 1 , wherein the light reflection layer directly covers ⅓ or more of the lateral surface of the quantum layer in the light receiving part.
12. The light emitting element according to claim 1 , wherein the light reflection layer contacts ⅓ or more of the lateral surface of the quantum layer in the light receiving part.
13. The light emitting element according to claim 1 , wherein the light reflection layer is configured to adjust reflectivity on the ⅓ or more of the lateral surface of the quantum layer in the light receiving part.
14. The light emitting element according to claim 1 , wherein the light reflection layer overlaps with the ⅓ or more of the lateral surface of the quantum layer in the light receiving part when viewed from the lateral direction.
15. A light emitting element comprising:
a semiconductor stack structure including:
a light emitting part; and
a light receiving part configured to receive light propagating in a lateral direction through a semiconductor layer from the light emitting part, wherein the light receiving part is configured to convert a received light into a detected monitor current, wherein the light emitting part and the light receiving part share a quantum layer;
a first electrode wiring that is formed on a lateral surface of the light emitting part; and
a second electrode wiring that is formed on a lateral surface of the light receiving part and that has a wider width than the first electrode wiring.
16. A light emitting element comprising:
a semiconductor stack structure including:
a light emitting part, and
a light receiving part configured to receive light propagating in a lateral direction through a semiconductor layer from the light emitting part, wherein the light receiving part is configured to convert a received light into a detected monitor current, wherein the light emitting part and the light receiving part share a quantum layer; and
a light blocking layer configured to block light by absorbing the light from outside, that is provided on at least a part of a lateral surface of the quantum layer in the light receiving part, and that has a thickness of 1 μm or more.
17. The light emitting element according to claim 16 , wherein the light blocking layer covers ¾ or more of the lateral surface of the quantum layer.
18. The light emitting element according to claim 16 , wherein the light blocking layer further covers a light receiving surface of the light receiving part.