IP Library › Granted Patent US 10,433,413
Granted Patent B2
US 10,433,413 · App. 14/460,365 · Granted Oct 1, 2019

Manufacturing method of circuit structure embedded with heat-dissipation block

Inventors: Cheng-Po Yu (Taoyuan County, TW); Ming-Chia Li (Taoyuan County, TW)
Assignee: Unimicron Technology Corp.
H05K1/0204H05K1/021H05K1/183H05K3/4602H05K2201/066H05K2201/09845H05K2201/10416
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Quick Facts
Patent No.
US 10,433,413
App. No.
14/460,365
Granted
Oct 1, 2019
Kind
B2
Abstract

A manufacturing method of circuit structure embedded with heat-dissipation block including the following steps is provided. A core board including a first dielectric layer and two first conductive layers located on two opposite sides of the first dielectric layer is provided. A through hole penetrated the core board is formed. A heat-dissipation block is disposed into the through hole. Two inner-layer circuits are formed on two opposite sides of the core board. At least one build-up structure is bonded on the core board, wherein the build-up structure includes a second dielectric layer and a second conductive layer, and the second dielectric layer is located between the second conductive layer and the core board. A cavity is formed on a predetermined region of the build-up structure, and the cavity is communicated with the corresponding inner-layer circuit. Another manufacturing method of circuit structure embedded with heat-dissipation block is also provided.

Claims (11)

1. A manufacturing method of circuit structure embedded with heat-dissipation block, comprising:

providing a core board, wherein the core board comprises a first dielectric layer and two first conductive layers, and the two first conductive layers are located on two opposite sides of the first dielectric layer, respectively;

forming two inner-layer circuits on two opposite sides of the core board;

bonding two build-up structures on two opposite sides of the core board, wherein each of the build-up structures comprises a second dielectric layer and a second conductive layer, and the second dielectric layer is located between the second conductive layer and the core board;

forming a cavity on a predetermined region of each of the two build-up structures, wherein the cavity is communicated with the corresponding inner-layer circuit;

forming a through hole penetrated the core board after forming the cavity and bonding the build-up structures, wherein a dimension of the cavity is greater than a dimension of the through hole, and the through hole is communicated with the cavity, and wherein the cavities of the two build-up structures have an overlapping area, the through hole is formed at the overlapping area and communicated with the cavities; and

disposing a heat-dissipation block into the through hole, wherein the through hole is corresponding to the heat-dissipation block, an upper surface and a lower surface of the heat-dissipation block are aligned with two opening ends of the through hole, respectively.

2. The manufacturing method of circuit structure embedded with heat-dissipation block of claim 1 , further comprising:

before the step of bonding the build-up structure on the core board, disposing a release film on the core board, wherein the release film is corresponding to the predetermined region of the build-up structure; and in the step of forming the cavity on the predetermined region of the build-up structure, removing the predetermined region of the build-up structure and the release film, so as to form the cavity on the build-up structure.

3. The manufacturing method of circuit structure embedded with heat-dissipation block of claim 1 , further comprising:

disposing a chip into the cavity, wherein the chip is electrically connected to the corresponding inner-layer circuit; or disposing a heat sink into the cavity, wherein the heat sink is connected to the heat-dissipation block.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2014
From: YU, CHENG-PO; LI, MING-CHIA
To: UNIMICRON TECHNOLOGY CORP.
Reel/Frame 033586/0688 →
Continuity (1)
Related Publication 20160050771A1 · Feb 18, 2016
Cited By (1)
US 12,495,505