Magnetic tunnel junction memory device

1. A method comprising:

in a first operating mode, generating a first write current to flow through an electrode of a memory device in a first direction to establish a first magnetic orientation in a magnetic layer of the memory device;

in a second operating mode, generating a second write current to flow through the electrode in a second direction to establish a second magnetic orientation in the magnetic layer, wherein the second direction is different than the first direction and the second magnetic orientation is different than the first magnetic orientation; and

wherein the first write current and the second write current each produce a magnetic field in the electrode that assists in respectively aligning the first magnetic orientation and the second magnetic orientation.

2. The method of claim 1 , further comprising storing a first data value in the first operating mode and storing a second data value in the second operating mode.

3. The method of claim 2 , wherein the first data value is a “0” binary value and the second data value is a “1” binary value.

4. The method of claim 1 , further comprising reading a data value stored by the memory device.

5. The method of claim 4 , wherein the electrode is a first electrode, and the reading the data value includes measuring a resistance when an electric potential is applied between the first electrode and a second electrode of the memory device.

6. The method of claim 1 , wherein:

the memory device is a magnetic tunnel junction device that includes a free layer and a pinned layer, the magnetic layer being the free layer;

the first magnetic orientation is substantially parallel to and in substantially the same direction as a magnetic orientation in the pinned layer; and

the second magnetic orientation is substantially parallel to and in substantially the opposite direction as the magnetic orientation in the pinned layer.

7. The method of claim 1 , wherein the first magnetic orientation and the second magnetic orientation are substantially parallel to a longitudinal axis of the memory device.

8. The method of claim 1 , wherein a threshold spin-torque transfer (STT) current defines a minimum write current for establishing the first magnetic orientation and the second magnetic orientation in the magnetic layer by spin-torque alone, wherein the first write current and the second write current are less than the threshold STT current.

9. The method of claim 1 , wherein the first write current and the second write current each produce the magnetic field in the electrode when flowing through a region of the electrode having a winding orientation that is substantially perpendicular to a longitudinal axis of the memory device.

10. A method comprising:

providing a memory device having:

a first electrode,

a first magnetic layer disposed over the first electrode,

a second magnetic layer disposed over the first magnetic layer,

a barrier layer disposed between the first magnetic layer and the second magnetic layer, and

a second electrode disposed over the second magnetic layer; and

in a first operating mode, generating a first write current to flow through the second electrode of the memory device in a first direction to establish a first magnetic orientation in the second magnetic layer of the memory device;

in a second operating mode, generating a second write current to flow through the second electrode in a second direction to establish a second magnetic orientation in the second magnetic layer, wherein the second direction is different than the first direction and the second magnetic orientation is different than the first magnetic orientation; and

wherein the first write current and the second write current each produce a magnetic field in the second electrode that assists in respectively aligning the first magnetic orientation and the second magnetic orientation.

11. The method of claim 10 , wherein the first write current and the second write current each produce the magnetic field in the second electrode when flowing through a region of the second electrode having a winding orientation that is substantially perpendicular to a longitudinal axis of the memory device, wherein the region has a partially circular shape, a partially rectangular shape, or a partially circular shape having piecewise linear segments.

12. The method of claim 11 , wherein angles between the piecewise linear segments are about 30° to about 60°.

13. The method of claim 10 , wherein:

the first magnetic orientation is substantially parallel to and in substantially the same direction as a magnetic orientation in the first magnetic layer; and

the second magnetic orientation is substantially parallel to and in substantially the opposite direction as the magnetic orientation in the first magnetic layer.

14. The method of claim 10 , wherein the first write current and the second write current store a data value in the memory device using both spin-torque transfer and magnetic-field-write concurrently.

15. The method of claim 10 , further comprising reading a data value stored by the memory device by measuring a resistance when an electric potential is applied between the first electrode and the second electrode.

16. A method comprising:

providing a memory device having:

a first electrode,

a first magnetic layer disposed over the first electrode,

a second magnetic layer disposed over the first magnetic layer,

a barrier layer disposed between the first magnetic layer and the second magnetic layer, and

a second electrode disposed over the second magnetic layer, wherein the second electrode includes a magnetic assist region; and

flowing a current through the second electrode, thereby producing a magnetic field in the magnetic assist region that assists in establishing an orientation of a magnetic field in the second magnetic layer.

17. The method of claim 16 , wherein the flowing the current through the second electrode includes:

generating a first current to flow through the second electrode in a first direction to establish a first magnetic orientation of the magnetic field in the second magnetic layer; and

generating a second current to flow through the second electrode in a second direction to establish a second magnetic orientation of the magnetic field in the second magnetic layer, wherein the second direction is opposite the first direction and the second magnetic orientation is opposite the first magnetic orientation.

18. The method of claim 17 , wherein:

the first magnetic orientation is substantially parallel to and in substantially the same direction as a magnetic orientation in the first magnetic layer; and

the second magnetic orientation is substantially parallel to and in substantially the opposite direction as the magnetic orientation in the first magnetic layer.

19. The method of claim 16 , wherein the magnetic assist region has a winding orientation that is substantially perpendicular to a longitudinal axis of the memory device.

20. The method of claim 16 , wherein the flowing the current through the second electrode includes storing data in the memory device.