Antenna-assisted photovoltaic graphene detectors
View Patent ↗A photovoltaic photodetector includes a substrate, a graphene layer, and a dielectric layer positioned between the substrate and the graphene layer. One or more first antenna electrodes includes a first metal in direct contact with the graphene layer. One or more second antenna electrodes includes a second metal in direct contact with the graphene layer. The first and second metals have different work functions. A drain electrode is electrically coupled to the one or more first antenna electrodes, and a source electrode is electrically coupled to the one or more second antenna electrodes. The photovoltaic photodetector can be configured to be operable over a wavelength region of 2 μm to 24 μm and has a response time of 10 ns or less.
1. A mid-infrared photovoltaic photodetector comprising:
a substrate;
a graphene layer;
a dielectric layer positioned between the substrate and the graphene layer;
one or more first antenna electrodes, wherein each of the one or more first antenna electrodes comprises a first metal in direct contact with the graphene layer;
one or more second antenna electrodes, wherein each of the one or more second antenna electrodes comprises a second metal in direct contact with the graphene layer;
a drain electrode electrically coupled to the one or more first antenna electrodes; and
a source electrode electrically coupled to the one or more second antenna electrodes,
wherein:
the first metal and the second metal have different work functions,
the one or more first antenna electrodes and the one or more second antenna electrodes are optical antenna electrodes configured to absorb in the mid-infrared spectral region,
one of the one or more first antenna electrodes is separated from one of the one or more second antenna electrodes by a distance of 100 nm or less across the graphene layer, and
the distance defines a graphene channel between the one of the one or more first antenna electrodes and the one of the one or more second antenna electrodes.
2. The photovoltaic photodetector of claim 1 , wherein the substrate comprises a metal.
3. The photovoltaic photodetector of claim 2 , further comprising a host layer, wherein the substrate is positioned between host layer and the dielectric layer.
4. The photovoltaic photodetector of claim 1 , wherein the dielectric layer comprises aluminum oxide or silicon oxide.
5. The photovoltaic photodetector of claim 1 , further comprising a barrier layer between the graphene layer and the dielectric layer, wherein the barrier layer comprises boron nitride or molybdenum disulfide.
6. The photovoltaic photodetector of claim 5 , wherein the graphene layer is a first graphene layer, and further comprising a second graphene layer in contact with the barrier layer, wherein the second graphene layer is in direct contact with the dielectric layer.
7. The photovoltaic photodetector of claim 1 , wherein the first metal comprises palladium or titanium.
8. The photovoltaic photodetector of claim 1 , wherein the second metal comprises palladium or titanium.
9. The photovoltaic photodetector of claim 1 , wherein the each of the one or more first antenna electrodes and each of the one or more second antenna electrodes comprises the first metal in direct contact with the graphene layer and the second metal in direct contact with the graphene layer.
10. The photovoltaic photodetector of claim 1 , wherein each of the one or more first antenna electrodes comprises a third metal in contact with the first metal and each of the one or more second antenna electrodes comprises a fourth metal in contact with the second metal.
11. The photovoltaic photodetector of claim 10 , wherein the third metal and the fourth metal are the same.
12. The photovoltaic photodetector of claim 11 , wherein the third metal is gold.
13. The photovoltaic photodetector of claim 1 , wherein each of the one or more first antenna electrodes is adjacent one of the one or more second antenna electrodes.
14. The photovoltaic photodetector of claim 1 , wherein the photodetector is operable over a wavelength region of 2 μm to 24 μm.
15. The photovoltaic photodetector of claim 1 , wherein the sensitivity of the photodetector exceeds 2×10 8 cm-Hz 1/2 /W.
16. The photovoltaic photodetector of claim 1 , wherein a response time of the photodetector is 10 ns or less.
17. The photovoltaic photodetector of claim 1 , wherein a thickness of the photodetector is less than 1 μm.
18. The photovoltaic photodetector of claim 1 , wherein noise due to dark current is substantially zero.