Low parasitic capacitance low noise amplifier

1. A low noise amplifier (LNA) device, comprising:

a first transistor on a semiconductor on insulator (SOI) layer, the first transistor including a source region, a drain region, and a gate;

a first-side gate contact coupled to the gate;

a second-side source contact coupled to the source region;

a second-side drain contact coupled to the drain region;

a first via coupled to the source region through the second-side source contact, the first via extending through an isolation layer of the SOI layer and into a second-side dielectric layer supporting the isolation layer; and

a second via coupled to the drain region through the second-side drain contact, the second via extending through the isolation layer of the SOI layer and into the second-side dielectric layer.

2. The LNA device of claim 1 , in which a first-side comprises a front-side of the first transistor, and a second-side comprises a backside of the first transistor.

3. The LNA device of claim 1 , in which a second-side comprises a front-side of the first transistor, and a first-side comprises a backside of the first transistor.

4. The LNA device of claim 1 , in which the second-side source contact and/or the second-side drain contact comprises a silicide contact layer.

5. The LNA device of claim 1 , further comprising a first-side back-end-of-line (BEOL) interconnect coupled to the first-side gate contact and arranged in a first-side dielectric layer.

6. The LNA device of claim 1 , in which the first transistor further comprising

a handle substrate on a first-side dielectric layer or the second side dielectric layer.

7. The LNA device of claim 1 , further comprising at least one radio frequency (RF) component coupled to the second-side source contact and/or the second-side drain contact.

8. The LNA device of claim 7 , in which the at least one RF component comprises at least one of a resistor, an inductor, a capacitor, or an antenna.

9. The LNA device of claim 1 , integrated into an RF front end module, the RF front end module incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, a mobile phone, and a portable computer.

10. A method of constructing a low noise amplifier (LNA) device, comprising:

fabricating a first transistor on a first surface of an isolation layer supported by a sacrificial substrate, the first transistor comprising a gate coupled to a first-side gate contact;

depositing a first-side dielectric layer on the first transistor;

bonding a handle substrate to the first-side dielectric layer;

removing the sacrificial substrate;

exposing a second-side of a source region and a second-side of a drain region of the first transistor through a second surface opposite the first surface of the isolation layer;

depositing a second-side source contact on the second-side of the source region;

depositing a second-side drain contact on the second-side of the drain region;

fabricating a first via coupled to the source region through the second-side source contact, the first via extending through the isolation layer and into a second-side dielectric layer supporting the isolation layer; and

fabricating a second via coupled to the drain region through the second-side drain contact, the second via extending through the isolation layer and into the second-side dielectric layer.

11. The method of claim 10 , further comprising coupling at least one radio frequency (RF) component to the second-side source contact and/or the second-side drain contact.

12. The method of claim 11 , in which the at least one RF component comprises at least one of a resistor, an inductor, a capacitor, or an antenna.

13. The method of claim 10 , further comprising fabricating a post-layer transfer metallization layer in the second-side dielectric layer and coupled to the second-side source contact and/or the second-side drain contact of the first transistor through the first via and/or the second via.

14. The method of claim 10 , further comprising integrating the LNA device into an RF front end module, the RF front end module incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, a mobile phone, and a portable computer.

15. A radio frequency (RF) front end module, comprising:

a low noise amplifier, comprising a first transistor on a semiconductor on insulator (SOI) layer, the first transistor including a source region, a drain region, and a gate, a first-side gate contact coupled to the gate, a second-side source contact coupled to the source region, a second-side drain contact coupled to the drain region, a first via coupled to the source region through the second-side source contact, the first via extending through an isolation layer of the SOT layer and into a second-side dielectric layer supporting the isolation layer, and a second via coupled to the drain region through the second-side drain contact, the second via extending through the isolation layer of the SOT layer and into the second-side dielectric layer; and

an antenna coupled to an output of the low noise amplifier.

16. The RF front end module of claim 15 , in which a first-side comprises a front-side of the first transistor, and a second-side comprises a backside of the first transistor, the second-side being distal from the first-side.

17. The RF front end module of claim 15 , in which a second-side comprises a front-side of the first transistor, and a first-side comprises a backside of the first transistor, the first-side being distal from the second-side.

18. The RF front end module of claim 15 , in which the first transistor further comprises

a handle substrate on a first-side dielectric layer or the second-side dielectric layer.

19. The RF front end module of claim 15 , further comprising at least one radio frequency (RF) component coupled to the second-side source contact and/or the second-side drain contact.