Heterostructure including anodic aluminum oxide layer

1. A semiconductor heterostructure comprising:

an active region configured to emit radiation;

a first semiconductor layer located on a first side of the active region;

an anodic aluminum oxide layer immediately adjacent to the first semiconductor layer, wherein the anodic aluminum oxide layer includes a plurality of pores extending only to an adjacent surface of the first semiconductor layer, wherein an entire bottom portion of each of the plurality of pores interfaces with the adjacent surface of the first semiconductor layer;

a layer of a first material immediately adjacent to the anodic aluminum oxide layer, wherein the layer of first material covers the plurality of pores, penetrates a first subset of the plurality of pores, and directly contacts the adjacent surface of the first semiconductor layer; and

a second material penetrating a second subset of the plurality of pores distinct from the first subset, wherein the second material is distinct from the first material.

2. The heterostructure of claim 1 , wherein the first semiconductor layer comprises a contact layer and wherein at least one of the first or second materials is a conductive material forming an ohmic contact with the first semiconductor layer.

3. The heterostructure of claim 2 , wherein the conductive material is a transparent conductive oxide.

4. The heterostructure of claim 2 , wherein a characteristic distance between the plurality of pores is less than a current spreading length.

5. The heterostructure of claim 1 , wherein at least one of the first or second materials is a reflective material.

6. The heterostructure of claim 1 , wherein the first material is a metallic material and the second material is an ultraviolet transparent material.

7. The heterostructure of claim 6 , wherein the first subset of the plurality of pores is located on an outer edge of the anodic aluminum oxide layer and the second subset of the plurality of pores is located on an inner portion of the anodic aluminum oxide layer.

8. The heterostructure of claim 1 , wherein at least a portion of the second subset of the plurality of pores are only partially filled with the second material.

9. The heterostructure of claim 1 , wherein at least one of: a density or a size of the plurality of pores varies laterally.

10. The heterostructure of claim 1 , further comprising an optical element attached to the anodic aluminum oxide layer.

11. An optoelectronic device comprising:

a heterostructure including:

an active region configured to emit radiation during operation of the device;

an anodic aluminum oxide layer located on a first side of the active region immediately adjacent to a first semiconductor layer in the heterostructure, wherein the anodic aluminum oxide layer includes a plurality of pores extending entirely through the anodic aluminum oxide layer only to an adjacent surface of the first semiconductor layer in the heterostructure, wherein an entire bottom portion of each of the plurality of pores interfaces with the adjacent surface of the first semiconductor layer; and

a first filler material penetrating only a first subset of the plurality of-pores of the anodic aluminum oxide layer and directly contacting the adjacent surface of the first semiconductor layer, wherein a second subset of the plurality of pores distinct from the first subset are not penetrated by the first filler material.

12. The optoelectronic device of claim 11 , further comprising a second filler material penetrating the second subset of the plurality of pores, wherein the second filler material is distinct from the first filler material.

13. The optoelectronic device of claim 11 , wherein the anodic aluminum oxide layer is located on an external surface of the heterostructure.

14. The optoelectronic device of claim 13 , further comprising a device component attached to an external surface of the anodic aluminum oxide layer using the first filler material.

15. The optoelectronic device of claim 14 , wherein the device component is a lens.

16. The optoelectronic device of claim 13 , wherein the first semiconductor layer in the heterostructure is one of: a substrate, an n-type contact layer, or a p-type contact layer.

17. A method of fabricating an optoelectronic device, the method comprising:

forming a heterostructure for the optoelectronic device, wherein the forming includes:

forming an active region configured to emit radiation during operation of the device;

forming an anodic aluminum oxide layer located on a first side of the active region immediately adjacent to a first semiconductor layer in the heterostructure, wherein the anodic aluminum oxide layer includes a plurality of pores extending entirely through the anodic aluminum oxide layer only to an adjacent surface of the first semiconductor layer in the heterostructure, wherein an entire bottom portion of each of the plurality of pores interfaces with the adjacent surface of the first semiconductor layer; and

causing a first filler material to penetrate only a first subset of the plurality of pores of the anodic aluminum oxide layer and directly contact the adjacent surface of the first semiconductor layer, wherein a second subset of the plurality of pores distinct from the first subset are not penetrated by the first filler material.

18. The method of claim 17 , the method further comprising attaching a device component to an external surface of the anodic aluminum oxide layer using the first filler material.

19. The method of claim 18 , wherein the device component is one of: a lens or a contact.

20. The method of claim 17 , further comprising selecting a morphology for the plurality of pores based on at least one of: a desired conductivity, a desired reflectivity, or a desired transparency.