Rotatable substrate support having radio frequency applicator

1. A plasma processing system comprising:

a processing chamber comprising:

a first electrode, wherein the first electrode at least partially defines a plasma cavity within the processing chamber, and

a second electrode, wherein the second electrode defines a plurality of apertures through the second electrode, and wherein the second electrode at least partially defines the plasma cavity within the processing chamber;

a plasma source electrically coupled with the first electrode and configured to generate a plasma within the plasma cavity; and

a substrate support assembly including:

a shaft assembly comprising a rotatable shaft surrounding a central conductive shaft, and an electrically insulative shaft positioned between the central conductive shaft and the rotatable shaft,

a pedestal coupled to the central conductive shaft of the shaft assembly, and

a first rotary connector coupled to the shaft assembly, wherein the first rotary connector comprises a rotatable radio frequency applicator, the rotatable radio frequency applicator comprising:

a first coil member surrounding a rotatable shaft member that is electromagnetically coupled to the shaft assembly during operation, the first coil member being rotatable with the rotatable shaft member during operation,

a second coil member surrounding the first coil member, the second coil member being stationary relative to the first coil member, wherein the first coil member electromagnetically couples with the second coil member when the rotatable radio frequency applicator is energized and provides a radio frequency power to the pedestal through the shaft assembly;

a first ground member coupling the first coil member with a rotatable portion of the shaft assembly; and

a second ground member coupling the second coil member with a stationary portion of the shaft assembly.

2. The plasma processing system of claim 1 , wherein, during operation, the first ground member and the second ground member provide two separated RF return paths to make a unified DC ground reference.

3. The plasma processing system of claim 1 , wherein the first coil member inductively couples with the second coil member when the rotating radio frequency applicator is energized.

4. The plasma processing system of claim 1 , wherein the central conductive shaft is coupled to the rotatable shaft member, and the rotatable shaft member comprises a dielectric material.

5. The plasma processing system of claim 4 , wherein the rotatable shaft member comprises a ferrite structure.

6. The plasma processing system of claim 1 , further comprising:

a second rotary connector for providing a coolant to the pedestal.

7. The plasma processing system of claim 6 , further comprising:

a third rotary connector for transmitting electrical signals/power to and from the pedestal.

8. The plasma processing system of claim 7 , further comprising:

a fourth rotary connector for providing a gas to the pedestal.

9. The plasma processing system of claim 1 , wherein the conductive central shaft is adapted to electromagnetically couple to the first coil member.

10. The plasma processing system of claim 9 , wherein the conductive central shaft includes a circular conductive plate disposed at an end of the conductive central shaft disposed in the pedestal.

11. The plasma processing system of claim 9 , further comprising a conductive housing disposed about the rotatable radio frequency applicator.

12. The plasma processing system of claim 11 , wherein the conductive housing comprises a slit containing a dielectric material.

13. The plasma processing system of claim 12 , wherein the slit is formed through the conductive housing.

14. A processing system comprising:

a processing chamber comprising:

a precursor inlet assembly,

a first distribution plate device defining a plurality of apertures providing fluid access to a processing region of the processing chamber, and

a second distribution plate defining a plurality of apertures, wherein the second distribution plate is positioned between the first distribution plate device and the precursor inlet assembly; and

a substrate support assembly comprising:

a shaft assembly comprising a rotatable shaft surrounding a central conductive shaft, and an electrically insulative shaft positioned between the central conductive shaft and the rotatable shaft,

a pedestal coupled to the central conductive shaft of the shaft assembly and positioned within the processing region of the processing chamber, and

a first rotary connector coupled to the shaft assembly, wherein the first rotary connector comprises:

a rotatable coil member surrounding a rotatable dielectric shaft that is electromagnetically coupled to the shaft assembly during operation,

a stationary coil member surrounding the rotatable coil member, wherein the rotatable coil member electromagnetically couples with the stationary coil member when the rotatable coil member is energized and provides a radio frequency power to the pedestal via a connector coupled to the central portion of the shaft assembly, and

a conductive housing disposed about the stationary coil member.

15. The processing system of claim 14 , wherein the conductive housing comprises a circular housing surrounding the stationary coil member and one or more conductive plates surrounding the rotatable dielectric shaft.

16. The processing system of claim 14 , wherein, during operation, two separated RF return paths are formed to make a unified DC ground reference.

17. A plasma processing system comprising:

a processing chamber comprising:

a precursor inlet assembly,

a plasma source coupled with the precursor inlet assembly

a first distribution plate device defining a plurality of apertures providing fluid access to a processing region of the processing chamber, and

a second distribution plate defining a plurality of apertures, wherein the second distribution plate is positioned between the first distribution plate device and the precursor inlet assembly; and

a substrate support assembly comprising:

a shaft assembly comprising a rotatable shaft surrounding a central conductive shaft, and an electrically insulative shaft positioned between the central conductive shaft and the rotatable shaft;

a pedestal coupled to the central conductive shaft of the shaft assembly; and

a first rotary connector coupled to the shaft assembly, wherein the first rotary connector comprises a rotatable radio frequency applicator, the rotatable radio frequency applicator comprising:

a rotating conductive member surrounding a rotatable shaft member that is coupled to the central conductive shaft and electromagnetically coupled to the shaft assembly during operation;

a stationary conductive member at least partially surrounding the rotating conductive member, wherein the rotating conductive member electromagnetically couples with the stationary conductive member when the rotatable radio frequency applicator is energized and provides a radio frequency power to the pedestal through the shaft assembly;

a conductive housing surrounding the rotatable radio frequency applicator;

a first ground member coupling the rotating conductive member with the rotatable shaft member; and

a second ground member coupling the stationary conductive member with the conductive housing.

18. The plasma processing system of claim 17 , wherein, during operation, the first ground member and the second ground member provide two separated RF return paths to make a unified DC ground reference.

19. The plasma processing system of claim 17 , wherein the rotatable shaft member comprises a dielectric material.

20. The plasma processing system of claim 19 , wherein the rotatable shaft member comprises a ferrite structure.