Organic electroluminescent display panel with semiconductor layer, manufacturing method for manufacturing the same, and display device

1. An organic electroluminescent display panel comprising:

a base substrate, a first electrode and a second electrode on the base substrate, and an organic light emitting layer located between the first electrode and the second electrode, wherein the first electrode is closer to the base substrate than the second electrode,

wherein the organic electroluminescent display panel further comprises a semiconductor layer covering the entire base substrate of the display panel, wherein the semiconductor layer is located between the organic light emitting layer and one of the first electrode and the second electrode,

wherein the semiconductor layer comprises a first portion and a second portion, an orthographic projection of the first portion of the semiconductor layer on the first electrode overlaps the first electrode, the second portion of the semiconductor layer covers a side surface of the first electrode, the side surface of the first electrode is crossed with a plane where the base substrate is located, and the first portion of the semiconductor layer and the second portion of the semiconductor layer are integral.

2. The organic electroluminescent display panel according to claim 1 , wherein a value of current flowing through the semiconductor layer is greater than a value of current required for lightening the organic electroluminescent display panel, the value of current flowing through the semiconductor layer is a value of current corresponding to a turn-on voltage of a thin film transistor when the thin film transistor in a thin film transistor array circuit in the organic electroluminescent display panel is turned-on.

3. The organic electroluminescent display panel according to claim 1 , wherein the semiconductor layer is made of an organic compound semiconductor, an amorphous semiconductor, or an oxide semiconductor.

4. The organic electroluminescent display panel according to claim 1 , wherein a thickness of the semiconductor layer is in a range of 500 Å to 1000 Å.

5. The organic electroluminescent display panel according to claim 1 , wherein the first electrode is made of a metal material or a transparent conductive material, and the second electrode is made of a metal material or a transparent conductive material.

6. The organic electroluminescent display panel according to claim 1 , wherein the organic electroluminescent display panel further comprises a hole injection layer located between the first electrode and the organic light emitting layer.

7. The organic electroluminescent display panel according to claim 6 , wherein the semiconductor layer is located between the first electrode and the organic light emitting layer, the hole injection layer is located between the first electrode and the semiconductor layer or between the semiconductor layer and the organic light emitting layer; or if the semiconductor layer is located between the second electrode and the organic light emitting layer, the hole injection layer is located between the first electrode and the organic light emitting layer.

8. The organic electroluminescent display panel according to claim 1 , wherein the organic electroluminescent display panel comprises an electron transport layer located between the second electrode and the organic light emitting layer.

9. The organic electroluminescent display panel according to claim 8 , wherein if the semiconductor layer is located between the first electrode and the organic light emitting layer, the electron transport layer is located between the organic light emitting layer and the second electrode; or if the semiconductor layer is located between the second electrode and the organic light emitting layer, the electron transport layer is located between the second electrode and the semiconductor layer or between the semiconductor layer and the organic light emitting layer.

10. A display device comprising the organic electroluminescent display panel according to claim 1 .

11. The organic electroluminescent display panel according to claim 1 , wherein the first electrode is an anode, the second electrode is a cathode; or

the first electrode is a cathode, the second electrode is an anode.

12. The organic electroluminescent display panel according to claim 1 , wherein the second portion of the semiconductor layer covers a side surface of a hole injection layer, and the side surface of the hole injection layer is crossed with the plane where the base substrate is located.

13. An organic electroluminescent display panel, comprising a base substrate, a first electrode and a second electrode on the base substrate, and an organic light emitting layer located between the first electrode and the second electrode,

wherein the organic electroluminescent display panel further comprises a semiconductor layer covering the entire base substrate, wherein the semiconductor layer is located between the organic light emitting layer and one of the first electrode and the second electrode,

the semiconductor layer is made of an amorphous semiconductor, and

the amorphous semiconductor is made of an amorphous silicon semiconductor.

14. A method for manufacturing an organic electroluminescent display panel comprising forming a first electrode, an organic light emitting layer, and a second electrode on a base substrate, wherein the first electrode is closer to the base substrate than the second electrode, the method further comprises: forming a semiconductor layer between the first electrode and the second electrode, wherein the semiconductor layer covers the entire base substrate of the display panel,

wherein the semiconductor layer comprises a first portion and a second portion, an orthographic projection of the first portion of the semiconductor layer on the first electrode overlaps the first electrode, the second portion of the semiconductor layer covers a side surface of the first electrode, the side surface of the first electrode is crossed with a plane where the base substrate is located, and the first portion of the semiconductor layer and the second portion of the semiconductor layer are integral.

15. The method according to claim 14 , wherein, prior to forming the semiconductor layer between the first electrode and the second electrode, the method comprises: forming the first electrode on the base substrate; and depositing the semiconductor layer on the first electrode through chemical vapor deposition.

16. The method according to claim 15 , further comprising forming a hole injection layer between the first electrode and the organic light emitting layer.

17. The method according to claim 15 , further comprising forming an electron transport layer between the organic light emitting layer and the second electrode.

18. The method according to claim 14 , wherein, prior to forming the semiconductor layer between the first electrode and the second electrode, the method comprises: forming the second electrode on the base substrate; and depositing the semiconductor layer on the second electrode through chemical vapor deposition.

19. The method according to claim 14 , wherein prior to forming the first electrode, the organic light emitting layer, and the second electrode on the base substrate, the method comprises: forming a plurality of thin film transistor array circuits arranged in matrix on the base substrate; a value of current flowing through the semiconductor layer is greater than a value of current required for lightening the organic electroluminescent display panel; and the value of current flowing through the semiconductor layer is a value of current corresponding to a turn-on voltage of the thin film transistor when the thin film transistor in the thin film transistor array circuit is turned on.

20. The method according to claim 14 , wherein the semiconductor layer is made of an organic compound semiconductor, an amorphous semiconductor, or an oxide semiconductor.