Thin film transistor substrate and display device
Disclosed is a thin film transistor substrate that may include a base substrate, a first protection film disposed on the base substrate, an oxide semiconductor layer disposed on the first protection film, a gate electrode insulated from the oxide semiconductor layer and partially overlapped with at least one portion of the oxide semiconductor layer, a source electrode connected with the oxide semiconductor layer, and a drain electrode provided at a predetermined interval from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer has a hydrogen content of 2.4 at % (atomic % or atom %)˜2.6 at %.
1. A method for manufacturing a thin film transistor substrate comprising:
forming a first protection film on a base substrate, the first protection film comprising a first silicon oxide layer, a silicon nitride layer, and a second silicon oxide layer which are sequentially stacked;
after forming the first protection film, forming an oxide semiconductor layer on the first protection film;
forming source and drain electrodes provided at a predetermined interval from each other and connected with the oxide semiconductor layer;
forming a gate electrode insulated from the oxide semiconductor layer and partially overlapped with at least one portion of the oxide semiconductor layer; and
performing a thermal treatment at less than 350° C.,
wherein the oxide semiconductor layer has a hydrogen content of 2.4 at % (atomic % or atom %)˜2.6 at %.
2. The method according to claim 1 , further comprising implanting hydrogen into the oxide semiconductor layer.
3. The method according to claim 1 , further comprising forming a second protection film on the oxide semiconductor layer.
4. The method according to claim 3 , wherein any one of the first protection film and the second protection film has a hydrogen content of 0.7 at % ˜0.8 at %, and the other of the first protection film and the second protection film has a hydrogen content of 3.0 at % ˜3.1 at %.
5. The method according to claim 3 , further comprising carrying out a thermal treatment after forming the second protection film.