Semiconductor device, microphone and method for producing a semiconductor device

1. A semiconductor device comprising:

a membrane structure having an opening;

a first backplate structure arranged on a first side of the membrane structure;

a second backplate structure arranged on a second side of the membrane structure; and

a vertical connection structure connecting the first backplate structure to the second backplate structure,

wherein the vertical connection structure extends through the opening,

wherein the vertical connection structure comprises a second partial region arranged vertically between a first partial region and a third partial region, and

wherein a material of the second partial region is different than a material of the first partial region and of the third partial region.

2. The semiconductor device according to Claim 1 , wherein the material of the first partial region and of the third partial region is an electrically insulating material.

3. The semiconductor device according to claim 1 , wherein the vertical connection structure and the membrane structure are spaced apart from one another by at least 100 nm laterally in a region of the opening.

4. The semiconductor device according to claim 1 , wherein an average circumference of the vertical connection structure in a region between the first backplate structure and the membrane structure differs by at least 10% from an average circumference of the vertical connection structure in a region between the membrane structure and the second backplate structure.

5. The semiconductor device according to claim 1 , wherein at least one of the first backplate structure and the second backplate structure has a plurality of passages.

6. The semiconductor device according to claim 5 , wherein the plurality of passages takes up at least 60% of a surface area of at least one of the first backplate structure and the second backplate structure.

7. The semiconductor device according to claim 1 , wherein the membrane structure is arranged in a cavity between the first backplate structure and the second backplate structure.

8. The semiconductor device according to claim 1 , wherein a lateral distance between the vertical connection structure and an edge of the membrane structure is at least 25% of a lateral extension of the membrane structure.

9. The semiconductor device according to claim 1 , wherein a lateral distance between the opening and an edge of the membrane structure is at least 5 μm.

10. The semiconductor device according to claim 1 , furthermore comprising a first circuit, which is configured to apply different electrical potentials to the membrane structure and at least one of the first backplate structure and the second backplate structure.

11. The semiconductor device according to claim 1 , furthermore comprising a second circuit, which is configured to generate a signal dependent on the distance between the membrane structure and the first backplate structure or the second backplate structure.

12. The semiconductor device of claim 1 , wherein the semiconductor device is a microphone.

13. A method for producing a semiconductor device, the method comprising:

shaping a first layer structure for producing a first backplate structure;

shaping a second layer structure for producing a membrane structure having an opening;

shaping a third layer structure for producing a second backplate structure; and

removing at least one part of a first sacrificial layer structure between the first backplate structure and the membrane structure and at least one part of a second sacrificial layer structure between the second backplate structure and the membrane structure, such that a vertical connection structure remains which connects the first backplate structure to the second backplate structure and extends through the opening of the membrane structure,

wherein removing the at least one part of the first sacrificial layer structure comprises forming a first partial region of the vertical connection structure,

wherein removing the at least one part of the second sacrificial layer structure comprises forming a third partial region of the vertical connection structure,

wherein the vertical connection structure comprises a second partial region arranged vertically between a first partial region and a third partial region, and

wherein a material of the second partial region is different than a material of the first partial region and of the third partial region.

14. The method according to claim 13 , wherein producing the membrane structure comprises structuring the membrane structure, such that at least two partial regions of the membrane structure separated from one another are formed.

15. The method according to claim 14 , wherein a first of the at least two partial regions of the membrane structure separated from one another is the second partial region of the vertical connection structure.

16. The method according to claim 13 ,

wherein removing the at least one part of the first sacrificial layer structure comprises shaping the first partial region of the vertical connection structure which extends through the first sacrificial layer structure, and

wherein the first partial region of the vertical connection structure comprises a different material than the first sacrificial layer structure.

17. The method according to claim 13 ,

wherein removing the at least one part of the second sacrificial layer structure comprises shaping the second partial region of the vertical connection structure which extends through the second sacrificial layer structure, and

wherein the second partial region of the vertical connection structure comprises a different material than the second sacrificial layer structure.

18. The method according to claim 13 , wherein the first sacrificial layer structure and the second sacrificial layer structure have no structures running vertically through the sacrificial layer structure.

19. The method according to claim 13 , wherein shaping the first layer structure and shaping the third layer structure comprise forming a plurality of passages in the first backplate structure and the second backplate structure.

20. The semiconductor device according to claim 1 , wherein the second partial region and the membrane structure comprise a same material.