Bonded structures for package and substrate
The embodiments described provide elongated bonded structures near edges of packaged structures free of solder wetting on sides of copper posts substantially facing the center of the packaged structures. Solder wetting occurs on other sides of copper posts of these bonded structures. The elongated bonded structures are arranged in different arrangements and reduce the chance of shorting between neighboring bonded structures. In addition, the elongated bonded structures improve the reliability performance.
1. A package comprising:
a conductive pillar over an opening through a passivation layer, the opening exposing a conductive pad; and
a conductive material located between the conductive pillar and the conductive pad, the conductive material extending into the opening, wherein the conductive material wets a first side of the conductive pillar more than a second side of the conductive pillar opposite the first side, wherein the first side of the conductive pillar has a wetted length equal to or less than a difference between a length of the conductive pillar and one-half of a width of the conductive pillar.
2. The package of claim 1 , wherein the conductive pillar is part of a first plurality of conductive pillars, where each conductive pillar within the first plurality of conductive pillars has a first elongated shape and are aligned in a first direction.
3. The package of claim 2 , wherein the first direction is aligned with a center of the package.
4. The package of claim 3 , further comprising a second plurality of conductive pillars, where each conductive pillar within the second plurality of conductive pillars has the first elongated shape and is aligned in a second direction different from the first direction, wherein the second direction is aligned with the center of the package.
5. The package of claim 4 , wherein the first plurality of conductive pillars and the second plurality of conductive pillars are located along an edge of the package.
6. The package of claim 3 , further comprising a second conductive material in physical connection with a second conductive pillar, the second conductive pillar being one of the first plurality of conductive pillars, wherein the conductive pillar and the second conductive pillar are neighbors to each other and wherein the conductive material has a first widest point and the second conductive material has a second widest point that is misaligned from the first widest point.
7. The package of claim 6 , wherein the second conductive pillar has a first surface facing the center and a second surface facing away from the center, wherein the second surface is wetted by the second conductive material more than the first surface.
8. A semiconductor device comprising:
a first package, the first package comprising:
a first contact pad and a second contact pad over a first substrate;
a passivation layer comprising a first portion extending from over the first contact pad to over the second contact pad; and
a second package, the second package comprising a first conductive pillar with a first elongated shape and a first straight sidewall, wherein the first conductive pillar is over the first contact pad and at least partially over the first portion of the passivation layer, the first conductive pillar having a second sidewall opposite the first straight sidewall, the first straight sidewall having a wetted length equal to or less than a difference between a length of the first conductive pillar and one-half of a width of the first conductive pillar.
9. The semiconductor device of claim 8 , wherein the first straight sidewall is located over the first contact pad and the second sidewall is located laterally removed from the first contact pad.
10. The semiconductor device of claim 8 , wherein the first straight sidewall being wetted by solder more than the second sidewall, the second sidewall facing a center of the second package.
11. The semiconductor device of claim 8 , wherein the first conductive pillar is part of a first plurality of conductive pillars, wherein each of the first plurality of conductive pillars has the first elongated shape with an axis and all of the axes of the first plurality of conductive pillars are parallel.
12. The semiconductor device of claim 11 , further comprising a second plurality of conductive pillars adjacent to the first plurality of conductive pillars, wherein each of the second plurality of conductive pillars has a second elongated shape with an axis and all of the axes of the second plurality of conductive pillars are parallel with each other and not parallel with the axes of the first plurality of conductive pillars.
13. The semiconductor device of claim 11 , wherein each of the first plurality of conductive pillars has a first sidewall and a second sidewall opposite the first sidewall, the first sidewall being wetted by solder more than the second sidewall, the second sidewall facing a center of the second package.
14. The semiconductor device of claim 8 , further comprising solder extending from contacting the first conductive pillar to the first contact pad.
15. A package comprising:
a first conductive structure on a first substrate, the first conductive structure comprising a conductive pillar with a length and a width;
a conductive pad on a second substrate, wherein the first conductive structure is at least partially over the conductive pad; and
a reflowable material connecting the first conductive structure with the conductive pad, wherein a sidewall of the conductive pillar has a wetted length equal to or less than a difference between the length and one-half of the width.
16. The package of claim 15 , further comprising:
a second conductive structure on the first substrate, the second conductive structure being adjacent to the first conductive structure, the second conductive structure comprising a second conductive pillar with a second length and a second width;
a second conductive pad on the second substrate, wherein the second conductive structure is at least partially over the second conductive pad; and
a second reflowable material connecting the second conductive structure with the second conductive pad, wherein a sidewall of the second conductive pillar has a wetted length equal to or less than a difference between the second length and one-half of the second width.
17. The package of claim 16 , wherein a line extends from a first surface of the first conductive structure to a second surface of the second conductive structure, the first surface and the second surface facing a same direction, the line also intersecting an axis of the second conductive structure at an angle of between about 30° to about 60°.
18. The package of claim 17 , wherein a space between the first conductive structure and the second conductive structure is from about 10 μm to about 130 μm.
19. The package of claim 16 , wherein the first conductive structure has a first offset from the conductive pad and wherein the second conductive structure has a second offset from the second conductive pad, the second offset being greater than the first offset.
20. The package of claim 15 , wherein a first side of the first conductive structure is wetted by solder more than a second side of the first conductive structure.