Semiconductor device having plate-shaped metal terminals facing one another

1. A semiconductor device comprising:

a plate-shaped first metal terminal;

a plate-shaped second metal terminal facing the first metal terminal;

a resin layer between the first metal terminal and the second metal terminal; and

a semiconductor chip having a first upper electrode electrically connected to the first metal terminal and a first lower electrode electrically connected to the second metal terminal,

wherein a first distance between the first metal terminal and the second metal terminal at an end portion of the first metal terminal on a side opposite to a side electrically connected to the semiconductor chip is larger than a second distance between the first metal terminal and the second metal terminal at a portion located in a direction from the end portion of the first metal terminal toward the semiconductor chip.

2. The semiconductor device according to claim 1 , wherein an end portion of the second metal terminal exists at a position facing the end portion of the first metal terminal.

3. The semiconductor device according to claim 1 , wherein the first distance is 1.2 times or more and 2.0 times or less the second distance.

4. The semiconductor device according to claim 1 , wherein a thickness of the first metal terminal is equal to a thickness of the second metal terminal.

5. The semiconductor device according to claim 1 , wherein a thickness of the first metal terminal is thinned toward the end portion of the first metal terminal and a thickness of the second metal terminal is thinned toward the end portion of the second metal terminal.

6. The semiconductor device according to claim 1 , wherein the resin layer is a thermoplastic resin.

7. A semiconductor device comprising:

a substrate;

a first metal layer on the substrate;

a second metal layer on the substrate;

a first semiconductor chip on the first metal layer and having a first upper electrode, a first lower electrode, and a first gate electrode;

a second semiconductor chip on the second metal layer and having a second upper electrode, a second lower electrode, and a second gate electrode;

a plate-shaped first metal terminal electrically connected to the first upper electrode;

a plate-shaped second metal terminal facing the first metal terminal and electrically connected to the second lower electrode;

a third metal terminal electrically connected to the first lower electrode and the second upper electrode;

a first gate terminal electrically connected to the first gate electrode;

a second gate terminal electrically connected to the second gate electrode; and

a resin layer between the first metal terminal and the second metal terminal,

wherein a first distance between the first metal terminal and the second metal terminal at an end portion of the first metal terminal on a side opposite to a side electrically connected to the first semiconductor chip is larger than a second distance between the first metal terminal and the second metal terminal at a portion located in a direction from the end portion of the first metal terminal toward the first semiconductor chip.

8. The semiconductor device according to claim 7 , wherein an end portion of the second metal terminal exists at a position facing the end portion of the first metal terminal.

9. The semiconductor device according to claim 7 , wherein the first distance is 1.2 times or more and 2.0 times or less the second distance.

10. The semiconductor device according to claim 7 , wherein a thickness of the first metal terminal is equal to a thickness of the second metal terminal.

11. The semiconductor device according to claim 7 , wherein a thickness of the first metal terminal is thinned toward the end portion of the first metal terminal and a thickness of the second metal terminal is thinned toward the end portion of the second metal terminal.

12. The semiconductor device according to claim 7 , wherein the resin layer is a thermoplastic resin.