IP Library › Granted Patent US 10,468,996
Granted Patent B2
US 10,468,996 · App. 15/532,643 · Granted Nov 5, 2019

Triboelectric generation device

Inventors: Young-jun Park (Suwon-si, KR); Sang-woo Kim (Yongin-si, KR); Yun-kwon Park (Dongducheon-si, KR); Wan chul Seung (Yongin-si, KR); Hong-joon Yoon (Goyang-si, KR); Keun young Lee (Suwon-si, KR); Jeong hwan Lee (Gumi-si, KR); Ju-hyuck Lee (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H02N1/04H01B1/20H02N1/08H02N1/10
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Quick Facts
Patent No.
US 10,468,996
App. No.
15/532,643
Granted
Nov 5, 2019
Kind
B2
Abstract

The present disclosure enables materials of a triboelectric charging member to exhibit a characteristic of increased surface charge density, thereby improving output of a triboelectric generating device. Accordingly, the present disclosure provides a triboelectric generating device showing improved output without increasing a size of the triboelectric generating device or without increasing amounts of materials required for the triboelectric generating device. An embodiment of a triboelectric generating device provided according to a first aspect of the present disclosure includes a first electrode; a first charging layer formed on the first electrode; and a second electrode disposed on the first charging layer, wherein the first charging layer and the second electrode are arranged such that an interface between the first charging layer and the second electrode forms a frictional interface, and the first charging layer includes a ferroelectric polymer matrix and ferroelectric inorganic particles dispersed in the ferroelectric polymer matrix.

Claims (19)

1. A triboelectric generating device, comprising:

a first electrode;

a first charging layer formed on the first electrode; and

a second electrode disposed on the first charging layer, wherein the first charging layer and the second electrode are arranged such that an interface between the first charging layer and the second electrode forms a frictional interface, and

the first charging layer comprises a ferroelectric polymer matrix and ferroelectric inorganic particles dispersed in the ferroelectric polymer matrix.

2. The triboelectric generating device of claim 1 , wherein the first electrode and the second electrode are each independently one or more selected from the group consisting of aluminum (Al), copper (Cu), magnesium (Mg), tungsten (W), iron (Fe), platinum (Pt), gold (Au), silver (Ag), tantalum (Ta), titanium (Ti), palladium (Pd), ruthenium (Ru), alloys thereof, carbon nanotube, graphene, ITO (indium tin oxide), tantalum nitride (TaN), titanium nitride (TiN), and conductive polymers.

3. The triboelectric generating device of claim 1 , wherein the ferroelectric polymer matrix comprises one or more polymers selected from the group consisting of polyvinylidene fluoride (PVDF), polydimethylsiloxane (PDMS), polyimide, P(VDF-TrFE), P(VDF-TrFECFE), and P(VDF-HFP).

4. The triboelectric generating device of claim 1 , wherein the ferroelectric inorganic particles comprise one or more selected from the group consisting of PZT (lead zirconate titantate), barium titanate (BaTiO 3 ), zinc oxide (ZnO), gallium nitride (GaN), aluminium nitride (AlN), PbTiO 3 , triglycine sulfate ((NH 2 CH 2 COOH) 3 •H 2 SO 4 ), lithium tantalate (LiTaO 3 ), and lithium niobate (LiNbO 3 ).

5. The triboelectric generating device of claim 1 , wherein an average particle size of the ferroelectric inorganic particles is 80 nm to 800 nm.

6. The triboelectric generating device of claim 1 , wherein an amount of the ferroelectric inorganic particles in the first charging layer is 1 part by weight to 40 parts by weight, based on 100 parts by weight of the ferroelectric polymer matrix.

7. The triboelectric generating device of claim 1 , wherein a thickness of the first charging layer is 0.01 μm to 300 μm.

8. The triboelectric generating device of claim 1 , wherein a content of the ferroelectric inorganic particles in the first charging layer exhibits a gradient varying in a thickness direction of the first charging layer.

9. The triboelectric generating device of claim 8 , wherein, as the distance from the frictional interface increases, a distribution of the ferroelectric inorganic particles in the first charging layer gradually increases from a sparse state to a dense state.

10. The triboelectric generating device of claim 8 , wherein the first charging layer is a laminate of at least two sub-charging layers which have a different content of the inorganic particles from each other, and in this case, a sub-charging layer having a lowest content of the inorganic particles is disposed so as to form the frictional interface.

11. The triboelectric generating device of claim 10 , wherein the content of the ferroelectric inorganic particles in the sub-charging layer having the lowest content of the inorganic particles is gradually increased from 0 parts by weight to about 40 parts by weight, based on 100 parts by weight of the ferroelectric polymer matrix of the corresponding sub-charging layer.

12. The triboelectric generating device of claim 10 , wherein a thickness of the sub-charging layer having the lowest content of the inorganic particles is 0.01 μm to 300 μm.

13. The triboelectric generating device of claim 1 , wherein the triboelectric generating device further comprises a second charging layer formed on the second electrode, the second charging layer comprises a second ferroelectric polymer matrix, and the first charging layer and the second charging layer are arranged such that an interface between the first charging layer and the second charging layer forms a frictional interface.

14. The triboelectric generating device of claim 13 , wherein the second charging layer further comprises ferroelectric inorganic particles dispersed in the second ferroelectric polymer matrix.

15. The triboelectric generating device of claim 13 , wherein the second charging layer is a laminate of at least two sub-charging layers which have a different content of the inorganic particles from each other, and in this case, a sub-charging layer having a lowest content of the inorganic particles is disposed so as to form the frictional interface.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 2, 2017
From: PARK, YOUNG-JUN; KIM, SANG-WOO; PARK, YUN-KWON; SEUNG, WAN CHUL; YOON, HONG-JOON; LEE, KEUN YOUNG; LEE, JEONG HWAN; LEE, JU-HYUCK
To: SAMSUNG ELECTRONICS CO., LTD.; RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
Reel/Frame 042573/0520 →
Priority Claims (1)
KR 10-2014-0172379 · Dec 3, 2014 · national
Continuity (1)
Related Publication 20180013359A1 · Jan 11, 2018