IP Library Granted Patent US 10,469,032
Granted Patent B2
US 10,469,032 · App. 15/979,899 · Granted Nov 5, 2019

Power amplifier circuit

Inventor: Hisanori Namie (Kyoto, JP)
Assignee: MURATA MANUFACTURING CO., LTD.
H03F1/0211H03F3/195H03F3/245H03G1/0029H03F2200/18H03F2201/3215H03F2203/21145H03G1/0082
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Quick Facts
Patent No.
US 10,469,032
App. No.
15/979,899
Granted
Nov 5, 2019
Kind
B2
Abstract

A power amplifier circuit includes a transistor, a bias current source, and an adjustment circuit. The transistor amplifies an RF signal when supplied with a variable power supply voltage. The bias current source supplies a bias current to the base of the transistor through a first current path. The adjustment circuit increases a current flowing from the bias current source to an input terminal of a matching circuit through a second current path as the variable power supply voltage decreases, and decreases the bias current flowing from the bias current source to the base of the transistor through the first current path as the current flowing from the bias current source to the input terminal through the second current path increases.

Claims (59)

1. A power amplifier circuit comprising:

a matching circuit having an input terminal and an output terminal;

a transistor having a base connected to the output terminal, and a collector supplied with a variable power supply voltage greater than or equal to a first voltage and less than or equal to a second voltage, the transistor being configured to amplify a radio frequency signal input to the base of the transistor via the matching circuit;

a bias current source configured to supply a bias current to the base of the transistor through a first current path; and

an adjustment circuit configured to adjust the bias current supplied to the base of the transistor in accordance with the variable power supply voltage,

wherein when the variable power supply voltage is greater than or equal to the first voltage and less than or equal to a third voltage, the third voltage being greater than the first voltage and less than the second voltage, the adjustment circuit is configured to:

increase a current flowing from the bias current source to the input terminal through a second current path as the variable power supply voltage decreases, and

decrease the bias current flowing from the bias current source to the base of the transistor through the first current path as the current flowing from the bias current source to the input terminal through the second current path increases.

2. The power amplifier circuit according to claim 1 , wherein:

the adjustment circuit includes a heterojunction bipolar transistor, a first resistor element, a second resistor element, and a third resistor element,

the heterojunction bipolar transistor has an emitter connected to the first current path via the first resistor element,

the heterojunction bipolar transistor has a base connected to the bias current source via the second resistor element,

the heterojunction bipolar transistor has a collector connected to the input terminal via the third resistor element, and

the second current path is a path through which current flows from the bias current source to the input terminal via the second resistor element, the base and collector of the heterojunction bipolar transistor, and the third resistor element.

3. The power amplifier circuit according to claim 2 , wherein:

the bias current source includes a first diode, a second diode, and an emitter follower transistor,

the first diode has an anode connected to a power supply terminal,

the first diode has a cathode connected to an anode of the second diode,

the second diode has a cathode connected to ground,

the emitter follower transistor has a base connected to the anode of the first diode and also connected to the second resistor element via the second current path, and

the emitter follower transistor has an emitter connected to the base of the transistor via the first current path.

4. The power amplifier circuit according to claim 2 , further comprising:

a first capacitor element connected between the base and collector of the heterojunction bipolar transistor.

5. The power amplifier circuit according to claim 3 , further comprising:

a first capacitor element connected between the base and collector of the heterojunction bipolar transistor.

6. The power amplifier circuit according to claim 2 , further comprising:

a second capacitor element connected in parallel with the third resistor element.

7. The power amplifier circuit according to claim 3 , further comprising:

a second capacitor element connected in parallel with the third resistor element.

8. The power amplifier circuit according to claim 4 , further comprising:

a second capacitor element connected in parallel with the third resistor element.

9. The power amplifier circuit according to claim 5 , further comprising:

a second capacitor element connected in parallel with the third resistor element.

10. The power amplifier circuit according to claim 2 , wherein:

the third resistor element has a first end connected to the input terminal,

the third resistor element has a second end connected to the collector of the heterojunction bipolar transistor,

the first resistor element has a first end connected to the first current path,

the first resistor element has a second end connected to the emitter of the heterojunction bipolar transistor, and

the power amplifier circuit further comprises a third capacitor element connected between the first end of the third resistor element and the second end of the first resistor element.

11. The power amplifier circuit according to claim 3 , wherein:

the third resistor element has a first end connected to the input terminal,

the third resistor element has a second end connected to the collector of the heterojunction bipolar transistor,

the first resistor element has a first end connected to the first current path,

the first resistor element has a second end connected to the emitter of the heterojunction bipolar transistor, and

the power amplifier circuit further comprises a third capacitor element connected between the first end of the third resistor element and the second end of the first resistor element.

12. The power amplifier circuit according to claim 4 , wherein:

the third resistor element has a first end connected to the input terminal,

the third resistor element has a second end connected to the collector of the heterojunction bipolar transistor,

the first resistor element has a first end connected to the first current path,

the first resistor element has a second end connected to the emitter of the heterojunction bipolar transistor, and

the power amplifier circuit further comprises a third capacitor element connected between the first end of the third resistor element and the second end of the first resistor element.

13. The power amplifier circuit according to claim 5 , wherein:

the third resistor element has a first end connected to the input terminal,

the third resistor element has a second end connected to the collector of the heterojunction bipolar transistor,

the first resistor element has a first end connected to the first current path,

the first resistor element has a second end connected to the emitter of the heterojunction bipolar transistor, and

the power amplifier circuit further comprises a third capacitor element connected between the first end of the third resistor element and the second end of the first resistor element.

14. The power amplifier circuit according to claim 1 , wherein:

the variable power supply voltage is supplied by an envelope tracking power supply.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 15, 2018
From: NAMIE, HISANORI
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 045808/0599 →
Priority Claims (1)
JP 2017-097615 · May 16, 2017 · national
Continuity (1)
Related Publication 20180375474A1 · Dec 27, 2018