High aspect ratio nanostructures and methods of preparation
Metal nanomaterials and nanostructures may be formed via shearing force in the presence of a reactant.
1. A process for preparing a nanostructure comprising:
adding a metal to a liquid reaction solution;
forming a metal oxide on a surface of the metal;
shearing off metal oxide particles from the surface of the metal;
allowing the sheared metal oxide particles to self-assemble into nanomaterials; and
casting the self-assembled nanomaterials on a substrate to form the nanostructure.
2. The process of claim 1 , wherein adding the metal comprises adding gallium or alloys thereof.
3. The process of claim 1 , wherein adding the metal comprises adding the metal in a liquid state.
4. The process of claim 1 , wherein forming a metal oxide comprises forming a metal oxide having the following formula:
M n O X C Y H Z
wherein M is a metal and n, x, y, and z are integers.
5. The process of claim 4 , wherein M is gallium.
6. The process of claim 1 , wherein the reaction solution comprises acetic acid.
7. The process of claim 6 , wherein the sheared metal oxide particles comprise an adsorbed acetate layer.
8. The process of claim 1 , wherein the reaction solution comprises an acetic acid solution having a concentration of acetic acid in the range of 1 percent to 10 percent by volume.
9. The process of claim 8 , wherein the reaction solution comprises an acetic acid solution having a concentration of acetic acid in the range of 1 percent to 5 percent by volume.
10. The process of claim 1 , wherein forming the metal oxide on the surface comprises allowing the metal to react with the reaction solution for 2 to 24 hours prior to shearing.
11. The process of claim 1 , wherein forming the metal oxide on the metal surface takes place at a temperature of about 90° C. to about 150° C.
12. The process of claim 1 , wherein forming the metal oxide on the metal surface takes place at a temperature of about 20° C. to about 100° C.
13. The process of claim 12 , wherein forming the metal oxide on the metal surface takes place at a temperature of about 20° C. to about 30° C.
14. The process of claim 1 , wherein shearing off metal oxide particles comprises stirring the metal oxide in the reaction solution with an apparatus that creates centrifugal shear force.
15. The process of claim 1 , wherein the self-assembled nanomaterials have a thickness in the range of about 5 nanometers to about 5 microns.
16. The process of claim 1 , wherein the self-assembled nanomaterials have a thickness in the range of about 150 nanometers to about 400 nanometers.
17. The process of claim 1 , wherein the nanostructures have a high aspect ratio of length to thickness that is greater than about 1000 to 1.
18. The process of claim 1 , wherein the substrate comprises silicon.
19. The process of claim 1 , further comprising subjecting the nanostructure to post-assembly modification.