Multilayer ceramic capacitor and manufacturing method of multilayer ceramic capacitor
A multilayer ceramic capacitor includes: a multilayer chip in which each of dielectric layers and each of internal electrode layers are alternately stacked and are alternately exposed to two edge faces thereof; and external electrodes formed on the two edge faces; wherein: the external electrodes have a structure in which a plated layer is formed on a ground layer whose main component is a metal or an alloy, a thermal expansion coefficient of the metal being larger than that of a main ceramic component of the dielectric layer, the ground layer including a ceramic additive; outermost layers of the multilayer chip are cover layers whose main component is a main component of the dielectric layer; and thermal expansion coefficients satisfy a relationship of, the main component of the ground layer>the main component of the cover layers>the ceramic additive.
1. A multilayer ceramic capacitor comprising:
a multilayer chip having a parallelepiped shape in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked and are alternately exposed to two edge faces of the multilayer chip, a main component of the plurality of dielectric layers being a ceramic; and
a pair of external electrodes that are formed on the two edge faces;
wherein:
the pair of external electrodes each have a structure in which a plated layer is formed on a ground layer of which a main component is a metal or an alloy of the metal, a thermal expansion coefficient of the metal being larger than that of a main ceramic component of the dielectric layer, the ground layer including a ceramic additive and directly contacting the two edge faces, the ceramic additive including a ceramic additive component selected from the group consisting of CaZrO 3 (calcium zirconate), 3Al 2 O 3 .2SiO 2 (mullite), 2MgO.2Al 2 O 3 .5SiO 2 (cordierite), SiC (silicon carbide), Si 3 N 4 (silicon nitride), BN (boron nitride), and AlN (aluminum nitride);
outermost layers of the multilayer chip in a stack direction of the multilayer chip are cover layers of which a main component is a main component of the dielectric layer; and
thermal expansion coefficients of the main component of the ground layer, the ceramic additive component, and the main component of the cover layers satisfy a relationship of, the main component of the ground layer>the main component of the cover layers>the ceramic additive component,
wherein the ceramic additive component is added to the ground layer in a manner that a thermal expansion coefficient of the ground layer, α c , is within ±20% of a thermal expansion coefficient of the cover layer, where α c =(α a E a V a +α m E m V m )/(E a V a +E m V m ):
α a : the thermal expansion coefficient of the ceramic additive component
E a : Young's modulus of the ceramic additive component of the ground layer
V a : a volume fraction of the ceramic additive component of the ground layer
α m : the thermal expansion coefficient of the main component of the ground layer
E m : Young's modulus of the main component of the ground layer
V m : a volume fraction of the main component of the ground layer.
2. The multilayer ceramic capacitor as claimed in claim 1 , wherein a main component of the ground layer is Ni.
3. The multilayer ceramic capacitor as claimed in claim 1 , wherein the ceramic additive component is an oxide.
4. The multilayer ceramic capacitor as claimed in claim 1 , wherein a main component of the dielectric layer is barium titanate.
5. A manufacturing method of a ceramic multilayer capacitor comprising:
forming a ceramic multilayer structure having a parallelepiped shape in which each of a plurality of ceramic dielectric green sheets and each of a plurality of conductive pastes for forming an internal electrode are alternately stacked and are alternately exposed to two edge faces of the ceramic multilayer structure, outermost layers of the ceramic multilayer structure being cover sheets of which a main component is a main component of the ceramic dielectric green sheet;
coating a metal paste from the two edge faces to a side face of the ceramic multilayer structure to form a ground layer, the metal paste including a metal powder and a ceramic additive, a main component of the metal powder being a metal or an alloy of the metal, a thermal expansion coefficient of the metal being larger that of a main ceramic component of the ceramic dielectric green sheet, wherein the metal paste directly contacts the two edge faces, and the ceramic additive includes a ceramic additive component selected from the group consisting of CaZrO 3 (calcium zirconate), 3Al 2 O 3 .2SiO 2 (mullite), 2MgO.2Al 2 O 3 .5SiO 2 (cordierite), SiC (silicon carbide), Si 3 N 4 (silicon nitride), BN (boron nitride), and AlN (aluminum nitride); and
sintering the ceramic multilayer structure after the coating,
wherein thermal expansion coefficients of the main component of the metal powder, the ceramic additive component, and the main ceramic component of the cover layers satisfy a relationship of, the main component of the metal powder>the main ceramic component>the ceramic additive component,
wherein the ceramic additive component is added to the metal paste in a manner that a thermal expansion coefficient of the ground layer, α c , is within ±20% of a thermal expansion coefficient of the cover layer, where α c =(α a E a V a +α m E m V m )/(E a V a +E m V m ):
α a : the thermal expansion coefficient of the ceramic additive component
E a : Young's modulus of the ceramic additive component of the ground layer
V a : a volume fraction of the ceramic additive component of the ground layer
α m : the thermal expansion coefficient of the main component of the ground layer
E m : Young's modulus of the main component of the ground layer
V m : a volume fraction of the main component of the ground layer.