Doped and undoped vanadium oxides for low-k spacer applications
A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film. Methods comprise depositing a low-k dielectric film optionally sandwiched by a silicon nitride or oxide film to form a spacer adjacent to a gate electrode of a microelectronic device on a semiconductor substrate, wherein the low-k dielectric film comprises a vanadium-containing film.
1. A microelectronic device on a semiconductor substrate, the microelectronic device comprising:
a gate electrode with laterally opposite sidewalls; and
a plurality of spacers, each spacer adjacent to a sidewall of the gate electrode, the spacers comprising a low-k dielectric film directly adjacent to the gate electrode, the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped.
2. The microelectronic device of claim 1 , wherein the low-k dielectric film has a dielectric constant (k) in the range of 1 to less than 8.
3. The microelectronic device of claim 1 , wherein the species of vanadium oxide are according to VO x , wherein x is in the range of 1-3.
4. The microelectronic device of claim 1 , wherein the low-k dielectric film comprises one or more dopants in an amount in the range of 0 to 50 atomic % of the low-k dielectric film.
5. A microelectronic device on a semiconductor substrate, the microelectronic device comprising:
a gate electrode with laterally opposite sidewalls; and
a plurality of spacers, each spacer adjacent to a sidewall of the gate electrode, the spacers comprising a low-k dielectric film, the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped,
the spacer further comprising first and second films of silicon nitride or silicon oxide adjacent to the low-k dielectric film.
6. The microelectronic device of claim 5 , wherein the low-k dielectric film has a dielectric constant (k) in the range of 1 to less than 8.
7. The microelectronic device of claim 5 , wherein the species of vanadium oxide are according to VO x , wherein x is in the range of 1-3.
8. The microelectronic device of claim 5 , wherein the low-k dielectric film comprises one or more dopants in an amount in the range of 0 to 50 atomic % of the low-k dielectric film.
9. A microelectronic device on a semiconductor substrate, the microelectronic device comprising:
a gate electrode with laterally opposite sidewalls; and
a plurality of spacers, each spacer adjacent to a sidewall of the gate electrode, the spacers comprising a low-k dielectric film, the low-k dielectric film comprising one or more species of vanadium oxide, which is doped with one or more of the following dopants: carbon (C), nitrogen (N), silicon (Si), boron (B), or fluorine (F).
10. The microelectronic device of claim 9 , wherein the low-k dielectric film has a dielectric constant (k) in the range of 1 to less than 8.
11. The microelectronic device of claim 9 , wherein the species of vanadium oxide are according to VO x , wherein x is in the range of 1-3.
12. The microelectronic device of claim 9 , wherein the low-k dielectric film comprises one or more dopants in an amount in the range of 0 to 50 atomic % of the low-k dielectric film.
13. The microelectronic device of claim 9 , wherein the one or more species of vanadium oxide is doped with carbon (C).
14. The microelectronic device of claim 9 , wherein the one or more species of vanadium oxide is doped with nitrogen (N).
15. The microelectronic device of claim 9 , wherein the one or more species of vanadium oxide is doped with silicon (Si).
16. The microelectronic device of claim 9 , wherein the one or more species of vanadium oxide is doped with boron (B).
17. The microelectronic device of claim 9 , wherein the one or more species of vanadium oxide is doped with fluorine (F).