Patterning method
A patterning method includes the following steps. A hard mask layer is formed on a substrate. Mandrels are formed on the hard mask layer. Mask patterns are formed on the mandrels. Each of the mask patterns is formed on one of the mandrels. Spacers are formed on the hard mask layer. Each of the spacers is formed on a sidewall of one of the mandrels and on a sidewall of one of the mask patterns. A cover layer covering the hard mask layer, the spacers and the mask patterns is formed. A planarization process is performed to remove the cover layer on the mask patterns and the spacer and remove the mask patterns. A part of the cover layer remains between the spacers after the planarization process. The mandrels and the cover layer are removed after the planarization process.
1. A patterning method, comprising:
forming a hard mask layer on a substrate;
forming mandrels on the hard mask layer;
forming mask patterns on the mandrels, wherein each of the mask patterns is formed on one of the mandrels;
forming spacers on the hard mask layer, wherein each of the spacers is formed on a sidewall of one of the mandrels and on a sidewall of one of the mask patterns;
forming a cover layer covering the hard mask layer, the spacers and the mask patterns, wherein a material of the mandrels is identical to a material of the cover layer;
performing a planarization process to remove the cover layer on the mask patterns and the spacers and remove the mask patterns, wherein a part of the cover layer remains between the spacers after the planarization process; and
removing the mandrels and the cover layer after the planarization process.
2. The patterning method according to claim 1 , wherein the step of forming the spacers comprises:
forming a spacer material layer conformally on the hard mask layer, the mandrels, and the mask patterns, wherein the mandrels and the mask patterns are covered by the spacer material layer; and
performing an etching back process to the spacer material layer for forming the spacers.
3. The patterning method according to claim 2 , wherein a part of the hard mask layer is exposed by the etching back process, and the hard mask layer is not etched by the etching back process.
4. The patterning method according to claim 2 , wherein the spacer material layer overlapping the mask patterns in a thickness direction of the hard mask layer is removed by the etching back process.
5. The patterning method according to claim 1 , wherein a top surface of the cover layer is higher than a top surface of the spacers and a top surface of the mask patterns before the planarization process.
6. The patterning method according to claim 5 , wherein the top surface of the cover layer, the top surface of the spacers, and a top surface of the mandrels are coplanar after the planarization process.
7. The patterning method according to claim 1 , wherein the planarization process comprises an etching back process.
8. The patterning method according to claim 7 , wherein a top portion of each of the spacers is removed by the etching back process, and an etching rate of the cover layer in the etching back process is substantially equal to an etching rate of the spacers in the etching back process.
9. The patterning method according to claim 1 , further comprising:
transferring the pattern of at least a part of the spacers to the hard mask layer after the step of removing the mandrels and the cover layer.
10. The patterning method according to claim 9 , wherein a first region and a second region adjacent to the first region are defined on the substrate, and the mandrels, the spacers, and the cover layer are formed on the first region and the second region.
11. The patterning method according to claim 10 , further comprising:
forming a patterned mask layer covering the spacers on the second region, wherein the patterned mask layer covers the spacers on the second region during the step of transferring the pattern of at least a part of the spacers to the hard mask layer.
12. The patterning method according to claim 11 , wherein the patterned mask layer is formed after the step of removing the mandrels and the cover layer.
13. The patterning method according to claim 11 , wherein the patterned mask layer is formed after the planarization process and before the step of removing the mandrels and the cover layer.