Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
There is provided a technology includes: heating a heat insulating plate, which is held by a substrate holder configured to hold a substrate, to a processing temperature, at which the substrate is processed, by an electromagnetic wave supplied from a heating device, and measuring a temperature change of the heat insulating plate until the heat insulating plate reaches the processing temperature; heating the substrate, to the processing temperature and measuring a temperature change of the substrate until the substrate reaches the processing temperature; obtaining a correlation between the temperature change of the heat insulating plate and the temperature change of the substrate and heating the substrate by controlling the heating device based on the temperature of the heat insulating plate and the correlation.
1. A method of manufacturing a semiconductor device, the method comprising:
heating a heat insulating plate, which is held by a substrate holder configured to hold a substrate, to a processing temperature, at which the substrate is processed, by an electromagnetic wave supplied from a heating device, and measuring a temperature change of the heat insulating plate by a non-contact type thermometer until the heat insulating plate reaches the processing temperature;
heating the substrate, which is held by the substrate holder, to the processing temperature by the heating device, and measuring a temperature change of the substrate by the non-contact type thermometer until the substrate reaches the processing temperature;
obtaining a correlation between the temperature change of the heat insulating plate and the temperature change of the substrate according to a measurement result of the temperature change of the heat insulating plate and a measurement result of the temperature change of the substrate; and
heating the substrate by controlling the heating device based on the temperature of the heat insulating plate measured by the non-contact type thermometer and the correlation.
2. The method according to claim 1 , wherein, in the heating of the substrate, the heating device is controlled in a combination of pulse control for intermittently supplying the electromagnetic wave in a period of heating the substrate and increasing the temperature and power limit control for linearly controlling a supply output of the electromagnetic wave.
3. The method according to claim 1 , wherein, in the heating of the substrate, the heating device is controlled in a combination of pulse control for intermittently supplying the electromagnetic wave and feedback control for controlling the heating device based on the correlation, in a period of being maintained at the processing temperature.
4. The method according to claim 1 , wherein, in the measuring of the temperature change of the heat insulating plate, the heat insulating plate is held above or below the substrate, and the temperature change is measured.
5. The method according to claim 1 , wherein, in the measuring of the temperature change of the substrate, the substrate, of which the temperature change is measured, is held in an upper region of a substrate holding region of the substrate holder.
6. The method according to claim 5 , wherein, in the measuring of the temperature change of the substrate, the substrate, of which the temperature change is measured, is further held in a middle region of the substrate holding region of the substrate holder.
7. The method according to claim 6 , wherein, in the measuring of the temperature change of the substrate, the substrate, of which the temperature change is measured, is further held in a bottom region of the substrate holding region of the substrate holder.
8. The method according to claim 1 , wherein at least two electromagnetic wave oscillators configured to oscillate the electromagnetic wave are provided in the heating device, and the same control is performed based on a result measured by the non-contact type thermometer.
9. The method according to claim 1 , wherein the non-contact type thermometer is a radiation thermometer.
10. The method according to claim 1 , wherein two or more heat insulating plates are held so as to sandwich at least the substrate therebetween.
11. The method according to claim 1 , wherein, in the measuring of the temperature change of the heat insulating plate, two or more heat insulating plates are held so as to sandwich at least the substrate therebetween, and the temperature is measured by the non-contact type thermometer.
12. The method according to claim 1 , wherein, in the measuring of the temperature change of the substrate, the substrate is held so as to be sandwiched by at least two or more heat insulating plates, and the temperature is measured by the non-contact type thermometer.
13. The method according to claim 12 , wherein, in the heating of the substrate, the substrate is held so as to be sandwiched by at least two or more heat insulating plates, and is heated by the heating device.