IP Library Granted Patent US 10,475,820
Granted Patent B2
US 10,475,820 · App. 16/143,970 · Granted Nov 12, 2019

Peeling method, display device, module, and electronic device

Inventors: Junpei Yanaka (Tochigi, JP); Kayo Kumakura (Tochigi, JP); Masataka Sato (Tochigi, JP); Satoru Idojiri (Tochigi, JP); Kensuke Yoshizumi (Isehara, JP); Mari Tateishi (Ebina, JP); Natsuko Takase (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/1225H01L23/293H01L27/124H01L27/1266H01L27/3262H01L51/003H01L2227/323
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Quick Facts
Patent No.
US 10,475,820
App. No.
16/143,970
Granted
Nov 12, 2019
Kind
B2
Abstract

To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

Claims (59)

1. A display device comprising:

a resin layer comprising an opening;

an insulating layer over the resin layer and comprising an opening;

a transistor comprising an oxide semiconductor in a channel formation region over the insulating layer;

a conductive layer over the insulating layer; and

a display element electrically connected to the transistor,

wherein the conductive layer overlaps with the opening of the insulating layer and the opening of the resin layer, and

wherein at least part of the conductive layer is exposed in the opening of the resin layer.

2. The display device according to claim 1 , wherein the resin layer comprises polyimide.

3. The display device according to claim 1 , wherein a thickness of the resin layer is greater than or equal to 0.1 μm and less than or equal to 3 μm.

4. The display device according to claim 1 , wherein the conductive layer comprises an oxide conductive layer.

5. The display device according to claim 1 , wherein the oxide semiconductor of the transistor and the conductive layer comprise the same metal element.

6. The display device according to claim 1 , wherein an exposed surface of the resin layer is positioned on an inner side than an exposed surface of the conductive layer.

7. A module comprising:

the display device according to claim 1 ; and

a circuit board,

wherein the circuit board is electrically connected to the conductive layer through the opening of the resin layer.

8. An electronic device comprising:

the module according to claim 7 ; and

at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.

9. The display device according to claim 1 , wherein an exposed surface of the resin layer is positioned on an outer side than an exposed surface of the conductive layer.

10. A display device comprising:

a resin layer comprising an opening;

an insulating layer over the resin layer and comprising an opening;

a transistor comprising an oxide semiconductor in a channel formation region over the insulating layer;

a conductive layer over the insulating layer; and

a display element electrically connected to the transistor,

wherein the insulating layer covers a periphery of the opening of the resin layer,

wherein the conductive layer overlaps with the opening of the insulating layer and the opening of the resin layer, and

wherein at least part of the conductive layer is exposed in the opening of the resin layer.

11. The display device according to claim 10 , wherein the resin layer comprises polyimide.

12. The display device according to claim 10 , wherein a thickness of the resin layer is greater than or equal to 0.1 μm and less than or equal to 3 μm.

13. The display device according to claim 10 , wherein the conductive layer comprises an oxide conductive layer.

14. The display device according to claim 10 , wherein the oxide semiconductor of the transistor and the conductive layer comprise the same metal element.

15. The display device according to claim 10 , wherein an exposed surface of the resin layer is positioned on an inner side than an exposed surface of the conductive layer.

16. The display device according to claim 10 , wherein an exposed surface of the resin layer is positioned on an outer side than an exposed surface of the conductive layer.

17. A module comprising:

the display device according to claim 10 ; and

a circuit board,

wherein the circuit board is electrically connected to the conductive layer through the opening of the resin layer.

18. An electronic device comprising:

the module according to claim 17 ; and

at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.

19. A display module comprising:

a circuit board;

a resin layer comprising an opening;

an insulating layer over the resin layer and comprising an opening;

a transistor comprising an oxide semiconductor in a channel formation region over the insulating layer;

a conductive layer over the insulating layer; and

a display element electrically connected to the transistor,

wherein the conductive layer overlaps with the opening of the insulating layer and the opening of the resin layer,

wherein the circuit board overlaps with the conductive layer and the opening of the resin layer, and

wherein the circuit board is electrically connected to the conductive layer through the opening of the resin layer.

20. The display module according to claim 19 , wherein the resin layer comprises polyimide.

21. The display module according to claim 19 , wherein a thickness of the resin layer is greater than or equal to 0.1 μm and less than or equal to 3 μm.

22. The display module according to claim 19 , wherein the conductive layer comprises an oxide conductive layer.

23. The display module according to claim 19 , wherein the oxide semiconductor of the transistor and the conductive layer comprise the same metal element.

24. The display device according to claim 19 , wherein a surface of the circuit board side of the resin layer is positioned on an inner side than a surface of the circuit board side of the conductive layer.

25. The display device according to claim 19 , wherein a surface of the circuit board side of the resin layer is positioned on an outer side than a surface of the circuit board side of the conductive layer.

Priority Claims (2)
JP 2016-099426 · May 18, 2016 · national
JP 2016-099428 · May 18, 2016 · national
Continuity (2)
Division 15596412 · May 16, 2017
Related Publication 20190035820A1 · Jan 31, 2019