IP Library › Granted Patent US 10,482,914
Granted Patent B2
US 10,482,914 · App. 15/952,506 · Granted Nov 19, 2019

Materials for near field transducers and near field transducers containing same

Inventors: Yuhang Cheng (Edina, MN); Tong Zhao (Eden Prairie, MN); Michael C. Kautzky (Eagan, MN); Ed F. Rejda (Bloomington, MN); Kurt W. Wierman (Eden Prairie, MN); Scott Franzen (Savage, MN); Sethuraman Jayashankar (Excelsior, MN); Sarbeswar Sahoo (Shakopee, MN); Jie Gong (Eden Prairie, MN); Michael Allen Seigler (Eden Prairie, MN)
Assignee: Seagate Technology LLC
G11B13/08C01F7/00C01G5/00C22C5/02C22C5/06C22C9/02C22C9/08C22C11/04C22C13/00C22C18/02C22C19/03C22C20/00C22C21/00C22C21/003C22C21/02C22C21/10C22C22/00C22C27/00C22C27/02C22C27/025C22C27/06C22C38/06C23C14/5833G11B5/314G11B5/3106G11B5/3163G11B5/4866G11B5/6088G11B7/1387G11B7/24059B32B15/01B32B15/018C22C5/04C22C5/10C22C9/00C22C9/04C22C9/05C22C9/06C22C9/10C22C19/07C22C21/06C22C24/00C22C28/00C22C30/02G11B2005/0021
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Quick Facts
Patent No.
US 10,482,914
App. No.
15/952,506
Granted
Nov 19, 2019
Kind
B2
Abstract

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Claims (52)

1. A device comprising:

a near field transducer, the near field transducer comprising gold (Au) and at least one other secondary atom present in an amount from 0.01 atomic percent to about 5 atomic percent, the at least one other secondary atom selected from:

boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof;

erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and

barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

2. The device according to claim 1 , wherein the at least one secondary atom is selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof.

3. The device according to claim 1 , wherein the at least one secondary atom is selected from: boron (B), bismuth (Bi), sulfur (S), silicon (Si), indium (In), or combinations thereof.

4. The device according to claim 1 , wherein the at least one secondary atom is selected from: boron (B), sulfur (S), silicon (Si), or combinations thereof.

5. The device according to claim 1 , wherein the at least one secondary atom is selected from indium (In).

6. The device according to claim 1 , wherein the near field transducer comprises at least two secondary atoms.

7. The device according to claim 6 , wherein a first secondary atom is selected from:

boron (B), bismuth (Bi), sulfur (S), silicon (Si), carbon (C), tellurium (Te), or combinations thereof,

holmium (Ho), lutetium (Lu), praseodymium (Pr), uranium (U), or combinations thereof; and

cesium (Cs), dysprosium (Dy), europium (Eu), gadolinium (Gd), germanium (Ge), rubidium (Rb), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), or combinations thereof; and

a second secondary atom is selected from:

indium (In), tin (Sn), manganese (Mn), or some combination thereof; and

erbium (Er), scandium (Sc), zinc (Zn), or some combination thereof.

8. The device according to claim 1 , wherein the near field transducer comprises about 0.1 atomic percent to about 5 atomic percent of the at least one secondary atom.

9. The device according to claim 1 further comprising an energy source.

10. A device comprising:

a light source;

a waveguide; and

a near field transducer, the near field transducer comprising gold (Au) and at least one other secondary atom present in an amount from 0.01 atomic percent to about 5 atomic percent, the at least one other secondary atom selected from:

boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof;

erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and

barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof,

wherein the light source, waveguide and near field transducer are configured to transmit light from the light source to the waveguide and finally the near field transducer.

11. The device according to claim 10 , wherein the at least one secondary atom is selected from: boron (B), bismuth (Bi), sulfur (S), silicon (Si), indium (In), or combinations thereof.

12. The device according to claim 10 , wherein the at least one secondary atom is selected from: boron (B), sulfur (S), silicon (Si), or combinations thereof.

13. The device according to claim 10 , wherein the at least one secondary atom is selected from indium (In).

14. The device according to claim 10 , wherein the near field transducer comprises at least two secondary atoms.

15. The device according to claim 14 , wherein a first secondary atom is selected from:

boron (B), bismuth (Bi), sulfur (S), silicon (Si), carbon (C), tellurium (Te), or combinations thereof,

holmium (Ho), lutetium (Lu), praseodymium (Pr), uranium (U), or combinations thereof; and

cesium (Cs), dysprosium (Dy), europium (Eu), gadolinium (Gd), germanium (Ge), rubidium (Rb), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), or combinations thereof; and

a second secondary atom is selected from:

indium (In), tin (Sn), manganese (Mn), or some combination thereof; and

erbium (Er), scandium (Sc), zinc (Zn), or some combination thereof.

16. The device according to claim 10 , wherein the near field transducer comprises about 0.1 atomic percent to about 5 atomic percent of the at least one secondary atom.

17. A disc drive comprising:

at least one actuator arm having a first and a second end;

at least one head, wherein each arm has a head at the first end thereof and wherein each head comprises:

a light source;

a near field transducer, the near field transducer comprising gold (Au) and at least one other secondary atom present in an amount from 0.01 atomic percent to about 5 atomic percent, the at least one other secondary atom selected from:

boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof;

erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and

barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof;

a magnetic reader; and

a magnetic writer,

wherein the light source and the near field transducer are configured to transmit light from the light source to the near field transducer in order to assist the magnetic writer with writing.

18. The disc drive according to claim 17 , wherein the at least one secondary atom is selected from: boron (B), bismuth (Bi), sulfur (S), silicon (Si), indium (In), or combinations thereof.

19. The disc drive according to claim 17 , wherein the near field transducer comprises about 0.1 atomic percent to about 5 atomic percent of the at least one secondary atom.

Continuity (8)
Continuation 14313651 · Jun 24, 2014
Provisional Application 61838405 · Jun 24, 2013
Provisional Application 61838393 · Jun 24, 2013
Provisional Application 61897303 · Oct 30, 2013
Provisional Application 61838398 · Jun 24, 2013
Provisional Application 61838626 · Jun 24, 2013
Provisional Application 61984915 · Apr 28, 2014
Related Publication 20180366153A1 · Dec 20, 2018