Reflector, vertical cavity light-emitting device, and method of producing the same

1. A vertical cavity light-emitting device comprising:

a semiconductor substrate having a hexagonal crystal structure;

a line mask extending linearly along at least a [11-20] direction, a [-12-10] direction, and a [2-1-10] direction on a c-plane of the semiconductor substrate;

a first reflector formed on an exposed region exposed from the line mask on the c-plane of the semiconductor substrate, the first reflector comprising a high refractive index semiconductor film and a low refractive index semiconductor film having a refractive index smaller than that of the high refractive index semiconductor film, the high refractive index semiconductor film and the low refractive index semiconductor film being alternately layered;

a light-emitting structure layer formed on the first reflector; and

a second reflector disposed on the light-emitting structure layer so as to be opposed to the first reflector.

2. The vertical cavity light-emitting device according to claim 1 , wherein:

the line mask includes a pair of line parts extending parallel to each other along one of the [11-20] direction and directions equivalent to the [11-20] direction, and

the first reflector is formed on the exposed region of the semiconductor substrate between the pair of line parts.

3. The vertical cavity light-emitting device according to claim 2 , wherein the first reflector and the light-emitting structure layer are formed in a region surrounded by a (11-22) plane and a plane equivalent to the (11-22) plane including side edges of the pair of line parts.

4. The vertical cavity light-emitting device according to claim 1 , wherein the line mask is formed so as to surround the exposed region on the c-plane of the semiconductor substrate.

5. The vertical cavity light-emitting device according to claim 1 , wherein:

the semiconductor substrate is a GaN substrate,

the high refractive index semiconductor film is a GaN film, and the low refractive index semiconductor film is an AlInN film, and

an In composition of the AlInN film is less than 18%.

6. A method of producing the vertical cavity light-emitting device according to claim 1 , comprising:

forming the line mask to extend linearly along at least the [11-20] direction, the [-12-10] direction, and the [2-1-10] direction on the c-plane of the semiconductor substrate having the hexagonal crystal structure;

forming the first reflector by alternately growing the high refractive index semiconductor film and the low refractive index semiconductor film having the refractive index smaller than that of the high refractive index semiconductor film on the exposed region exposed from the line mask on the c-plane of the semiconductor substrate;

growing the light-emitting structure layer on the first reflector; and

forming the second reflector at a position on the light-emitting structure layer that is opposed to the first reflector.

7. The method according to claim 6 , wherein the line mask is formed on the c-plane of the semiconductor such that the line mask includes a pair of line parts extending parallel to each other along one of the [11-20] direction and directions equivalent to the [11-20] direction.

8. The method according to claim 7 , wherein the first reflector is grown in a region surrounded by a (11-22) plane and a plane equivalent to the (11-22) plane including side edges of the pair of line parts.

9. The method according to claim 6 , wherein further comprising forming a recess to divide the light-emitting structure layer into a plurality of light-emitting segments.

10. The method according to claim 6 , wherein:

the semiconductor substrate is a GaN substrate,

the high refractive index semiconductor film is a GaN film, and

the low refractive index semiconductor film is an AlInN film.