IP Library Granted Patent US 10,490,485
Granted Patent B2
US 10,490,485 · App. 16/013,151 · Granted Nov 26, 2019

Semiconductor device

Inventors: Naohisa Okumura (Kanagawa, JP); Yasuhisa Shintoku (Kanagawa, JP); Tetsuya Kurosawa (Kanagawa, JP); Hiroaki Kishi (Kanagawa, JP)
Assignee: KABUSHIKI KAISHA TOSHIBA
H01L23/49503H01L21/4842H01L23/49537H01L23/49541H01L23/49568H01L24/32H01L24/49H01L24/73H01L24/83H01L24/85H01L24/92H01L24/97H01L21/561H01L23/3107H01L24/48H01L2224/29139H01L2224/32245H01L2224/45144H01L2224/45147H01L2224/48091H01L2224/48177H01L2224/48247H01L2224/49171H01L2224/73265H01L2224/92247H01L2224/97H01L2924/1033H01L2924/1306H01L2924/17747
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Quick Facts
Patent No.
US 10,490,485
App. No.
16/013,151
Granted
Nov 26, 2019
Kind
B2
Abstract

A semiconductor device that includes a first die pad, an adhesive, and a second die pad fixed to the top surface of the first die pad via the adhesive. The second die pad includes a body portion and a protrusion portion provided on a side surface of the body portion. A semiconductor chip is fixed to a top surface of the second die pad, and a lead is electrically connected to the semiconductor chip. The semiconductor device further includes a package material that covers the first die pad, the second die pad, the semiconductor chip, and the lead. The first die pad is substantially as thick as the lead.

Claims (38)

1. A semiconductor device comprising:

a first die pad;

a second die pad comprising a metal and disposed on a top surface of the first die pad, the second die pad comprising a body portion and a protrusion portion provided on a side surface of the body portion;

a semiconductor chip disposed on a top surface of the second die pad such that the second die pad is disposed between the semiconductor chip and the first die pad;

a lead electrically connected to the semiconductor chip; and

a package material that covers the first die pad, the second die pad, the semiconductor chip, and at least a portion of the lead, such that the lead protrudes from a lateral surface of the package material,

wherein the protrusion portion is disposed on the first die pad, and

the first die pad comprises the metal.

2. The semiconductor device of claim 1 , wherein at least a portion of the lead is disposed above the first die pad.

3. The semiconductor device of claim 1 , wherein the body portion has a rectangular top surface.

4. The semiconductor device of claim 1 , wherein the metal is copper.

5. The semiconductor device of claim 1 , wherein the second die pad comprises a plurality of protrusion portions, including the protrusion portion, provided on the side surface of the body portion.

6. The semiconductor device of claim 5 , wherein the plurality of protrusion portions are integrally formed with the body portion.

7. The semiconductor device of claim 1 , wherein the body portion has a plurality of side surfaces, including the side surface, and each of the plurality of side surfaces includes at least one protrusion portion.

8. The semiconductor device of claim 7 , wherein each of the plurality of side surfaces includes a respective plurality of protrusion portions.

9. A method of manufacturing a semiconductor device, the method comprising:

providing a first die pad;

disposing a second die pad comprising a metal on a top surface of the first die pad, the second die pad comprising a body portion and a protrusion portion provided on a side surface of the body portion;

disposing a semiconductor chip on a top surface of the second die pad such that the second die pad is disposed between the semiconductor chip and the first die pad;

electrically connecting a lead and the semiconductor chip; and

covering the first die pad, the second die pad, the semiconductor chip, and at least a portion of the lead with a package material such that the lead protrudes from a lateral surface of the package material,

wherein the second die pad comprises a plurality of protrusion portions, including the protrusion portion, provided on the side surface of the body portion, and

the plurality of protrusion portions of the second die pad are integrally formed with the body portion by a process that comprises:

providing a plate that defines a plurality of through holes, the through holes defining at least a portion of a periphery of the second die pad; and

cutting the plate to connect the through holes to form the second die pad.

10. The method of claim 9 , wherein the plate is a metal plate.

11. The method of claim 10 , wherein the plate comprises copper.

12. A semiconductor device comprising:

a first die pad defining a cutout portion;

a second die pad comprising a metal and disposed on a top surface of the first die pad;

a semiconductor chip disposed on a top surface of the second die pad such that the second die pad is disposed between the semiconductor chip and the first die pad;

a lead electrically connected to the semiconductor chip; and

a package material that covers the first die pad, the second die pad, the semiconductor chip, and at least a portion of the lead, such that the lead protrudes from a lateral surface of the package material,

wherein the cutout portion defines a protrusion of the first die pad that extends beyond the second die pad.

13. The semiconductor device of claim 12 , wherein the second die pad extends above the cutout portion.

14. The semiconductor device of claim 13 , wherein the second die pad comprises a body portion and a protrusion portion, and the body portion of the second die pad does not extend above the cutout portion.

15. The semiconductor device of claim 12 , wherein at least a portion of the lead is disposed above the first die pad.

16. The semiconductor device of claim 15 , wherein the at least a portion of the lead is disposed above the cutout portion of the first die pad.

Priority Claims (1)
JP 2016-037102 · Feb 29, 2016 · national
Continuity (2)
Continuation 15252915 · Aug 31, 2016
Related Publication 20180331019A1 · Nov 15, 2018