Display device

1. A display device comprising:

a thin film transistor array panel; and

a color conversion display panel overlapping the thin film transistor array panel,

wherein the color conversion display panel includes:

a substrate;

a color conversion layer positioned between the substrate and the thin film transistor array panel and including a semiconductor nanocrystal;

a transparent layer positioned between the substrate and the thin film transistor array panel; and

a first buffer layer positioned between the color conversion layer and the substrate and between the transparent layer and the substrate, and a second buffer layer positioned between the color conversion layer and the thin film transistor array panel and between the transparent layer and the thin film transistor array panel, and

the first buffer layer and the second buffer layer includes a porous layer, and

both the first buffer layer and the second buffer layer continuously overlap the color conversion layer and the transparent layer.

2. The display device of claim 1 , wherein the first buffer layer and the second buffer layer has a lower refractive index than a refractive index of the color conversion layer and the transparent layer.

3. The display device of claim 1 , further comprising a light filter layer positioned between the second buffer layer and the color conversion layer and between the second buffer layer and the transparent layer.

4. The display device of claim 3 , wherein the light filter layer includes a plurality of layers including at least one high refractive index layer and at least one low refractive index layer that are alternately stacked.

5. The display device of claim 4 , wherein the first buffer layer and the second buffer layer have a different refractive index from a refractive index of the at least one low refractive index layer.

6. The display device of claim 4 , wherein the at least one high refractive index layer is positioned adjacent to the second buffer layer.

7. The display device of claim 4 , wherein the at least one high refractive index layer is positioned at a top end and a bottom end of the light filter layer.

8. The display device of claim 1 , further comprising:

an over-coating layer positioned between the second buffer layer and the thin film transistor array panel; and

a light filter layer positioned between the second buffer layer and the over-coating layer.

9. The display device of claim 1 , wherein a thickness of the first buffer layer and the second buffer layer is 100 nm or more.

10. The display device of claim 9 , wherein the thickness of the first buffer layer and the second buffer layer is 400 nm or more.

11. The display device of claim 1 , wherein a refractive index of the first buffer layer and the second buffer layer is 1.2 to 1.4.

12. The display device of claim 1 , wherein a refractive index of the first buffer layer and the second buffer layer is decreased as a number of pores included in the first buffer layer and the second buffer layer is increased.

13. The display device of claim 1 , wherein

at least one of the first buffer layer and the second buffer layer includes a silicon oxide, and

a refractive index of the first buffer layer and the second buffer layer is decreased as a number of Si—O bonds included in the first buffer layer and the second buffer layer is decreased.

14. A display device comprising:

a thin film transistor array panel; and

a color conversion display panel overlapping the thin film transistor array panel,

wherein the color conversion display panel includes:

a substrate;

a color conversion layer positioned between the substrate and the thin film transistor array panel and including a semiconductor nanocrystal;

a transparent layer positioned between the substrate and the thin film transistor array panel; and

a first buffer layer positioned between the color conversion layer and the substrate and between the transparent layer and the substrate, and a second buffer layer positioned between the color conversion layer and the thin film transistor array panel and between the transparent layer and the thin film transistor array panel, and

total reflection of light is generated at at least one of an interface between the color conversion layer and the first buffer layer and an interface between the color conversion layer and the second buffer layer, and

both the first buffer layer and the second buffer layer continuously overlap the color conversion layer and the transparent layer.

15. The display device of claim 14 , wherein the first buffer layer and the second buffer layer have a refractive index that is lower than a refractive index of the color conversion layer and the transparent layer.

16. The display device of claim 14 , further comprising:

an over-coating layer positioned between the second buffer layer and the thin film transistor array panel; and

a light filter layer positioned at one of between the color conversion layer and the second buffer layer and between the second buffer layer and the over-coating layer.

17. The display device of claim 16 , wherein

the light filter layer includes a plurality of layers including at least one high refractive index layer and at least one low refractive index layer that are alternately stacked, and

the at least one high refractive index layer is positioned at a top end and a bottom end of the light filter layer.

18. The display device of claim 14 , wherein one of the first buffer layer and the second buffer layer includes a porous inorganic material, and the other of the first buffer layer and the second buffer layer includes an organic layer including an inorganic particle.

19. The display device of claim 18 , wherein the inorganic particle includes at least one among hollow silica, a pore derivative, and a silica cluster.

20. The display device of claim 14 , wherein a refractive index of the first buffer layer and the second buffer layer is 1.2 to 1.4.