Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
A component of a plasma processing chamber having a protective liquid layer on a plasma exposed surface of the component The protective liquid layer can be replenished by supplying a liquid to a liquid channel and delivering the liquid through liquid feed passages in the component. The component can be an edge ring which surrounds a semiconductor substrate supported on a substrate support in a plasma processing apparatus wherein plasma is generated and used to process the semiconductor substrate. Alternatively, the protective liquid layer can be cured or cooled sufficiently to form a solid protective layer.
1. A method of forming an in situ protective solid layer on a plasma exposed surface of a component in a plasma processing apparatus configured to process a semiconductor substrate in a vacuum chamber, the method comprising:
heating a plasma compatible solid to form a plasma compatible liquid;
supplying the plasma compatible liquid through liquid feed channels in the component to the plasma exposed surface of the component so as to form a protective liquid layer on the plasma exposed surface of the component; and
cooling the protective liquid layer on the plasma exposed surface of the component thereby forming the protective solid layer.
2. The method of claim 1 , further comprising plasma processing the semiconductor substrate in the vacuum chamber.
3. The method of claim 1 wherein the heating the plasma compatible solid includes heating the plasma compatible solid using a heater of a liquid supply.
4. The method of claim 1 further comprising heating the plasma compatible liquid using a heater of a liquid inflow channel through which the plasma compatible liquid flows.
5. The method of claim 1 further comprising heating the plasma compatible liquid using a heater of an upper edge ring.
6. The method of claim 1 further comprising heating the plasma compatible liquid using a heater of a lower edge ring.
7. The method of claim 1 further comprising heating the plasma compatible liquid using an edge ring assembly.
8. The method of claim 7 wherein the edge ring assembly is heat sunk to a substrate support.
9. The method of claim 1 wherein the component is an edge ring assembly.