Buried word line structure and method of making the same
A method of fabricating a buried word line structure includes providing a substrate with a word line trench therein. Two source/drain doped regions are disposed in the substrate at two sides of the word line trench. Later, a silicon oxide layer is formed to cover the word line trench. A titanium nitride layer is formed to cover the silicon oxide layer. Next, a tilt ion implantation process is performed to implant silicon atoms into the titanium nitride layer to transform part of the titanium nitride layer into a titanium silicon nitride layer. A conductive layer is formed in the word line trench. Subsequently, part of the conductive layer, part of the titanium silicon nitride layer and part of the silicon oxide layer are removed to form a recess. Finally, a cap layer fills in the recess.
1. A method of fabricating a buried word line structure, comprising:
providing a substrate with a word line trench therein, and two source/drain doped regions disposed in the substrate at two sides of the word line trench;
forming a silicon oxide layer covering the word line trench;
forming a titanium nitride layer covering the silicon oxide layer;
performing a tilt ion implantation process to implant silicon atoms into the titanium nitride layer to transform part of the titanium nitride layer into a titanium silicon nitride layer;
forming a conductive layer in the word line trench;
removing part of the conductive layer, part of the titanium silicon nitride layer and part of the silicon oxide layer to form a recess; and
forming a cap layer filling in the recess.
2. The method of fabricating a buried word line structure of claim 1 , wherein a first distance along a vertical direction is between a bottom of each of the source/drain doped regions and a bottom of the word line trench, wherein the vertical direction is perpendicular to a top surface of the substrate.
3. The method of fabricating a buried word line structure of claim 2 , wherein an interface is between the titanium nitride and the titanium silicon nitride layer, the interface is higher than the bottom of each of the source/drain doped regions, a second distance along the vertical direction is between the interface and the bottom of each of the source/drain doped regions, and the second distance is smaller than 0.2 times of the first distance.
4. The method of fabricating a buried word line structure of claim 2 , wherein an interface is between the titanium nitride and the titanium silicon nitride layer, the interface is lower than the bottom of each of the source/drain doped regions, a second distance along the vertical direction is between the interface and the bottom of each of the source/drain doped regions, and the second distance is smaller than 0.2 times of the first distance.
5. The method of fabricating a buried word line structure of claim 2 , wherein an interface is between the titanium nitride and the titanium silicon nitride layer, the interface is aligned with the bottom of each of the source/drain doped regions.
6. A method of fabricating a buried word line structure, comprising:
providing a substrate having a doped region;
forming a first trench in the doped region to separate the doped region into two source/drain doped regions;
forming a mask layer covering a sidewall of the first trench;
etching the substrate to form a second trench by taking the mask layer and the source/drain doped regions as a mask, wherein the first trench and the second trench form a step profile;
after forming the second trench, removing the mask layer entirely;
performing an oxidation process to form a silicon oxide layer covering the first trench and the second trench; and
forming a word line in the first trench and the second trench.
7. The method of fabricating a buried word line structure of claim 6 , wherein the mask layer comprises silicon nitride or titanium nitride.
8. The method of fabricating a buried word line structure of claim 6 , wherein during the oxidation process, the step profile is oxidized into an arced corner.
9. The method of fabricating a buried word line structure of claim 8 , wherein a thickness of the silicon oxide layer contacting the arced corner is greater than a thickness of the silicon oxide layer contacting a bottom of the second trench.