Organic light emitting diode display device and method of fabricating the same

1. An organic light emitting diode display device comprising:

a substrate;

a thin film transistor on the substrate;

a first electrode on the thin film transistor and connected to a drain electrode of the thin film transistor;

an auxiliary electrode on a same layer as the first electrode;

a bank layer covering edges of the first electrode and edges of the auxiliary electrode and having a transmissive hole corresponding to the first electrode and an auxiliary contact hole corresponding to the auxiliary electrode;

a light emitting layer on the first electrode in the transmissive hole;

a residual layer on the auxiliary electrode in the auxiliary contact hole, wherein a thickness of a central portion of the residual layer is smaller than a thickness of an edge portion of the residual layer; and

a second electrode on the light emitting layer and the residual layer,

wherein the thickness of the central portion of the residual layer is smaller than a minimum distance between the first electrode and the second electrode, and

wherein the residual layer exposes a center of the auxiliary electrode.

2. The organic light emitting diode display device of claim 1 , wherein the thickness of the edge portion of the residual layer is more than 1.1 times as thick as the thickness of the central portion of the residual layer.

3. The organic light emitting diode display device of claim 1 , wherein the light emitting layer includes a hole injecting layer, a hole transporting layer, a light emitting material layer, an electron transporting layer and an electron injecting layer, and

wherein the hole injecting layer, the hole transporting layer, the electron transporting layer and the electron injecting layer are disposed over the bank layer.

4. The organic light emitting diode display device of claim 3 , wherein the light emitting material layer is formed on the first electrode corresponding to the transmissive hole of the bank layer.

5. The organic light emitting diode display device of claim 1 , wherein the light emitting layer of a first pixel region includes a hole injecting layer, a hole transporting layer, a first light emitting material layer, a second light emitting material layer, an electron transporting layer and an electron injecting layer, and

wherein the second light emitting material layer, the electron transporting layer and the electron injecting layer are disposed over the bank layer.

6. The organic light emitting diode display device of claim 5 , wherein the light emitting layer of a second pixel region adjacent to the first pixel region includes a hole injecting layer, a hole transporting layer, a second light emitting material layer, an electron transporting layer and an electron injecting layer.

7. The organic light emitting diode display device of claim 6 , wherein the first light emitting material layer of the first pixel region is a red or green light emitting material layer, and the second light emitting material layer of the second pixel region is a blue light emitting material layer.

8. The organic light emitting diode display device of claim 1 , further comprising:

a first dummy electrode on a same layer as a gate electrode of the thin film transistor; and

a second dummy electrode on a same layer as the drain electrode of the thin film transistor,

wherein the first and second dummy electrodes are electrically connected to the auxiliary electrode.

9. The organic light emitting diode display device of claim 1 , wherein the second electrode is electrically connected to the center of the auxiliary electrode.

10. The organic light emitting diode display device of claim 1 , wherein the second electrode is connected to the center of the auxiliary electrode exposed by the residual layer.

11. The organic light emitting diode display device of claim 1 , wherein the second electrode has a transmittance of 45 to 50%.