Resistance change memory devices

1. A resistance change memory element comprising:

a lower electrode;

a variable resistive layer disposed on the lower electrode and configured to include an oxygenated carbon structure;

a barrier layer disposed on the variable resistive layer and configured to include an oxygen containable material that is able to be reversibly oxidized and reduced; and

an upper electrode disposed on the barrier layer.

2. The resistance change memory element of claim 1 , wherein the variable resistive layer and the barrier layer are disposed to provide an interface therebetween.

3. The resistance change memory element of claim 1 ,

wherein the oxygenated carbon structure comprises carbon-to-carbon bonds;

wherein a resistivity value of the oxygenated carbon structure is determined according to the hybridization of carbon-to-carbon bonds; and

wherein the oxygenated carbon structure has at least one of sp 2 hybridized bonds and sp 3 hybridized bonds as the carbon-to-carbon bonds.

4. The resistance change memory element of claim 1 ,

wherein the oxygenated carbon structure comprises oxygen-to-carbon bonds;

wherein the oxygen-to-carbon bonds are broken by a bias voltage applied to the upper electrode to generate oxygen ions.

5. The resistance change memory element of claim 1 , further comprising:

conductive bridges disposed in the variable resistive layer to connect the lower electrode to the barrier layer; and

an interfacial oxide layer between the barrier layer and the variable resistive layer,

wherein an electrical resistance of the interfacial oxide layer is higher than an electrical resistance of the barrier layer.

6. The resistance change memory element of claim 5 , wherein the interfacial oxide layer reduces an amount of a current flowing through the conductive bridges when a bias voltage is applied between the lower electrode and the upper electrode.

7. The resistance change memory element of claim 6 , wherein the conductive bridges are formed by reduction oxygen-to-carbon bonds of the oxygenated carbon structure.

8. The resistance change memory element of claim 1 , further comprising conductive bridges formed in the variable resistive layer,

wherein the conductive bridges are degraded to increase a resistance value between the lower electrode and the upper electrode when a predetermined voltage is applied to the upper electrode.

9. The resistance change memory element of claim 1 , wherein the oxygen containable material is preferentially oxidized compared to the lower electrode.

10. The resistance change memory element of claim 9 , wherein the oxygen containable material includes at least one of a hafnium (Hf) material, a titanium (Ti) material, a tantalum (Ta) material, an aluminum (Al) material, an alloy material of hafnium and titanium, an alloy material of tantalum and aluminum, an alloy material of titanium and tantalum, an alloy material of titanium and aluminum, an alloy material of hafnium and aluminum, an alloy material of tungsten and titanium, a tungsten silicide (WSi) material, a tantalum silicide (TaSi) material, a titanium silicide (TiSi) material and an N-type silicon material.

11. The resistance change memory element of claim 9 , wherein the lower electrode includes at least one of a platinum (Pt) material, a tungsten (W) material, a tantalum nitride (TaN) material and a titanium (TiN) nitride material.

12. The resistance change memory element of claim 1 , wherein the upper electrode includes at least one of a platinum (Pt) material, a tungsten (W) material, a tantalum nitride (TaN) material and a titanium (TiN) nitride material.

13. A resistance change memory element comprising:

a lower electrode;

a variable resistive layer disposed on the lower electrode and configured to include an oxygenated carbon structure;

a barrier layer disposed on the variable resistive layer and configured to include an oxygen containable material that is able to be reversibly oxidized and reduced; and

an upper electrode disposed on the barrier layer,

wherein the variable resistive layer is configured to control a datum stored in the resistance change memory element based on formation or degradation of conductive bridges generated in the variable resistive layer.

14. The resistance change memory element of claim 13 ,

wherein the oxygenated carbon structure comprises carbon-to-carbon bonds;

wherein a resistivity value of the oxygenated carbon structure is determined according to the hybridization of carbon-to-carbon bonds; and

wherein the oxygenated carbon structure has at least one of sp 2 hybridized bonds and spa hybridized bonds as the carbon-to-carbon bonds.

15. The resistance change memory element of claim 14 ,

wherein the oxygenated carbon structure comprises oxygen-to-carbon bonds; and

wherein the conductive bridges are provided by reduction of the oxygen-to-carbon bonds in oxygenated carbon structure.

16. The resistance change memory element of claim 13 , further comprising an interfacial oxide layer formed between the barrier layer and the variable resistive layer when a positive bias voltage is applied to the upper electrode,

wherein an electrical resistance of the interfacial oxide layer is higher than an electrical resistance of the barrier layer.

17. The resistance change memory element of claim 13 , wherein oxygen-to-carbon bonds of the oxygenated carbon structure are broken by a bias voltage applied to the upper electrode to generate oxygen ions.

18. The resistance change memory element of claim 13 , wherein the oxygen containable material includes at least one of a hafnium (Hf) material, a titanium (Ti) material, a tantalum (Ta) material, an aluminum (Al) material, an alloy material of hafnium and titanium, an alloy material of tantalum and aluminum, an alloy material of titanium and tantalum, an alloy material of titanium and aluminum, an alloy material of hafnium and aluminum, an alloy material of tungsten and titanium, a tungsten silicide (WSi) material, a tantalum silicide (TaSi) material, a titanium silicide (TiSi) material and an N-type silicon material.

19. The resistance change memory element of claim 13 , wherein the lower electrode includes at least one of a platinum (Pt) material, a tungsten (W) material, a tantalum nitride (TaN) material and a titanium (TiN) nitride material.

20. The resistance change memory element of claim 13 ,

wherein the resistance change memory element has a relatively low resistive state when the conductive bridges are formed by a positive voltage applied to the upper electrode; and

wherein the resistance change memory element has a relatively high resistive state when portions of the conductive bridges are removed by a negative voltage applied to the upper electrode.