IP Library › Granted Patent US 10,497,893
Granted Patent B2
US 10,497,893 · App. 15/563,087 · Granted Dec 3, 2019

Method for doping graphene, method for manufacturing graphene composite electrode, and graphene structure comprising same

Inventors: Jinsan Moon (Seoul, KR); Wonbae Park (Seoul, KR); Subeom Park (Seoul, KR); Insu Jo (Seoul, KR); Byunghee Hong (Seoul, KR)
Assignees: LG ELECTRONICS INC.; SNU R&DB FOUNDATION
H01L51/5215C23C16/26C23C16/511H01B1/04H01L51/003H01L51/0021H01L51/0097H01L51/56H01L2251/5338
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,497,893
App. No.
15/563,087
Granted
Dec 3, 2019
Kind
B2
Abstract

The present invention relates to graphene and, particularly, to a method for doping graphene using substrate surface modification, a method for manufacturing a graphene composite electrode using graphene and inorganic matter, and a graphene structure comprising the same. The method for doping graphene according to an embodiment of the present invention may comprise the steps of: forming, on a substrate, a precursor polymer layer for doping; and positioning graphene on the substrate on which the precursor polymer layer is formed. In addition, the method for manufacturing a graphene composite electrode according to an embodiment of the present invention may comprise the steps of: forming graphene on catalyst metal; forming a transparent conductive oxide on the graphene; crystallizing the transparent conductive oxide by applying heat of 150° C. or higher; and transferring, to a final substrate, a composite electrode consisting of the graphene and the transparent conductive oxide.

Claims (14)

1. A method of doping graphene using substrate surface modification comprising:

forming a precursor polymer layer for doping on a substrate; and

disposing graphene on the substrate provided with the precursor polymer layer,

wherein the precursor polymer layer includes a precursor having plasma-treated cyclohexane such that a methyl group is exposed to an end of the precursor, and

wherein the precursor has an open ring structure of cyclohexane by plasma treatment to form a radical molecule.

2. The method according to claim 1 , wherein the substrate is a polymer substrate.

3. The method according to claim 2 , wherein the polymer substrate comprises at least one of polyethylene terephthalate (PET), triacetyl cellulose (TAC), and polycarbonate (PC).

4. The method according to claim 1 , wherein the formation of the precursor polymer layer is carried out using plasma enhanced chemical vapor deposition.

5. The method according to claim 1 , further comprising: doping the graphene.

6. The method according to claim 1 , wherein a surface modification is performed by the methyl group exposed to the end.

7. The method according to claim 1 , wherein the surface modification is performed on both sides of the substrate.

8. The method according to claim 1 , wherein the graphene is doped by the methyl group exposed to the end.

9. The method according to claim 8 , further comprising doping the graphene on the substrate.

10. The method according to claim 1 , wherein the formed radical molecules undergo an increase in molecular weight as reaction occurs, whereby the precursor polymer layer having a methyl group as the end is uniformly formed on the substrate so as to improve property of the substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 2, 2017
From: MOON, JINSAN; PARK, WONBAE; PARK, SUBEOM; JO, INSU; HONG, BYUNGHEE
To: LG ELECTRONICS INC.; SNU R&DB FOUNDATION
Reel/Frame 043756/0378 →
Priority Claims (2)
KR 10-2015-0052901 · Apr 15, 2015 · national
KR 10-2015-0052902 · Apr 15, 2015 · national
Continuity (1)
Related Publication 20180083220A1 · Mar 22, 2018
Cited By (2)
US 12,489,028 US 12,698,560