Film forming apparatus and film forming method
The film forming apparatus includes a reaction chamber in which a substrate subjected to film forming processing can be placed, a gas supplier provided in an upper part of the reaction chamber, having a portion where gas is introduced and gas supply holes to face the substrate, a source-gas introducing line introducing a source gas into the gas supplier, a replacement-gas introducing line introducing a replacement gas into the gas supplier, a discharge line discharging the replacement gas along with a remaining source gas which is the source gas remaining in the gas supplier from the gas supplier; and a controller controlling one of an introduction amount of the replacement gas and a discharge amount of the remaining source gas and the replacement gas to be an amount corresponding to the other amount.
1. A film forming apparatus comprising:
a reaction chamber in which a substrate subjected to film forming processing can be placed;
a gas supplier provided in an upper part of the reaction chamber, having a portion where gas is introduced and gas supply holes to face the substrate;
a source-gas introducing line introducing a source gas into the gas supplier, the source-gas introducing line comprising a valve;
a vent line through which a vent gas flows, the vent line being connected to the source-gas introducing line via the valve;
a replacement-gas introducing line introducing a replacement gas into the gas supplier;
a discharge line discharging the replacement gas along with a remaining source gas which is the source gas remaining in the gas supplier from the gas supplier; and
a mass flow controller controlling one of an introduction flow rate of the replacement gas and a discharge flow rate of the remaining source gas and the replacement gas to be a flow rate corresponding to the other flow rate,
wherein the valve is capable of allowing the vent line to discharge the source gas from the source-gas introducing line along with the vent gas,
the valve is interchangeable between a first state and a second state,
the valve in the first state opens a connection between the source-gas introducing line and the gas supplier and closes a connection between the source-gas introducing line and the vent line, and
the valve in the second state closes the connection between the source-gas introducing line and the gas supplier and opens the connection between the source-gas introducing line and the vent line to discharge the source gas from the source-gas introducing line along with the vent gas through the vent line.
2. The apparatus of claim 1 , wherein the replacement-gas introducing line is a line independent of the source-gas introducing line.
3. The apparatus of claim 1 , wherein
the replacement-gas introducing line comprises a bypass line communicated with the source-gas introducing line and having a replacement gas introduced thereinto, and
the replacement gas is introduced from the bypass line into the reaction chamber through the source-gas introducing line.
4. The apparatus of claim 1 , wherein the mass flow controller controls the introduction flow rate of the replacement gas and the discharge flow rate of the remaining source gas and the replacement gas to be an equal flow rate.
5. The apparatus of claim 2 , wherein
the mass flow controller comprises
a first mass flow controller controlling the introduction flow rate of the replacement gas, and
a second mass flow controller controlling the discharge flow rate of the remaining source gas and the replacement gas, and
the first mass flow controller and the second mass flow controller control flow rates of gases flowing therethrough, respectively, to be an equal flow rate.
6. The apparatus of claim 1 , wherein
the source-gas introducing line comprises
a group-III run line introducing a group-III source gas into the gas supplier, and
a group-V run line introducing a group-V source gas into the gas supplier.
7. A film forming method using the apparatus of claim 1 , comprising:
placing the substrate in the reaction chamber;
introducing a first source gas containing a component of a first film into the gas supplier facing the substrate and having the gas supply holes provided thereon through the source-gas introducing line communicated with the gas supplier, and supplying the first source gas into the reaction chamber from the gas supplier through the gas supply holes, to form the first film on the substrate;
stopping introduction of the first source gas and discharging the first source gas from the source-gas introducing line along with the vent gas through the vent line connected to the source-gas introducing line; and
introducing the replacement gas into the gas supplier, discharging the replacement gas along with a first remaining source gas which is the first source gas remaining in the gas supplier from the gas supplier through the discharge line communicated with the gas supplier, and controlling one of the introduction flow rate of the replacement gas and the discharge flow rate of the first remaining source gas and the replacement gas to be the flow rate corresponding to the other flow rate by the mass flow controller.
8. A film forming method comprising:
placing a substrate in a reaction chamber;
introducing a first source gas containing a component of a first film into a gas supplier facing the substrate and having gas supply holes provided thereon through a source-gas introducing line communicated with the gas supplier, and supplying the first source gas into the reaction chamber from the gas supplier through the gas supply holes, to form the first film on the substrate;
stopping introduction of the first source gas and discharging the first source gas from the source-gas introducing line along with a vent gas through a vent line connected to the source-gas introducing line via a valve provided on the source-gas introducing line; and
introducing a replacement gas into the gas supplier, discharging the replacement gas along with a first remaining source gas which is the first source gas remaining in the gas supplier from the gas supplier through a discharge line communicated with the gas supplier, and controlling one of an introduction flow rate of the replacement gas and a discharge flow rate of the first remaining source gas and the replacement gas to be a flow rate corresponding to the other flow rate by a mass flow controller, wherein
the introducing the first source gas comprises causing the valve to be in a first state in which the valve opens a connection between the source-gas introducing line and the gas supplier and closes a connection between the source-gas introducing line and the vent line, and
the stopping introduction of the first source gas comprises causing the valve to be in a second state in which the valve closes the connection between the source-gas introducing line and the gas supplier and opens the connection between the source-gas introducing line and the vent line to discharge the source gas from the source-gas introducing line along with the vent gas through the vent line.
9. The method of claim 8 , further comprising discharging the replacement gas along with the first remaining source gas, then introducing a second source gas containing a component of a second film into the gas supplier through the source-gas introducing line, and supplying the second source gas from the gas supplier into the reaction chamber through the gas supply holes, to form the second film on the first film.
10. The method of claim 8 , wherein the first source gas contains a group-III source gas and a group-V source gas.
11. The method of claim 9 , wherein the second source gas contains a group-III source gas and a group-V source gas.
12. The apparatus of claim 1 , wherein the vent line is not connected to the gas supplier.
13. The method of claim 8 , wherein the vent line is not connected to the gas supplier.