Method and apparatus for selective epitaxy
A method of forming a film on a substrate having silicon surfaces and dielectric surfaces includes precleaning the substrate; applying an inhibitor species to the dielectric surfaces; and exposing the substrate to a precursor while maintaining a temperature of less than about 600 degrees Celsius.
1. A method of forming a film on a substrate, the method comprising:
precleaning a substrate, wherein a surface of the substrate comprises silicon surfaces and dielectric surfaces;
applying an inhibitor species to the surface of the substrate in a first processing chamber such that the inhibitor species preferentially attaches to the dielectric surfaces of the surface of the substrate;
exposing the substrate having the inhibitor species on the dielectric surfaces thereof to a precursor for epitaxial deposition of a silicon- or germanium- containing layer in a second processing chamber, different than the first processing chamber, while maintaining the substrate at a first temperature of less than about 600 degrees Celsius; and
removing the inhibitor species from the dielectric surfaces with an oxidation process in a third processing chamber, different than the second processing chamber, while maintaining the substrate at a second temperature that is lower than the first temperature.
2. The method of claim 1 , wherein the precursor comprises at least one of a silicon source or a germanium source.
3. The method of claim 2 , wherein the precursor comprises at least one of a carbon source or a dopant source.
4. The method of claim 1 , further comprising depositing a silicon-containing epitaxial layer comprising phosphorus on the substrate.
5. The method of claim 1 , further comprising depositing a germanium-containing epitaxial layer comprising boron on the substrate.
6. The method of claim 1 , wherein applying the inhibitor species comprises exposing the substrate to at least one of trichlorosilane, trialkoxysilanes, silylamines, carbon, or a polymer.
7. The method of claim 1 , further comprising removing at least one of amorphous silicon or amorphous germanium from the dielectric surfaces.
8. The method of claim 7 , wherein the removing the at least one of amorphous silicon or amorphous germanium comprises exposing the substrate to an etching gas.
9. The method of claim 1 , further comprising removing at least one of amorphous silicon or amorphous germanium from the dielectric surfaces before removing the inhibitor species from the dielectric surfaces.
10. The method of claim 1 , further comprising pre-baking the substrate in the second processing chamber.
11. The method of claim 1 , further comprising pre-baking the substrate in a fourth processing chamber.
12. The method of claim 1 , wherein the precleaning is performed in a preclean chamber.