Solid-state imaging device
Solid-state imaging devices, electronic apparatuses, and methods of forming image sensors are provided. A solid-state imaging device or an electronic apparatus incorporating a solid-state imaging device can include a substrate and at least a first photoelectric conversion element formed in the substrate. In addition, a region with a low dielectric constant is formed. The region can include a locally thin region formed in the substrate. An insulating film is at the first side of the substrate. Where the region includes a locally thin region, the interlayer insulating film can extend into that locally thin region. A first electrode is at a side of the interlayer insulating film opposite the substrate. The device further includes a second electrode, and a photoelectric conversion layer at least partially between the first electrode and the second electrode.
1. A solid-state imaging device, comprising:
a substrate;
a first photoelectric conversion element inside the substrate;
a recess in the substrate;
an interlayer insulating film at a first side of the substrate, wherein the interlayer insulating film extends into the recess;
a first electrode at a side of the interlayer insulating film, wherein the side of the interlayer insulating film is opposite to the first side of the substrate;
a second electrode;
a photoelectric conversion layer between the first electrode and the second electrode; and
a shield electrode at the side of the interlayer insulating film, wherein:
the shield electrode is separated from the first electrode by a gap,
a region of the solid-state imaging device comprises the gap,
the region further comprises the recess which opposes a portion of the second electrode, and
in the region, only the interlayer insulating film and the photoelectric conversion layer are between the recess and the portion of the second electrode.
2. The solid-state imaging device of claim 1 ,
wherein the recess extends from the first side of the substrate towards a second side of the substrate.
3. The solid-state imaging device of claim 1 , wherein the recess is adjacent to the first photoelectric conversion element.
4. The solid-state imaging device of claim 3 , further comprising an organic photoelectric conversion element,
wherein the organic photoelectric conversion element includes the first electrode, the photoelectric conversion layer, and the second electrode.
5. The solid-state imaging device of claim 4 , further comprising a pixel,
wherein the pixel includes the organic photoelectric conversion element and the first photoelectric conversion element.
6. The solid-state imaging device of claim 5 , further comprising:
a plurality of first electrodes that includes the first electrode,
a plurality of first photoelectric conversion elements that includes the first photoelectric conversion element,
a plurality of pixels that includes the pixel, wherein each pixel of the plurality of pixels includes at least one of the plurality of first electrodes and at least one of the plurality of first photoelectric conversion elements; and
a plurality of recesses.
7. The solid-state imaging device of claim 6 , wherein:
each pair of adjacent first electrodes of the plurality of first electrodes is separated, and
each pair of adjacent pixels of the plurality of pixels is separated by the recess.
8. The solid-state imaging device of claim 4 , further comprising a second photoelectric conversion element inside the substrate, wherein the recess in the substrate is adjacent to the first photoelectric conversion element and the second photoelectric conversion element.
9. The solid-state imaging device of claim 8 , further comprising a pixel,
wherein the pixel includes the organic photoelectric conversion element, the first photoelectric conversion element, and the second photoelectric conversion element.
10. The solid-state imaging device of claim 9 , wherein the organic photoelectric conversion element, the first photoelectric conversion element, and the second photoelectric conversion element of the pixel are sensitive to different colors.
11. The solid-state imaging device of claim 10 , wherein:
the organic photoelectric conversion element is sensitive to green light,
the first photoelectric conversion element is sensitive to blue light, and
the second photoelectric conversion element is sensitive to red light.
12. The solid-state imaging device of claim 1 , wherein the shield electrode and the first electrode are located in a same plane.
13. The solid-state imaging device of claim 12 , wherein the shield electrode surrounds the first electrode in the plane.
14. The solid-state imaging device of claim 13 , further comprising a plurality of first electrodes that includes the first electrode, wherein each of the plurality of first electrodes are arranged in a matrix within the plane.
15. The solid-state imaging device of claim 14 , wherein the shield electrode is in a lattice pattern.
16. The solid-state imaging device of claim 1 , wherein the recess is located in the region corresponding to the gap.
17. The solid-state imaging device of claim 1 , wherein the first electrode extends from the side of the interlayer insulating film towards the first side of the substrate.
18. An electronic apparatus, comprising:
a solid-state imaging device that comprises:
a substrate;
at least a first photoelectric conversion element inside the substrate;
a recess in the substrate, wherein the recess extends from a first side of the substrate towards a second side of the substrate;
an interlayer insulating film at the first side of the substrate, wherein the interlayer insulating film extends into the recess;
a first electrode at a side of the interlayer insulating film, wherein the side of the interlayer insulating film is opposite to the first side of the substrate;
a photoelectric conversion layer, wherein at least a portion of the photoelectric conversion layer is on the first electrode;
a second electrode on the photoelectric conversion layer; and
a shield electrode at the side of the interlayer insulating film, wherein:
the shield electrode is separated from the first electrode by a gap,
a region of the solid-state imaging device comprises the gap,
the region further comprises the recess which opposes a portion of the second electrode, and
in the region, only the interlayer insulating film and the photoelectric conversion layer are between the recess and the portion of the second electrode;
a protective film, on a side of the second electrode, opposite the photoelectric conversion layer; and
a lens, adjacent to a side of the protective film, opposite the second electrode.
19. A method of forming an image sensor, comprising:
forming a substrate;
forming a first photoelectric conversion element inside the substrate;
forming a recess in the substrate;
forming an interlayer insulating film at a first side of the substrate, wherein the interlayer insulating film extends into the recess;
forming a first electrode at a side of the interlayer insulating film, wherein the side of the interlayer insulating film is opposite to the first side of the substrate;
forming a photoelectric conversion layer on the first electrode;
forming a second electrode on the photoelectric conversion layer; and
forming a shield electrode at the side of the interlayer insulating film, wherein:
the shield electrode is separated from the first electrode by a gap,
a region of a solid-state imaging device comprises the gap,
the region further comprises the recess which opposes a portion of the second electrode, and
in the region, only the interlayer insulating film and the photoelectric conversion layer are between the recess and the portion of the second electrode.