Photovoltaic device
A photovoltaic device and a photovoltaic module are provided that suppressing diffusion of boron and thereby improving conversion efficiency. A photovoltaic device 10 includes: a semiconductor substrate 1 ; an intrinsic amorphous semiconductor layer 3 provided on the semiconductor substrate 1 ; n-type amorphous semiconductor strips 4 containing phosphorus as a dopant; and p-type amorphous semiconductor strips 5 containing boron as a dopant, the n- and p-type amorphous semiconductor strips 4 and 5 being provided alternately on the intrinsic amorphous semiconductor layer 3 as viewed along an in-plane direction. Each n-type amorphous semiconductor strip 4 includes a reduced-thickness region TD(n) on a face thereof adjacent to one of the p-type amorphous semiconductor strips 5 . Each p-type amorphous semiconductor strip 5 includes a reduced-thickness region TD(p) on a face thereof adjacent to one of the n-type amorphous semiconductor strips 4 . The reduced-thickness region TD(p) of the p-type amorphous semiconductor strip 5 has a steeper angle of inclination than does the reduced-thickness region TD(n) of the n-type amorphous semiconductor strip 4.
1. A photovoltaic device comprising:
a semiconductor substrate:
n-type amorphous semiconductor strips containing phosphorus as a dopant; and
p-type amorphous semiconductor strips containing boron as a dopant, the n- and p-type amorphous semiconductor strips being provided alternately on the semiconductor substrate as viewed along an in-plane direction of the semiconductor substrate, wherein:
each of the n-type amorphous semiconductor strips includes a reduced-thickness region on a face thereof adjacent to one of the p-type amorphous semiconductor strips;
each of the p-type amorphous semiconductor strips includes a reduced-thickness region on a face thereof adjacent to one of the n-type amorphous semiconductor strips;
the reduced-thickness region of one of the p-type amorphous semiconductor strips has a steeper angle of inclination than does the reduced-thickness region of one of the n-type amorphous semiconductor strips:
and the reduced-thickness region of one of the p-type amorphous semiconductor strips has a dopant concentration that is higher than a dopant concentration at a first point, where:
the first point is a point at which each of the n-type amorphous semiconductor strips and p-type semiconductor strips formed on the semiconductor substrate has a maximum thickness; a second point is either a point at which a rate of decrease of the thickness of each of the n-type amorphous semiconductor strips and p-type semiconductor strips, as traced along an in-plane direction of each of the n-type amorphous semiconductor strips and p-type semiconductor strips, changes from a first rate of decrease to a second rate of decrease that is larger than the first rate of decrease or a point at which a rate of change of the thickness of each of the n-type amorphous semiconductor strips and p-type semiconductor strips, as traced along the in-plane direction of each of the n-type amorphous semiconductor strips and p-type semiconductor strips, changes sign from negative to positive; and the reduced-thickness region is a region from the first point to the second point as traced along the in-plane direction of each of the n-type amorphous semiconductor strips and p-type semiconductor strips.
2. The photovoltaic device according to claim 1 , wherein each of the n-type amorphous semiconductor strips is separated from each adjacent one of the p-type amorphous semiconductor strips by a distance of from 20 μm inclusive to 100 μm exclusive.
3. The photovoltaic device according to claim 1 , wherein the n- and p-type amorphous semiconductor strips are provided on a textured surface of the semiconductor substrate.
4. The photovoltaic device according to claim 1 , wherein each of the n- and p-type amorphous semiconductor strips is provided in a single stretch in a direction perpendicular to a direction in which the n- and p-type amorphous semiconductor strips tie adjacent to each other.
5. The photovoltaic device according to claim 1 , wherein either the n-type amorphous semiconductor strips or the p-type amorphous semiconductor strips or both are disposed spaced apart in a direction perpendicular to a direction in which the n- and p-type amorphous semiconductor strips lie adjacent to each other.
6. The photovoltaic device according to claim 1 , wherein the n- and p-type amorphous semiconductor strips are disposed alternately as viewed along two intersecting directions on the semiconductor substrate.
7. The photovoltaic device according to claim 1 , further comprising an intrinsic amorphous semiconductor layer provided on and in contact with the semiconductor substrate.
8. The photovoltaic device according to claim 1 , further comprising:
first electrodes on the n-type amorphous semiconductor strips; and
second electrodes on the p-type amorphous semiconductor strips,
wherein:
on each of the n-type amorphous semiconductor strips, each first electrode is in contact with at least a part of the reduced-thickness region of that n-type amorphous semiconductor strip; and
on each of the p-type amorphous semiconductor strips, each second electrode is in contact with at least a part of the reduced-thickness region of that p-type amorphous semiconductor strip.