Display device
An organic light emitting diode display device includes a first driving voltage line including a first portion extending in a first direction and a second portion having a larger width than the first portion in a second direction perpendicular to the first direction. The second portion overlaps a gate electrode of a driving thin film transistor, an interlayer insulating layer is between the second portion and the gate electrode of the driving thin film transistor.
1. A display device, comprising:
a substrate,
a first semiconductor and a second semiconductor on the substrate;
a first insulating layer on the first semiconductor and the second semiconductor;
a first gate electrode on the first insulating layer and overlapping the first semiconductor;
a second gate electrode on the first insulating layer and overlapping the second semiconductor;
a second insulating layer on the first gate electrode and the second gate electrode;
a data line on the second insulating layer; and
a first driving voltage line on the second insulating layer,
wherein the first driving voltage line includes a first portion extending in a first direction and a second portion having a larger width than the first portion in a second direction perpendicular to the first direction,
wherein the second portion overlaps at least a portion of the second gate electrode with the second insulating layer interposed between the second portion and the second gate electrode in a plan view, and
wherein the first portion and the second portion are electrically connected to each other.
2. The device as claimed in claim 1 , wherein the first portion and the second portion are in a same layer as each other.
3. The device as claimed in claim 1 , wherein the second semiconductor has one or more bent portions.
4. The device as claimed in claim 1 , further comprising:
a second driving voltage line in a different layer from the first driving voltage line and electrically connected to the first driving voltage line,
wherein the second driving voltage line includes a portion substantially extending in the second direction.
5. The device as claimed in claim 4 , wherein the second driving voltage line is in a different layer from the data line.
6. The device as claimed in claim 5 , wherein the second driving voltage line electrically connects two or more adjacent ones of the first driving voltage line to each other.
7. The device as claimed in claim 6 , wherein the second driving voltage line includes a portion extending substantially in a direction crossing the first direction.
8. The device as claimed in claim 7 , wherein the second driving voltage line is in a same layer as the second gate electrode and includes a same material as the second gate electrode.
9. The device as claimed in claim 8 , wherein:
the second gate electrode has a portion not overlapping the second portion of the first driving voltage line, and
the second insulating layer includes a contact hole on the portion of the second gate electrode not overlapping the second portion.
10. The device as claimed in claim 9 , further comprising:
a connector connected to the second gate electrode through the contact hole of the second insulating layer,
wherein the connector is in a same layer as the first driving voltage line.
11. The device as claimed in claim 4 , wherein the second driving voltage line is in a layer between the first driving voltage line and the substrate.
12. The device as claimed in claim 4 , wherein the data line is in a same layer as the first driving voltage line.
13. The device as claimed in claim 1 , wherein the second portion includes a protrusion extending substantially in the first direction and opposing the first portion of the first driving voltage line.
14. The device as claimed in claim 13 , further comprising:
a vertical semiconductor connected to the second semiconductor and extending substantially in the first direction, the vertical semiconductor not overlapping the second gate electrode in the plan view,
wherein the protrusion overlaps a gap between the second gate electrode and the vertical semiconductor.
15. The device as claimed in claim 1 , wherein the first semiconductor is integrally formed with the second semiconductor.
16. The device as claimed in claim 1 , further comprising:
a scan line connected to the first gate electrode, wherein the scan line is in a same layer as the second gate electrode.
17. The device as claimed in claim 1 , wherein only the second insulating layer is between the second portion of the first driving voltage line and the second gate electrode.
18. The device as claimed in claim 1 , wherein any other conductive layer is not between the second portion of the first driving voltage line and the second gate electrode.
19. The device as claimed in claim 1 , further comprising:
a switching thin film transistor including the first semiconductor, the first gate electrode, a first source electrode connected to the data line, and a first drain electrode opposing the first source electrode;
a driving thin film transistor including the second semiconductor, the second gate electrode, a second source electrode connected to the first drain electrode, and a second drain electrode opposing the second source electrode;
a storage capacitor formed by the second gate electrode as a first storage terminal and the second portion of the first driving voltage line as a second storage terminal; and
an organic light emitting diode electrically connected to the second drain electrode of the driving thin film transistor.
20. The device as claimed in claim 19 , further comprising:
a third insulating layer on the second insulating layer, the data line, and the first driving voltage line,
wherein the organic light emitting diode includes:
a pixel electrode on the third insulating layer;
an organic emission layer on the pixel electrode; and
a common electrode on the organic emission layer.