Vapor phase growth apparatus having substrate holder with ring-shaped protrusion
A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a ring-shaped holder provided in the reaction chamber, the ring-shaped holder configured to hold a substrate, the ring-shaped holder including an outer portion, and an inner portion on which a ring-shaped protrusion is provided and surrounded by the outer portion, the ring-shaped protrusion being separated from the outer portion, an upper surface of the outer portion being higher than an upper surface of the ring-shaped protrusion, and a heater provided below the ring-shaped holder.
1. A vapor phase growth apparatus comprising:
a reaction chamber;
a ring-shaped holder provided in the reaction chamber, the ring-shaped holder configured to hold a substrate, the ring-shaped holder including an outer portion, and an inner portion on which a ring-shaped protrusion is provided and surrounded by the outer portion, the ring-shaped protrusion being separated from the outer portion, an upper surface of the outer portion being higher than an upper surface of the ring-shaped protrusion, the upper surface of the ring-shaped protrusion being a flat surface, the ring-shaped holder having an opening portion at a center of the ring-shaped holder, a maximum distance between an inner end of the outer portion which is closest to the center of the ring-shaped holder and an outer end of the ring-shaped protrusion which is on a diametrically opposite side of the ring-shaped holder being equal to or smaller than a diameter of the substrate; and
a heater provided below the ring-shaped holder, no component being provided between the heater and a center portion of the substrate,
wherein a diameter of the opening portion is equal to or greater than 90% of a diameter of the substrate, and
wherein an upper part of an inner surface of the outer portion protrudes inward from a lower part of the inner surface of the outer portion and a concave recess having a height greater than the height of the upper surface of the ring-shaped protrusion, but less than the height of the upper surface of the outer portion is formed.
2. The vapor phase growth apparatus according to claim 1 ,
wherein, in a cross section of the ring-shaped holder in a radial direction, a height of the ring-shaped protrusion is less than a width of the ring-shaped protrusion.
3. A vapor phase growth apparatus comprising:
a reaction chamber;
a ring-shaped holder provided in the reaction chamber, the ring-shaped holder configured to hold a substrate, the ring-shaped holder including an outer portion, and an inner portion on which a ring-shaped protrusion is provided and surrounded by the outer portion, the ring-shaped protrusion being separated from the outer portion, an upper surface of the outer portion being higher than an upper surface of the ring-shaped protrusion, the upper surface of the ring-shaped protrusion being a flat surface, the ring-shaped holder having an opening portion at a center of the ring-shaped holder, a maximum distance between an inner end of the outer portion which is closest to the center of the ring-shaped holder and an outer end of the ring-shaped protrusion which is on a diametrically opposite side of the ring-shaped holder being equal to or smaller than a diameter of the substrate; and
a heater provided below the ring-shaped holder, no component being provided between the heater and a center portion of the substrate,
wherein a diameter of the opening portion is equal to or greater than 90% of a diameter of the substrate,
wherein an upper part of an inner surface of the outer portion protrudes inward from a lower part of the inner surface of the outer portion and a concave recess having a height greater than the height of the upper surface of the ring-shaped protrusion, but less than the height of the upper surface of the outer portion is formed, and
wherein the ring-shaped holder includes a plurality of island-shaped protrusions provided on the inner end of the outer portion and the island-shaped protrusions are separated from the ring-shaped protrusion.
4. The vapor phase growth apparatus according to claim 3 ,
wherein, in a vertical cross section of each of the island-shaped protrusions, a portion of an inner end of the each of the island-shaped protrusions protrudes inward from another portion.
5. The vapor phase growth apparatus according to claim 4 ,
wherein the portion of the inner end of the each of the island-shaped protrusions is an upper part of the inner end of the each of the island-shaped protrusions.
6. The vapor phase growth apparatus according to claim 3 ,
wherein the number of the plurality of island-shaped protrusions is three or more.
7. The vapor phase growth apparatus according to claim 1 ,
wherein the ring-shaped protrusion is separated from the inner circumference of the inner portion by a predetermined distance.
8. The vapor phase growth apparatus according to claim 1 ,
wherein a corner of an upper end of the ring-shaped protrusion is chamfered.
9. A vapor phase growth apparatus comprising:
a reaction chamber;
a ring-shaped holder provided in the reaction chamber, the ring-shaped holder configured to hold a substrate, the ring-shaped holder including an outer portion, and an inner portion on which a ring-shaped protrusion is provided and surrounded by the outer portion, the ring-shaped protrusion being separated from the outer portion, an upper surface of the outer portion being higher than an upper surface of the ring-shaped protrusion, the upper surface of the ring-shaped protrusion being a flat surface, the ring-shaped holder having an opening portion at a center of the ring-shaped holder, a maximum distance between an inner end of the outer portion which is closest to the center of the ring-shaped holder and an outer end of the ring-shaped protrusion which is on a diametrically opposite side of the ring-shaped holder being equal to or smaller than a diameter of the substrate; and
a heater provided below the ring-shaped holder, the heater configured to heat a center portion of the substrate by heat radiated from the heater,
wherein a diameter of the opening portion is equal to or greater than 90% of a diameter of the substrate, and
wherein an upper part of an inner surface of the outer portion protrudes inward from a lower part of the inner surface of the outer portion and a concave recess having a height greater than the height of the upper surface of the ring-shaped protrusion, but less than the height of the upper surface of the outer portion is formed.
10. The vapor phase growth apparatus according to claim 9 ,
wherein, the heater configured to heat the center portion of the substrate directly by heat radiated from the heater.
11. The vapor phase growth apparatus according to claim 1 , wherein the diameter of the opening portion is equal to or greater than 95% of a diameter of the substrate.
12. The vapor phase growth apparatus according to claim 9 , wherein the diameter of the opening portion is equal to or greater than 95% of a diameter of the substrate.