Wavy metal nanowire network thin film, stretchable transparent electrode including the metal nanowire network thin film and method for forming the metal nanowire network thin film
A wavy metal nanowire network thin film, a stretchable transparent electrode including the metal nanowire network thin film, and a method for forming the metal nanowire network thin film. More specifically, it relates to a wavy nanowire network structure based on straight metal nanowires, a method for producing the nanowire network structure, and a flexible electrode including the wavy metal nanowire structure. The flexible electrode of the present invention is transparent and stretchable and exhibits stable performance even when subjected to various deformations.
1. A method for forming a wavy metal nanowire network thin film, comprising:
(a) stretching a stretchable substrate,
(b) forming a metal nanowire network on the stretched substrate,
(c) bringing a solvent into contact with the metal nanowire network formed on the substrate, and
(d) releasing the strain applied to the substrate in a state in which the metal nanowire network and the solvent are in contact with each other,
wherein,
the stretchable substrate is made of polydimethylsiloxane,
a metal of the metal nanowire network is Ag,
the solvent is water,
the stretchable substrate is stretched horizontally in step (a),
the stretchable substrate is stretched to 130 to 170% of its initial area in step (a),
an as-prepared nanowire network is transferred to the substrate in step (b),
the solvent contacts with the surface of the substrate by dropping in step (c),
the strain is released at a rate of 0.1 to 6 mm/s in step (d), and
the wavy metal nanowire network thin film has a thickness of 10 to 500 nm.
2. The method according to claim 1 , wherein the stretchable substrate is transparent.
3. The method according to claim 1 , wherein, in step (b), a metal nanowire network is formed on the substrate by spray coating, spin coating, doctor blade coating or inkjet printing or by transferring an as-prepared nanowire network to the substrate.
4. The method according to claim 1 , wherein the solvent has a surface tension of 20 to 85 J/m 2 .