IP Library › Granted Patent US 10,510,975
Granted Patent B2
US 10,510,975 · App. 15/677,137 · Granted Dec 17, 2019

Light emitting diode and light emitting diode display including the same

Inventors: Dong Chan Kim (Yongin-si, KR); Dong Hoon Kim (Yongin-si, KR); Won Jong Kim (Yongin-si, KR); Ji Young Moon (Yongin-si, KR); Dong Kyu Seo (Yongin-si, KR); Ji Hye Lee (Yongin-si, KR); Da Hea Im (Yongin-si, KR); Sang Hoon Yim (Yongin-si, KR); Yoon Hyeung Cho (Yongin-si, KR); Won Suk Han (Yongin-si, KR)
Assignee: Samsung Display Co., Ltd.
H01L51/5092H01L27/3246H01L51/504H01L51/5072H01L51/5265
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Quick Facts
Patent No.
US 10,510,975
App. No.
15/677,137
Granted
Dec 17, 2019
Kind
B2
Abstract

A light emitting diode and a light emitting diode display, the light emitting diode including a first electrode; a second electrode overlapping the first electrode; an emission layer between the first electrode and the second electrode; and an electron injection layer between the second electrode and the emission layer, wherein the electron injection layer includes a lanthanide element, an alkali meta first element, and a halogen second element, and wherein the first element and the second element are included in the electron injection layer in an amount of 1 vol % to 20 vol %, based on a total volume of a material including the lanthanide element, the first element, and the second element.

Claims (64)

1. A light emitting diode, comprising:

a first electrode;

a second electrode overlapping the first electrode;

an emission layer between the first electrode and the second electrode; and

an electron injection layer between the second electrode and the emission layer,

wherein the electron injection layer includes a lanthanide element, an alkali metal first element, and a halogen second element,

wherein the lanthanide element is ytterbium (Yb), samarium (Sm), or europium (Eu),

wherein the first element is potassium (K), rubidium (Rb), or cesium (Cs),

wherein the second element is chlorine (Cl), bromine (Br), or iodine (I), and

wherein the first element and the second element are included in the electron injection layer in an amount of 1 vol % to 20 vol %, and the lanthanide element is included in the electron injection layer in an amount of 99 vol % to 80 vol %, based on a total volume of a material including the lanthanide element, the first element, and the second element.

2. The light emitting diode as claimed in claim 1 , wherein the electron injection layer includes a dipole material, the dipole material including the lanthanide element and the second element that have different polarities from each other.

3. The light emitting diode as claimed in claim 2 , wherein the dipole material includes a compound including the lanthanide element as a bivalent element or a compound including the lanthanide element as a trivalent element.

4. The light emitting diode as claimed in claim 1 , wherein:

the electron injection layer includes a first compound made of the lanthanide element, the first element, and the second element, and

the first compound has a perovskite structure.

5. The light emitting diode as claimed in claim 1 , wherein the electron injection layer includes a positive ion of the first element.

6. The light emitting diode as claimed in claim 1 , wherein the electron injection layer includes a monomolecular molecule including the lanthanide element.

7. The light emitting diode as claimed in claim 1 , wherein the electron injection layer includes a dipole material having the lanthanide element and the second element with different polarities from each other, a first compound made of the lanthanide element, the first element, and the second element and having a perovskite structure, a positive ion of the first element, or a monomolecular molecule including the lanthanide element.

8. The light emitting diode as claimed in claim 1 , wherein the first element is potassium (K) and the second element is iodine (I).

9. The light emitting diode as claimed in claim 1 , wherein the second electrode includes:

magnesium (Mg) or ytterbium (Yb), and

an alloy of silver (Ag).

10. The light emitting diode as claimed in claim 9 , wherein the magnesium (Mg) or ytterbium (Yb) is included in the second electrode in an amount of 10 vol % to 30 vol %.

11. The light emitting diode as claimed in claim 1 , further comprising an electron transport layer between the emission layer and the electron injection layer, wherein the electron transport layer includes an organic material.

12. The light emitting diode as claimed in claim 1 , wherein:

the emission layer includes a red emission layer, a green emission layer, and a blue emission layer, and

an auxiliary layer is included between the blue emission layer and the first electrode.

13. The light emitting diode as claimed in claim 12 , further comprising:

a red resonance auxiliary layer between the red emission layer and the first electrode; and

a green resonance auxiliary layer between the green emission layer and the first electrode.

14. A light emitting diode, comprising:

a first electrode;

a second electrode overlapping the first electrode;

an emission layer between the first electrode and the second electrode; and

an electron injection layer between the second electrode and the emission layer,

wherein:

the electron injection layer includes a lanthanide element, an alkali metal first element, and a halogen second element,

the lanthanide element is ytterbium (Yb), samarium (Sm), or europium (Eu),

the first element is potassium (K), rubidium (Rb), or cesium (Cs),

the second element is chlorine (Cl), bromine (Br), or iodine (I), and

the lanthanide element is included in the electron injection layer in an amount of 99 vol % to 80 vol %, based on a total volume of a material including the lanthanide element, the first element, and the second element.

15. The light emitting diode as claimed in claim 14 , wherein the electron injection layer includes a compound including the lanthanide element as a bivalent element or a compound including the lanthanide element as a trivalent element.

16. The light emitting diode of claim 15 , wherein the electron injection layer further includes a monomolecular molecule including the lanthanide element.

17. The light emitting diode as claimed in claim 16 , wherein:

the electron injection layer further includes a first compound made of the lanthanide element, the first element, and the second element; and

the first compound has a perovskite structure.

18. A light emitting diode display, comprising:

a substrate;

a thin film transistor on the substrate; and

a light emitting diode connected to the thin film transistor,

wherein:

the light emitting diode includes a first electrode, a second electrode overlapping the first electrode, an emission layer between the first electrode and the second electrode, and an electron injection layer between the second electrode and the emission layer,

the electron injection layer includes a lanthanide element, an alkali metal first element, and a halogen second element,

the lanthanide element is ytterbium (Yb), samarium (Sm), or europium (Eu),

the first element is potassium (K), rubidium (Rb), or cesium (Cs),

the second element is chlorine (Cl), bromine (Br), or iodine (I), and

the first element and the second element are included in the electron injection layer in an amount of 1 vol % to 20 vol %, and the lanthanide element is included in the electron injection layer in an amount of 99 vol % to 80 vol %, based on a total volume of a material including the lanthanide element, the first element, and the second element.

19. The light emitting diode display as claimed in claim 18 , wherein the electron injection layer includes a dipole material having the lanthanide element and the second element that have different polarities from each other.

20. The light emitting diode display as claimed in claim 19 , wherein the dipole material includes a compound including the lanthanide element as a bivalent element or a compound including the lanthanide element as a trivalent element.

21. The light emitting diode display as claimed in claim 18 , wherein:

the electron injection layer includes a first compound made of the lanthanide element, the first element, and the second element; and

the first compound has a perovskite structure.

22. The light emitting diode display as claimed in claim 18 , wherein the emission layer is to emit white light or blue light by combining light from a plurality of layers.

23. The light emitting diode display as claimed in claim 22 , further comprising a color conversion layer on the second electrode and overlying the emission layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 15, 2017
From: KIM, DONG CHAN; KIM, DONG HOON; KIM, WON JONG; MOON, JI YOUNG; SEO, DONG KYU; LEE, JI HYE; IM, DA HEA; YIM, SANG HOON; CHO, YOON HYEUNG; HAN, WON SUK
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 043293/0231 →
Priority Claims (1)
KR 10-2016-0143316 · Oct 31, 2016 · national
Continuity (1)
Related Publication 20180123071A1 · May 3, 2018
Cited By (2)
US 12,635,410 US 12,713,805