Plasma processing apparatus
A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.
1. A plasma processing apparatus comprising:
a processing chamber for processing a sample with a plasma;
a first RF power supply for providing a first RF power to generate the plasma within the processing chamber;
a second RF power supply for providing a second RF power to a sample stage on which the sample is mounted;
a pulse generation unit for creating first pulses for modulating the first RF power and second pulses for modulating the second RF power; and
a controller configured to control the pulse generation unit;
wherein, when the mode of operation of the first RF power supply and the second RF power supply is switched from a pulse modulation mode in which outputs from the first RF power supply and the second RF power supply are pulse-modulated to a continuous output mode in which the first RF power supply and the second RF power supply provide their outputs continuously, said controller is configured to switch the mode of operation of the second RF power supply from the pulse modulation mode to the continuous output mode after a predetermined delay time from switching of the mode of operation of the first RF power supply from the pulse modulation mode to the continuous output mode, and is thereby configured to stabilize a peak to peak voltage of the second RF power supply.
2. A plasma processing apparatus comprising:
a processing chamber for processing a sample with a plasma;
a first RF power supply for providing a first RF power to generate the plasma within the processing chamber;
a second RF power supply for providing a second RF power to a sample stage on which the sample is mounted;
a pulse generation unit for creating first pulses for modulating the first RF power and second pulses for modulating the second RF power; and
a controller configured to control the pulse generation unit;
wherein, when the mode of operation of the first RF power supply and the second RF power supply is switched from a pulse modulation mode in which outputs from the first RF power supply and the second RF power supply are pulse-modulated to a continuous output mode in which the first RF power supply and the second RF power supply provide their outputs continuously, said controller is configured to switch the mode of operation of the second RF power supply from the pulse modulation mode to the continuous output mode after a predetermined delay time from switching of the mode of operation of the first RF power supply from the pulse modulation mode to the continuous output mode, and
the predetermined delay time is a delay time to stabilize a peak to peak voltage of the second RF power supply.