Memory array structure having multiple bit lines
Provided is a memory device including an array of memory cells. A first bit-line coupled to memory cells of a first column of the array of memory cells. The first bit-line is disposed on a first metal layer. A second bit-line is coupled to the first bit-line. The second bit-line is disposed on a second metal layer and coupled to the first bit-line by at least one via. A word line is coupled to a row of the array of memory cells.
1. A memory device comprising:
a cell comprising:
a pass-gate transistor;
a first bit-line connected to a drain node of the pass-gate transistor; and
a second bit-line connected to the first bit-line through a via, wherein one of the first and second bit-lines extends to a control circuitry for the memory device.
2. The memory device of claim 1 , further comprising:
a first word line connected to a gate of the pass-gate transistor;
a second word line connected to the first word line, wherein one of the first and second word lines extends to the control circuitry for the memory device.
3. The memory device of claim 1 , wherein the second bit-line is connected to the first-bit line by the via disposed at a periphery of the cell.
4. The memory device of claim 1 , wherein the second bit-line is connected to the first-bit line by the via disposed outside the periphery of the cell.
5. The memory device of claim 1 , wherein the via extends from a first metal line to a second metal line, the first bit line disposed on the first metal line and the second bit line disposed on the second metal line.
6. The memory device of claim 1 , further comprising:
a second cell comprising:
a second pass-gate transistor;
the first bit-line connected to a drain node of the second pass-gate transistor.
7. The memory device of claim 1 , wherein the cell further comprises a second pass-gate transistor, and a first complementary bit line is connected to a drain node of the second pass-gate transistor.
8. The memory device of claim 7 , further comprising: a second complementary bit line over the first complementary bit line and connected to the first complementary bit line through another via.
9. The memory device of claim 8 , wherein the first complementary bit line and the first bit line are on a first metal layer and wherein the second complementary bit line and the second bit line are on a second metal layer, the via and the another via extending from the first metal layer to the second metal layer.
10. A memory device comprising:
an array of memory cells including
a first cell comprising:
a first pass-gate transistor;
a first bit-line connected to a drain node of the first pass-gate transistor; and
a second bit-line connected to the first bit-line through a via; and
a second cell comprising:
a second pass-gate transistor; and
the first bit line connected to the drain node of the second pass-gate transistor.
11. The memory device of claim 10 , further comprising:
a first word line connected to a gate of the first pass-gate transistor and a gate of the second pass-gate transistor; and
a second word line connected to the first word line through another via.
12. The memory device of claim 10 , wherein the first cell further comprises a third pass-gate transistor.
13. The memory device of claim 12 , wherein a first complementary bit line and a second complementary bit line are connected to the third pass-gate transistor.
14. The memory device of claim 10 , wherein the via extends from an interface with the first bit-line to an interface with the second bit-line.
15. The memory device of claim 10 , wherein the via extends from an interface with the first bit-line to an interposing metal layer, the interposing metal layer disposed between the first bit-line and the second bit-line.
16. A memory device comprising:
a substrate having an array of memory cells;
a first cell comprising:
a first pass-gate transistor;
a first bit-line on a first metallization layer and connected to a drain node of the first pass-gate transistor; and
a second bit-line on a second metallization layer above the first metallization layer, the second bit-line connected to the first-bit line through a via; and
the second bit-line extending to a control circuit disposed on the substrate.
17. The memory device of claim 16 , wherein the first bit-line is copper.
18. The memory device of claim 16 , wherein during a read or write operation to the first cell, the first bit-line and the second bit-line are provided at a same state.
19. The memory device of claim 16 , wherein the second bit-line lies directly over the first bit-line.
20. The memory device of claim 16 , wherein a third metallization layer interposes the first metallization layer and the second metallization layer, each of the first, second and third metallization layers providing a horizontal routing.