Half-bridge power semiconductor module and manufacturing method therefor

1. A half-bridge power semiconductor module comprising:

an insulating substrate including an insulating plate, a plurality of surface wiring conductors arranged on a surface of the insulating plate, and a high-side rear surface wiring conductor and a low-side rear surface wiring conductor arranged on a rear surface of the insulating plate;

a low-side power semiconductor device having a rear electrode thereof ohmically connected onto a second surface-wiring conductor selected from among the plurality of surface wiring conductors;

a high-side power semiconductor device having a rear electrode ohmically connected onto a first surface-wiring conductor selected from among the plurality of surface wiring conductors, and having a surface electrode thereof ohmically connected to the second surface-wiring conductor;

a bridge terminal extending from the first surface-wiring conductor at a position between the high-side power semiconductor device and the low-side power semiconductor device;

a first connection portion which is arranged on an opposite side from the low-side power semiconductor device relative to the high-side power semiconductor device in a plan view of the half-bridge power semiconductor module, and which ohmically connects the first surface-wiring conductor and the high-side rear surface wiring conductor;

a second connection portion which is arranged entirely on an opposite side from the high-side power semiconductor device relative to the low-side power semiconductor device in a plan view of the half-bridge power semiconductor module, and which ohmically connects a surface electrode of the low-side power semiconductor device and the low-side rear surface wiring conductor;

a high-side terminal which extends from the high-side rear surface wiring conductor at a position between the high-side power semiconductor device and the low-side power semiconductor device, and through which current flows from a positive electrode of a power supply; and

a low-side terminal which extends from the low-side rear surface wiring conductor at a position between the high-side power semiconductor device and the low-side power semiconductor device, and through which current flows to a negative electrode of the power supply.

2. The half-bridge power semiconductor module according to claim 1 , wherein

a direction of a main current flowing between the high-side terminal and the bridge terminal via the high-side power semiconductor device and a direction of a main current flowing between the low-side terminal and the bridge terminal via the low-side power semiconductor device are opposite to each other across the insulating plate.

3. The half-bridge power semiconductor module according to claim 1 , wherein

among the main currents flowing via the high-side power semiconductor device, a current gravity center line of a main current flowing on a surface side of the insulating plate coincides with a current gravity center line of a main current flowing on a rear surface side of the insulating plate, when seen from a normal direction of the insulating plate.

4. The half-bridge power semiconductor module according to claim 1 , wherein

among the main currents flowing via the low-side power semiconductor device, a current gravity center line of a main current flowing on a surface side of the insulating plate coincides with a current gravity center line of a main current flowing on a rear surface side of the insulating plate, when seen from a normal direction of the insulating plate.

5. The half-bridge power semiconductor module according to claim 1 , wherein

the high-side power semiconductor device and the low-side power semiconductor device are controlled so as to be exclusively turned on.

6. The half-bridge power semiconductor module according to claim 1 , wherein

any one of the high-side power semiconductor device and the low-side power semiconductor device is a power switching element, and the other one is a power diode.

7. The half-bridge power semiconductor module according to claim 1 , wherein

any one of or both of the high-side power semiconductor device and the low-side power semiconductor device includes or include a pair of a power switching element and high-speed recirculating power diode connected in parallel to each other.

8. The half-bridge power semiconductor module according to claim 7 , wherein

when one of the high-side power semiconductor device and the low-side power semiconductor device is turned off, a direction of a circulating current flowing via the high-speed recirculating power diode of the other one or via a diode built in the power switching element is opposite across the insulating plate.

9. The half-bridge power semiconductor module according to claim 1 , wherein

the insulating substrate further includes:

a second insulating plate arranged on a rear surfaces of the high-side rear surface wiring conductor and the low-side rear surface wiring conductor; and

a metal plate arranged on the rear surface of the second insulating plate.

10. A manufacturing method for a half-bridge power semiconductor module, the module including:

an insulating substrate including an insulating plate, a plurality of surface wiring conductors arranged on a surface of the insulating plate, and a high-side rear surface wiring conductor and a low-side rear surface wiring conductor arranged on a rear surface of the insulating plate;

a low-side power semiconductor device having a rear electrode thereof ohmically connected onto a second surface-wiring conductor selected from among the plurality of surface wiring conductors;

a high-side power semiconductor device having a rear electrode ohmically connected onto a first surface-wiring conductor selected from among the plurality of surface wiring conductors, and having a surface electrode thereof ohmically connected to the second surface-wiring conductor;

a bridge terminal extending from the first surface-wiring conductor at a position between the high-side power semiconductor device and the low-side power semiconductor device;

a first connection portion which is arranged on an opposite side from the low-side power semiconductor device relative to the high-side power semiconductor device in a plan view of the half-bridge power semiconductor module, and which ohmically connects the first surface-wiring conductor and the high-side rear surface wiring conductor;

a second connection portion which is arranged entirely on an opposite side from the high-side power semiconductor device relative to the low-side power semiconductor device in a plan view of the half-bridge power semiconductor module, and which ohmically connects a surface electrode of the low-side power semiconductor device and the low-side rear surface wiring conductor;

a high-side terminal which extends from the high-side rear surface wiring conductor at a position between the high-side power semiconductor device and the low-side power semiconductor device, and through which current flows from a positive electrode of a power supply; and

a low-side terminal which extends from the low-side rear surface wiring conductor at a position between the high-side power semiconductor device and the low-side power semiconductor device, and through which current flows to a negative electrode of the power supply, the method comprising the steps of:

preparing the insulating substrate;

adhering the high-side power semiconductor device and the low-side power semiconductor device onto the first surface-wiring conductor and the second surface-wiring conductor, respectively;

ohmically connecting the surface electrode of the high-side power semiconductor device and the second surface-wiring conductor; and

ohmically connecting the surface electrode of the low-side power semiconductor device and the low-side rear surface wiring conductor.