Photosensitive field-effect transistor
A photosensitive field-effect transistor configured to provide an electrical response when illuminated by electromagnetic radiation incident on the transistor. The photosensitive field-effect transistor comprises a layer of two-dimensional material which forms a horizontal transistor channel configured to transport current, and a horizontal semiconducting layer in contact with the transistor channel. The semiconducting layer comprises two or more assemblies of semiconducting material. If the two-dimensional material in the transistor channel has a high work function, the assemblies of semiconducting material are vertically stacked on the transistor channel in order of decreasing work function. If the two-dimensional material in the transistor channel has a low work function, the assemblies of semiconducting material are vertically stacked on the transistor channel in order of increasing work function. The semiconducting materials may, for example, comprise semiconductor nanocrystals, quantum dots or thin-film semiconducting layers.
1. A photosensitive field-effect transistor configured to provide an electrical response when illuminated by electromagnetic radiation incident on the transistor, wherein the photosensitive field-effect transistor comprises:
at least one electrically conducting source electrode and at least one electrically conducting drain electrode;
a layer of two-dimensional material which forms a horizontal transistor channel configured to transport current between the at least one source electrode and the at least one drain electrode;
at least one electrically conducting gate electrode which overlies or underlies the layer of two-dimensional material; and
a horizontal semiconducting layer in contact with the transistor channel, which can be configured to donate charge carriers to the transistor channel when electromagnetic radiation is absorbed in the semiconducting layer, wherein the semiconducting layer comprises two or more assemblies of semiconducting materials,
wherein the two-dimensional material in the transistor channel has a high work function, and the assemblies of semiconducting material are vertically stacked on the transistor channel in order of decreasing work function.
2. A photosensitive field-effect transistor configured to provide an electrical response when illuminated by electromagnetic radiation incident on the transistor, wherein the photosensitive field-effect transistor comprises:
at least one electrically conducting source electrode and at least one electrically conducting drain electrode;
a layer of two-dimensional material which forms a horizontal transistor channel configured to transport current between the at least one source electrode and the at least one drain electrode;
at least one electrically conducting gate electrode which overlies or underlies the layer of two-dimensional material; and
a horizontal semiconducting layer in contact with the transistor channel, which can be configured to donate charge carriers to the transistor channel when electromagnetic radiation is absorbed in the semiconducting layer, wherein the semiconducting layer comprises two or more assemblies of semiconducting materials,
wherein the two-dimensional material in the transistor channel has a low work function, and the assemblies of semiconducting material are vertically stacked on the transistor channel in order of increasing work function.
3. The photosensitive field-effect transistor according to claim 1 , wherein the assemblies of semiconducting material are vertically stacked on the transistor channel also in order of increasing bandgap.
4. The photosensitive field-effect transistor according to claim 1 , wherein each of the assemblies of semiconducting material comprise semiconductor nanocrystals or colloidal quantum dots.
5. The photosensitive field-effect transistor according to claim 1 , wherein the assembly of semiconducting material which is in contact with the transistor channel comprises a thin-film semiconducting layer, and the additional assemblies of semiconducting material comprise semiconductor nanocrystals or colloidal quantum dots.
6. The photosensitive field-effect transistor according to claim 1 , wherein each of the assemblies of semiconducting material comprises a thin-film semiconducting layer.
7. The photosensitive field-effect transistor according to claim 1 , wherein the semiconducting layer at least partly covers the layer of two-dimensional material, the layer of two-dimensional material covers a first insulating layer, and the first insulating layer covers a first gate electrode.
8. The photosensitive field-effect transistor according to claim 7 , wherein a second gate electrode at least partly covers a second insulating layer, and the second insulating layer at least partly covers the semiconducting layer.
9. The photosensitive field-effect transistor according to claim 7 , wherein a top electrode at least partly covers the semiconducting layer.
10. The photosensitive field-effect transistor according to claim 1 , wherein the layer of two-dimensional material covers the semiconducting layer.
11. The photosensitive field-effect transistor according to claim 10 , wherein the semiconducting layer at least partly covers a bottom electrode.
12. The photosensitive field-effect transistor according to claim 10 , wherein an insulating layer at least partly covers the layer of two-dimensional material, and a gate electrode at least partly covers the insulating layer.
13. The photosensitive field-effect transistor according to claim 10 , wherein the semiconducting layer at least partly covers a bottom electrode, and an insulating layer at least partly covers the layer of two-dimensional material, and a gate electrode at least partly covers the insulating layer.