Composite material, method of manufacturing the same, and application the same
The composite material of the invention includes a plurality of quantum dots and a matrix. The matrix is formed by a plurality of siloxane compounds crosslinked with a component which comprises a plurality of oxime-based silicone primer compounds. The quantum dots are chemically bonded to the matrix through a plurality of amino groups. The quantum dots are uniformly dispersed in the matrix of the composite material.
1. A composite material comprising:
a plurality of quantum dots; and
a matrix formed by a plurality of siloxane compounds crosslinked with a component which comprises a plurality of oxime-based silicone primer compounds, wherein the quantum dots are chemically bonded to the matrix through a plurality of amino groups of the siloxane compounds,
and the quantum dots are uniformly dispersed in the matrix of the composite material.
2. The composite material according to claim 1 , wherein one portion of a surface of one of the quantum dots is covered by the matrix with the amino groups.
3. The composite material according to claim 2 , wherein another portion of the surface of one of the quantum dots is surrounded by the matrix without the amino groups.
4. The composite material according to claim 1 , wherein the quantum dots comprise core structure, core-shell structure, core-multishell structure, core-alloy layer-shell structure, core-alloy layer-multishell structure, core-gradient alloy-shell structure, or a combination thereof.
5. The composite material according to claim 1 , wherein each of the quantum dots comprise a core structure and a shell structure covering the core structure,
the core structure is selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, GaN, GaP, GaAs, InP, InAs, InSb, AlN, AlP, AlAs, AlSb, SiC, Fe, Pt, Ni, Co, Al, Ag, Au, Cu, FePt, Si, Ge, PbS, PbSe, PbTe, and alloys thereof, and
the shell structure is selected from the group consisting of ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe and PbTe, and alloys thereof.
6. The composite material according to claim 1 , wherein the quantum dots are perovskite quantum dots.
7. The composite material according to claim 1 , wherein
the siloxane compounds are represented by formula I:
wherein each R 1 , R 2 , R 3 , R 4 and R 5 is independently selected from the group consisting of C 1-8 alkyl, cycloalkyl, aryl, alkoxy and C 2-8 alkylamine, and at least one of R 1 -R 5 is C 2-8 alkylamine;
m is an integer from 1 to 500; and
n is an integer from 0 to 500.
8. A light emitting diode (LED) device comprising:
a LED chip; and
the composite material according to claim 1 disposed onto the LED chip.
9. A projector color wheel comprising:
a plurality of color-conversion sections; and
the composite material according to claim 1 disposed onto at least one of the color-conversion sections.
10. A method of manufacturing a composite material comprising:
mixing a plurality of quantum dots and a plurality of siloxane compounds to form a first mixture, wherein each of the siloxane compounds has a plurality of amino groups, and the siloxane compounds are chemically bonded to at least one of the quantum dots through the amino groups; and
adding a second component comprising a plurality of oxime-based silicone primer compounds to the first mixture, and then performing a curing step so as to form a matrix of the composite material, wherein the quantum dots are uniformly dispersed in the matrix of the composite material.
11. The method according to claim 10 , wherein a process of the oxime-based silicone primer compounds respectively crosslinked with the siloxane compounds during the curing step comprises a moisture activation step followed by a condensation reaction step.
12. The method according to claim 10 , wherein the first mixture and the second component are substantially solvent-free, and no solvent removal step is required.
13. The method according to claim 10 , wherein the first mixture and the second component are substantially Pt catalyst-free or Rh catalyst-free.
14. The method according to claim 10 , wherein a content of the quantum dots is 0.1-20 wt % and a content of the siloxane compounds is 80-99.9 wt % based on the total weight of the first mixture.
15. The method according to claim 10 , wherein a content of the second component is equal to or more than a content of the first mixture.
16. The method according to claim 10 , wherein a weight ratio of the first mixture to the second component ranges from 1:9 to 1:1.