Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion

1. A method for fabricating an enhancement-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion and gate moat structure, characterized in steps of:

forming an epitaxial structure of N-face AlGaN/GaN, said epitaxial structure of N-face AlGaN/GaN comprising the steps of:

providing a silicon substrate;

depositing a C-doped buffer layer on said silicon substrate;

depositing a C-doped GaN layer on said C-doped buffer layer;

depositing an i-Al y GaN layer on said C-doped GaN layer;

depositing an i-GaN channel layer on said i-Al y GaN layer; and

depositing an i-Al x GaN layer on said i-GaN channel layer;

etching two gate moat structures on both side of a predetermined region for a fluorine-ion structure using dry etching, and implanting fluorine ions into said i-Al x GaN layer using fluorine-ion plasma under a specific electric field (or a specific voltage), and performing a 425° C. thermal treatment for 600 seconds for enabling said fluorine-ion structure to occupy stably a space inside said i-Al x GaN layer; and

fabricating a first gate dielectric layer.

2. The method of claim 1 , wherein said step of fabricating said first gate dielectric layer further comprises steps of:

depositing a dielectric layer for forming said epitaxial structure of N-face AlGaN/GaN;

using a photoresist for defining a region of said first gate dielectric layer by exposure and development;

performing wet etching using buffered oxide etchant for removing said dielectric layer outside the region of said first gate dielectric layer, and reserving only the region for forming said first gate dielectric layer; and

removing the photoresist by using photoresist stripper.

3. A method for fabricating a hybrid enhancement-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion, characterized in steps of:

forming an epitaxial structure of N-face AlGaN/GaN, said epitaxial structure of N-face AlGaN/GaN comprising the steps of:

providing a silicon substrate;

depositing a C-doped buffer layer on said silicon substrate;

depositing a C-doped GaN layer on said C-doped buffer layer;

depositing an i-Al y GaN layer on said C-doped GaN layer;

depositing an i-GaN channel layer on said i-Al y GaN layer; and

depositing an i-Al x GaN layer on said i-GaN channel layer;

etching two gate moat structures on both side of a predetermined region for a fluorine-ion structure using dry etching, and implanting fluorine ions into said i-Al x GaN layer using fluorine-ion plasma under a specific electric field (or a specific voltage), and performing a 425° C. thermal treatment for 600 seconds for enabling said fluorine-ion structure to occupy stably a space inside said i-Al x GaN layer;

fabricating a first gate dielectric layer and a second gate dielectric layer;

dividing said epitaxial structure of N-face AlGaN/GaN into a left region and a right region;

in said left region, forming an enhancement-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion of GaN and gate moat structure and including said fluorine-ion structure for controlling a two-dimensional electron gas below said fluorine-ion structure to be depleted, depositing a passivation dielectric layer with compressive stress (dielectric constant n˜1.45) or with tensile stress (dielectric constant n˜2.0) and with thickness greater than 200 nanometers, inverting said i-AlGaN layer/said i-GaN channel layer/said i-Al y GaN layer in a active region of said epitaxial layer from the N-face polarity to the Ga-face polarity for raising said two-dimensional electron gas from a junction of said i-GaN channel layer/said i-Al y GaN layer to a junction of said i-GaN channel layer/said i-Al x GaN layer; and

in said right region, forming a depletion-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion of GaN and gate dielectric layer, using a stress of said passivation dielectric layer to invert said i-Al x GaN layer/said i-GaN channel layer/said i-Al y GaN layer in the active region of said epitaxial structure and raise said two-dimensional electron gas from the junction of said i-GaN channel layer/said i-Al y GaN layer to the junction of said i-GaN channel layer/said i-Al x GaN layer, and including said second gate dielectric layer.

4. The method for fabricating a hybrid enhancement-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion of claim 3 , characterized in steps of:

using a metal vapor deposition and metal lift-off methods to form a first source electrode and a first drain electrode in said left region and a second source electrode and a second drain electrode in said right region; and

performing a 700˜900° C. thermal treatment for 30 seconds for enabling said first source electrode, said first drain electrode, said second source electrode, and said second drain electrode to become ohmic-contact electrodes.

5. The method for fabricating a hybrid enhancement-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion of claim 4 , characterized in a step of using the metal vapor deposition and metal lift-off methods to form a first gate electrode, a first source metal interconnect, a first drain metal interconnect, a second source metal interconnect, a second drain metal interconnect, and a second gate electrode; where said first gate electrode is located on said first gate dielectric layer; said first source metal interconnect is located on said first source electrode; said second gate electrode is located on said second gate dielectric layer; and said second drain metal interconnect is located on said second drain electrode.

6. A method for fabricating a hybrid N-face AlGaN/GaN Schottky barrier diode with polarity inversion, characterized in steps of:

forming an epitaxial structure of N-face AlGaN/GaN, said epitaxial structure of N-face AlGaN/GaN comprising the step of:

providing a silicon substrate;

depositing a C-doped buffer layer on said silicon substrate;

depositing a C-doped GaN layer on said C-doped buffer layer;

depositing an i-Al y GaN layer on said C-doped GaN layer;

depositing an i-GaN channel layer on said i-Al y GaN layer; and

depositing an i-Al x GaN layer on said i-GaN channel layer;

etching two gate moat structures on both side of the predetermined region for a fluorine-ion structure using dry etching, and implanting fluorine ions into said i-Al x GaN layer (x=0.1˜0.3) using fluorine-ion plasma under a specific electric field (or a specific voltage), and performing a 425° C. thermal treatment for 600 seconds for enabling said fluorine-ion structure to occupy stably a space inside said i-Al x GaN layer;

fabricating a first gate dielectric layer and an anode field-plate dielectric layer;

dividing said epitaxial structure of N-face AlGaN/GaN into a left region and a right region;

in said left region, forming an enhancement-mode N-face AlGaN/GaN high electron mobility transistor with polarity inversion of GaN and gate moat structure and including said fluorine-ion structure for controlling a two-dimensional electron gas below said fluorine-ion structure to be depleted, depositing a passivation dielectric layer with compressive stress (dielectric constant n˜1.45) or with tensile stress (dielectric constant n˜2.0) and with thickness greater than 200 nanometers, inverting said i-Al x GaN layer/said i-GaN channel layer/said i-Al y GaN layer in a active region of said epitaxial layer from the N-face polarity to the Ga-face polarity for raising said two-dimensional electron gas from a junction of said i-GaN channel layer/said i-Al y GaN layer to a junction of said i-GaN channel layer/said i-Al x GaN layer; and

in said right region, forming an N-face AlGaN/GaN Schottky barrier diode with polarity inversion and having said anode field-plate dielectric layer, and using a stress of said passivation dielectric layer to invert said i-Al x GaN layer/said i-GaN channel layer/said i-Al y GaN layer in the active region of said epitaxial structure and raise said two-dimensional electron gas from the junction of said i-GaN channel layer/said i-Al y GaN layer to the junction of said i-GaN channel layer/said i-Al x GaN layer.

7. The method for fabricating a hybrid N-face AlGaN/GaN Schottky barrier diode with polarity inversion of claim 6 , characterized in steps of:

using a metal vapor deposition and metal lift-off methods to form a first source electrode and a first drain electrode in said left region and a cathode electrode in said right region; and

performing a 700˜900° C. thermal treatment for 30 seconds for enabling said first source electrode, said first drain electrode, and said cathode electrode to become ohmic-contact electrodes.

8. The method for fabricating a hybrid N-face AlGaN/GaN Schottky barrier diode with polarity inversion of claim 7 , characterized in a step of using the metal vapor deposition and metal lift-off methods to form a first gate electrode, a first source metal interconnect, a first drain metal interconnect, a cathode metal interconnect, and an anode metal interconnect; where said first gate electrode is located on said first gate dielectric layer; said first source metal interconnect is located on said first source electrode; and said anode metal interconnect is formed on said anode field-plate dielectric layer.